-
公开(公告)号：US07981755B2
公开(公告)日：2011-07-19
申请号：US11924073
申请日：2007-10-25
IPC分类号： H01L21/331 , H01L21/44
CPC分类号： H01L21/76843 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/148 , H01L45/16 , H01L45/1675 , H01L45/1683
摘要： The present invention in one embodiment provides a method of manufacturing an electrode that includes providing at least one metal stud positioned in a via extending into a first dielectric layer, wherein an electrically conductive liner is positioned between at least a sidewall of the via and the at least one metal stud; recessing an upper surface of the at least one metal stud below an upper surface of the first dielectric layer to provide at least one recessed metal stud; and forming a second dielectric atop the at least one recessed metal stud, wherein an upper surface of the electrically conductive liner is exposed.
摘要翻译： 本发明在一个实施例中提供了一种制造电极的方法，其包括提供定位在延伸到第一介电层中的通孔中的至少一个金属柱，其中导电衬垫定位在通孔的至少侧壁和在 最少一个金属螺柱; 将所述至少一个金属螺柱的上表面凹陷在所述第一介电层的上表面下方，以提供至少一个凹入的金属柱; 以及在所述至少一个凹入的金属螺柱的顶部上形成第二电介质，其中所述导电衬垫的上表面被暴露。
-
公开(公告)号：US20100297848A1
公开(公告)日：2010-11-25
申请号：US12468297
申请日：2009-05-19
IPC分类号： H01L21/306
CPC分类号： H01L21/32136 , H01L21/76834 , H01L21/76883 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/1683
摘要： The present invention in one embodiment provides an etch method that includes providing a structure including a tungsten (W) portion and a titanium nitride (TiN) portion; applying a first etch feed gas of sulfur hexafluoride (SF6) and oxygen (O2), in which the ratio of sulfur hexafluoride (SF6) to oxygen (O2) ranges from 1:3.5 to 1:4.5; and applying a second etch feed gas of nitrogen trifluoride (NF3), helium (He) and chlorine (Cl2), in which the ratio of nitrogen trifluoride (NF3) to chlorine (Cl2) ranges from 1:5 to 2:5 and the ratio of helium (He) to nitrogen trifluoride (NF3) and chlorine (Cl2) ranges from 1:3 to 1:1.
摘要翻译： 本发明在一个实施例中提供了一种蚀刻方法，其包括提供包括钨（W）部分和氮化钛（TiN）部分的结构; 施加六氟化硫（SF 6）和氧（O 2）的第一蚀刻进料气体，其中六氟化硫（SF 6）与氧气（O 2）的比率为1:3.5至1:4.5; 并施加三氟化氮（NF3）与氯（Cl2）的比率为1:5〜2:5的三氟化氮（NF3），氦（He）和氯（Cl2）的第二蚀刻进料气体， 氦（He）与三氟化氮（NF 3）和氯（Cl 2）的比例为1:3-1:1。
-
公开(公告)号：US07972966B2
公开(公告)日：2011-07-05
申请号：US12468297
申请日：2009-05-19
IPC分类号： H01L21/311
CPC分类号： H01L21/32136 , H01L21/76834 , H01L21/76883 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/1683
摘要： The present invention in one embodiment provides an etch method that includes providing a structure including a tungsten (W) portion and a titanium nitride (TiN) portion; applying a first etch feed gas of sulfur hexafluoride (SF6) and oxygen (O2), in which the ratio of sulfur hexafluoride (SF6) to oxygen (O2) ranges from 1:3.5 to 1:4.5; and applying a second etch feed gas of nitrogen trifluoride (NF3), helium (He) and chlorine (Cl2), in which the ratio of nitrogen trifluoride (NF3) to chlorine (Cl2) ranges from 1:5 to 2:5 and the ratio of helium (He) to nitrogen trifluoride (NF3) and chlorine (Cl2) ranges from 1:3 to 1:1.
摘要翻译： 本发明在一个实施例中提供了一种蚀刻方法，其包括提供包括钨（W）部分和氮化钛（TiN）部分的结构; 施加六氟化硫（SF 6）和氧（O 2）的第一蚀刻进料气体，其中六氟化硫（SF 6）与氧气（O 2）的比率为1:3.5至1:4.5; 并施加三氟化氮（NF3）与氯（Cl2）的比率为1:5〜2:5的三氟化氮（NF3），氦（He）和氯（Cl2）的第二蚀刻进料气体， 氦（He）与三氟化氮（NF 3）和氯（Cl 2）的比例为1:3-1:1。
-
公开(公告)号：US20090111228A1
公开(公告)日：2009-04-30
申请号：US11924073
申请日：2007-10-25
IPC分类号： H01L21/33
CPC分类号： H01L21/76843 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/148 , H01L45/16 , H01L45/1675 , H01L45/1683
摘要： The present invention in one embodiment provides a method of manufacturing an electrode that includes providing at least one metal stud positioned in a via extending into a first dielectric layer, wherein an electrically conductive liner is positioned between at least a sidewall of the via and the at least one metal stud; recessing an upper surface of the at least one metal stud below an upper surface of the first dielectric layer to provide at least one recessed metal stud; and forming a second dielectric atop the at least one recessed metal stud, wherein an upper surface of the electrically conductive liner is exposed.
