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    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
    2.
    发明申请
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效
    使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性

    公开(公告)号：US20060222112A1

    公开(公告)日：2006-10-05

    申请号：US11096636

    申请日：2005-03-31

    申请人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    发明人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    IPC分类号： H04L27/06

    CPC分类号： B82Y25/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.

    摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
    3.
    发明申请
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 有权
    采用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁性钉扎层中的单轴磁各向异性

    公开(公告)号：US20060221514A1

    公开(公告)日：2006-10-05

    申请号：US11097920

    申请日：2005-03-31

    申请人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    发明人： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/308 ,  H01L43/08

    摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.

    摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
    7.
    发明申请
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer 失效
    使用倾斜蚀刻底层的磁性读取传感器，用于在自偏压自由层中诱导单轴磁各向异性

    公开(公告)号：US20060221515A1

    公开(公告)日：2006-10-05

    申请号：US11177990

    申请日：2005-07-07

    申请人： Matthew Carey ,  Jeffrey Childress ,  James Nix ,  Stefan Maat ,  Ian McFadyen

    发明人： Matthew Carey ,  Jeffrey Childress ,  James Nix ,  Stefan Maat ,  Ian McFadyen

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

    摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。

    CPP SPIN VALVE WITH LONG SPIN DIFFUSION LENGTH AP1 LAYERS
    8.
    发明申请
    CPP SPIN VALVE WITH LONG SPIN DIFFUSION LENGTH AP1 LAYERS 有权
    CPP旋转阀具有长的旋转扩张长度AP1层

    公开(公告)号：US20080074807A1

    公开(公告)日：2008-03-27

    申请号：US11944082

    申请日：2007-11-21

    申请人： Matthew Carey ,  Shekar Chandrashekariaih ,  Stefan Maat ,  Jeffrey Childress

    发明人： Matthew Carey ,  Shekar Chandrashekariaih ,  Stefan Maat ,  Jeffrey Childress

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272

    摘要： A magnetoresistive sensor having a pinned layer that includes a first magnetic layer (AP1) a second magnetic layer (AP2) and an antiparallel coupling layer sandwiched between the AP1 and AP2 layers. The AP1 layer is adjacent to a layer of antiferromagnetic material (AFM layer) and is constructed so as to have a long spin diffusion length. The long spin diffusion length of the AP1 layer minimizes the negative GMR contribution of the AP1 layer, thereby increasing the overall GMR effect of the sensor.

    摘要翻译： 一种具有固定层的磁阻传感器，其包括夹在AP1和AP2层之间的第一磁性层（AP1），第二磁性层（AP2）和反平行耦合层。 AP1层与反铁磁材料层（AFM层）相邻，并被构造成具有长的自旋扩散长度。 AP1层的长自旋扩散长度使AP1层的负GMR贡献最小化，从而增加了传感器的总体GMR效应。

    CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE
    9.
    发明申请
    CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE 失效
    具有无阻抗层结构和低电流感应噪声的电流 - 平面（CPP）磁传感器

    公开(公告)号：US20070253119A1

    公开(公告)日：2007-11-01

    申请号：US11380625

    申请日：2006-04-27

    申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  Neil Smith

    发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  Neil Smith

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B2005/3996

    摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thicknesses of FL1 and FL2 are chosen to obtain the desired net free layer magnetic moment/area for the sensor, and the thickness of FL1 is preferably chosen to be greater than the spin-diffusion length of the electrons in the FL1 material to maximize the bulk spin-dependent scattering of electrons and thus maximize the sensor signal. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.

    摘要翻译： 电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。 （APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上 反平行磁化方向，并且在存在磁场的情况下一起旋转。 选择FL1和FL2的厚度以获得用于传感器的期望的净自由层磁矩/面积，并且FL1的厚度优选地选择为大于FL1材料中的电子的自旋扩散长度以使 电子的体自旋依赖散射，从而使传感器信号最大化。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

    Magnetic head with improved CPP sensor using Heusler alloys
    10.
    发明申请
    Magnetic head with improved CPP sensor using Heusler alloys 有权
    磁头与改进的CPP传感器使用Heusler合金

    公开(公告)号：US20070109693A1

    公开(公告)日：2007-05-17

    申请号：US11281054

    申请日：2005-11-16

    申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

    发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3263 ,  H01L43/10

    摘要： A magnetic head including a CPP GMR read sensor that includes a reference layer, a free magnetic layer and a spacer layer that is disposed between them, where the free magnetic layer and the reference magnetic layer are each comprised of Co2MnX where X is a material selected from the group consisting of Ge, Si, Al, Ga and Sn, and where the spacer layer is comprised of a material selected from the group consisting of Ni3Sn, Ni3Sb, Ni2LiGe, Ni2LiSi, Ni2CuSn, Ni2CuSb, Cu2NiSn, Cu2NiSb, Cu2LiGe and Ag2LiSn. Further embodiments include a dual spin valve sensor where the free magnetic layers and the reference layers are each comprised of Heusler alloys. A further illustrative embodiment includes a laminated magnetic layer structure where the magnetic layers are each comprised of a ferromagnetic Heusler alloy, and where the spacer layers are comprised of a nonmagnetic Heusler alloy.

    摘要翻译： 包括CPP GMR读取传感器的磁头包括参考层，自由磁性层和设置在它们之间的间隔层，其中自由磁性层和参考磁性层各自包含Co 2， SUB> MnX，其中X是选自Ge，Si，Al，Ga和Sn的材料，并且其中间隔层由选自Ni 3 Sn的材料构成 ，Ni 3 Sb，Ni 2 LiGe，Ni 2 LiSi，Ni 2 CuSn，Ni 2 CuSb，Cu 2 NiSn，Cu 2 NiSb，Cu 2 LiGe和Ag 2 LiSn。 另外的实施例包括双自旋阀传感器，其中自由磁性层和参考层各自由Heusler合金构成。 另外的说明性实施例包括层叠磁性层结构，其中磁性层各自包含铁磁Heusler合金，并且其中间隔层由非磁性Heusler合金构成。