摘要翻译： 本发明在一个实施例中提供了一种制造电极的方法，其包括提供定位在延伸到第一介电层中的通孔中的至少一个金属柱，其中导电衬垫定位在通孔的至少侧壁和在 最少一个金属螺柱; 将所述至少一个金属螺柱的上表面凹陷在所述第一介电层的上表面下方，以提供至少一个凹入的金属柱; 以及在所述至少一个凹入的金属螺柱的顶部上形成第二电介质，其中所述导电衬垫的上表面被暴露。
-
公开(公告)号：US20130001500A1
公开(公告)日：2013-01-03
申请号：US13612552
申请日：2012-09-12
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/165 , H01L45/1666
摘要： A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating material is coplanar with an upper surface of the pillar; recessing the upper surface of the pillar below the upper surface of the insulating material to provide a recessed cavity; and forming a second phase change material atop the recessed cavity and the upper surface of the insulating material, wherein the second phase change material has a greater phase resistivity than the first phase change material.
-
公开(公告)号：US20110001111A1
公开(公告)日：2011-01-06
申请号：US12497596
申请日：2009-07-03
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Blpin Rajendran , Alejandro G. Schrott , Yu Zhu
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Blpin Rajendran , Alejandro G. Schrott , Yu Zhu
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom electrode. The method includes depositing a thermally insulating layer along at least one sidewall of the pore. The thermally insulating layer isolates heat from phase change current to the volume of the pore. In one embodiment phase change material is deposited within the pore and the volume of the thermally insulating layer. In another embodiment a pore electrode is formed within the pore and the volume of the thermally insulating layer, with the phase change material being deposited above the pore electrode. The method also includes forming an electrically conducting top electrode above the phase change material.
摘要翻译： 一种存储单元结构及其形成方法。 该方法包括在电介质层内形成孔。 孔形成在导电底部电极的中心上方。 该方法包括沿孔的至少一个侧壁沉积绝热层。 绝热层将热量从相变电流隔离成孔的体积。 在一个实施例中，相变材料沉积在孔隙和隔热层的体积内。 在另一个实施方案中，孔隙电极形成在绝热层的孔隙和体积内，相变材料沉积在孔电极上方。 该方法还包括在相变材料上形成导电顶电极。
-
公开(公告)号：US07851323B2
公开(公告)日：2010-12-14
申请号：US12500659
申请日：2009-07-10
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
CPC分类号： H01L45/141 , G11C13/0004 , G11C13/0007 , G11C2213/52 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145
摘要： The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
摘要翻译： 本发明在一个实施例中提供了一种包括相变存储单元的存储器件; 第一电极; 以及位于所述相变存储器单元和所述第一电极之间的丝状电阻材料层，其中在所述丝状电阻器材料层的至少一部分中存在至少一个双稳态导电丝状通道，其提供所述相变存储器 电池和第一电极。
-
公开(公告)号：US20090275168A1
公开(公告)日：2009-11-05
申请号：US12500659
申请日：2009-07-10
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
CPC分类号： H01L45/141 , G11C13/0004 , G11C13/0007 , G11C2213/52 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145
摘要： The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
摘要翻译： 本发明在一个实施例中提供了一种包括相变存储单元的存储器件; 第一电极; 以及位于所述相变存储器单元和所述第一电极之间的丝状电阻材料层，其中在所述丝状电阻器材料层的至少一部分中存在至少一个双稳态导电丝状通道，其提供所述相变存储器 电池和第一电极。
-
公开(公告)号：US08686391B2
公开(公告)日：2014-04-01
申请号：US13612552
申请日：2012-09-12
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/165 , H01L45/1666
摘要： A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating material is coplanar with an upper surface of the pillar; recessing the upper surface of the pillar below the upper surface of the insulating material to provide a recessed cavity; and forming a second phase change material atop the recessed cavity and the upper surface of the insulating material, wherein the second phase change material has a greater phase resistivity than the first phase change material.
摘要翻译： 提供一种制造电极的方法，其包括在电介质层的导电结构的顶部设置第一相变材料的柱; 或倒置结构; 在电介质层的上方形成绝缘材料，并邻近所述柱，其中所述第一绝缘材料的上表面与所述柱的上表面共面; 将所述柱的上表面凹陷在所述绝缘材料的上表面下方以提供凹腔; 以及在所述凹腔和所述绝缘材料的上表面之上形成第二相变材料，其中所述第二相变材料具有比所述第一相变材料更大的相电阻率。
-
公开(公告)号：US20120129313A1
公开(公告)日：2012-05-24
申请号：US13363549
申请日：2012-02-01
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Bipin Rajendran , Alejandro G. Schrott , Yu Zhu
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Bipin Rajendran , Alejandro G. Schrott , Yu Zhu
IPC分类号： H01L21/62
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom electrode. The method includes depositing a thermally insulating layer along at least one sidewall of the pore. The thermally insulating layer isolates heat from phase change current to the volume of the pore. In one embodiment phase change material is deposited within the pore and the volume of the thermally insulating layer. In another embodiment a pore electrode is formed within the pore and the volume of the thermally insulating layer, with the phase change material being deposited above the pore electrode. The method also includes forming an electrically conducting top electrode above the phase change material.
摘要翻译： 一种存储单元结构及其形成方法。 该方法包括在电介质层内形成孔。 孔形成在导电底部电极的中心上方。 该方法包括沿孔的至少一个侧壁沉积绝热层。 绝热层将热量从相变电流隔离成孔的体积。 在一个实施例中，相变材料沉积在孔隙和隔热层的体积内。 在另一个实施方案中，孔隙电极形成在绝热层的孔隙和体积内，相变材料沉积在孔电极上方。 该方法还包括在相变材料上形成导电顶电极。
-
-
-
-
-
-
-
-
-
搜索结果
76 条记录 (耗时 0.033 秒)