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22 条记录 (耗时 0.018 秒)

    Taping knife handle with identification insert
    1.
    发明申请
    Taping knife handle with identification insert 审中-公开
    带识别插件的编带刀柄

    公开(公告)号：US20070074401A1

    公开(公告)日：2007-04-05

    申请号：US11328530

    申请日：2006-01-10

    申请人： Matthew Myers ,  Scott Fong

    发明人： Matthew Myers ,  Scott Fong

    IPC分类号： B26B3/00 ,  B26B11/00

    CPC分类号： B25G1/00 ,  E04F21/165 ,  E04F21/1652

    摘要： A handle for a taping knife having a blade with a working edge and an attachment edge opposite the working edge, the handle including a handle core with distal and proximal ends, the proximal end associated with the attachment edge, the core defining a recess, and at least one identification insert insertable into the handle core recess.

    摘要翻译： 一种用于具有工作边缘的叶片和与工作边缘相对的附接边缘的带状刀的手柄，所述手柄包括具有远端和近端的手柄芯，所述近端与附接边缘相关联，所述芯限定凹陷， 至少一个识别插入件可插入到把手芯部凹槽中。

    Taping knife with enlarged hammer element
    2.
    发明申请
    Taping knife with enlarged hammer element 有权
    带增大锤头元素的编带刀

    公开(公告)号：US20070017101A1

    公开(公告)日：2007-01-25

    申请号：US11187582

    申请日：2005-07-22

    申请人： Ricardo Perez ,  Jason Lind ,  Matthew Myers ,  Scott Fong

    发明人： Ricardo Perez ,  Jason Lind ,  Matthew Myers ,  Scott Fong

    IPC分类号： B26B3/00

    CPC分类号： E04F21/06 ,  Y10S16/902 ,  Y10T16/476 ,  Y10T16/48

    摘要： A tool includes a blade having a working edge and an attachment edge opposite the working edge, a handle with distal and proximal ends and a body having at least one diameter. The proximal end is associated with the attachment edge. A hammer element is associated with the distal end, and a periphery of the hammer element extends in a radial direction greater than the at least one diameter of the body.

    摘要翻译： 工具包括具有加工边缘和与工作边缘相对的附接边缘的刀片，具有远端和近端的手柄以及具有至少一个直径的主体。 近端与附接边缘相关联。 锤元件与远端相关联，并且锤元件的周边沿径向方向延伸大于身体的至少一个直径。

    High power diode utilizing secondary emission
    6.
    发明申请
    High power diode utilizing secondary emission 有权
    利用二次发射的大功率二极管

    公开(公告)号：US20050199982A1

    公开(公告)日：2005-09-15

    申请号：US11014458

    申请日：2004-12-17

    申请人： Moshe Friedman ,  Matthew Myers ,  Frank Hegeler ,  John Sethian

    发明人： Moshe Friedman ,  Matthew Myers ,  Frank Hegeler ,  John Sethian

    IPC分类号： H01L21/00 ,  H01L29/861

    CPC分类号： H01J21/20 ,  H01S3/0382 ,  H01S3/0384 ,  H01S3/0388 ,  H01S3/09707 ,  H01S3/225 ,  H01S3/2256

    摘要： A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary electron discharge. The diode can operate at voltages 50 kV and higher while generating an electron beam with a uniform current density in the range from 1 A/cm2 to >10 kA/cm2 throughout the area of the cathode. It is capable of repetitively pulsed operation at a few Hz with pulse duration from a few nanoseconds to more than a microseconds, while the total number of pulses can be >107 pulses. The diode generates minimal out-gassing or debris, i.e. with minimal ablation, providing a greater diode lifetime, and can operate in a high vacuum environment of 10−4 Torr. The high power diode is useful in many applications requiring a high current electron beam. Exemplary applications include x-ray photography of large samples, polymerization processes, sterilization of biological and chemical agents, irradiation of food, and as a pump for lasers, e.g. excimer lasers such as krypton fluorine (KrF) lasers.

    摘要翻译： 高功率二极管包括用于发射一次电子放电的阴极，阳极和多孔电介质层，例如， 位于阴极和阳极之间的用于接收初级电子放电并发射二次电子放电的蜂窝陶瓷。 二极管可以在50kV及更高的电压下工作，同时产生电流密度在1A / cm 2至> 10kA / cm 2范围内的均匀电流密度的电子束。 在阴极的整个区域。 它能够以几赫兹重复地脉冲操作，脉冲持续时间从几纳秒到超过一微秒，而总脉冲数可以> 10个以上。 二极管产生最小的排气或碎屑，即最小消融，提供更大的二极管寿命，并且可以在10-4乇的高真空环境中工作。 高功率二极管在需要高电流电子束的许多应用中是有用的。 示例性应用包括大样品的X射线摄影，聚合过程，生物和化学试剂的灭菌，食物的照射，以及用于激光的泵。 准分子激光器如氪氟（KrF）激光器。

    High power diode utilizing secondary emission
    9.
    发明授权
    High power diode utilizing secondary emission 有权
    利用二次发射的大功率二极管

    公开(公告)号：US07429761B2

    公开(公告)日：2008-09-30

    申请号：US11014458

    申请日：2004-12-17

    申请人： Moshe Friedman ,  Matthew Myers ,  Frank Hegeler ,  John Sethian

    发明人： Moshe Friedman ,  Matthew Myers ,  Frank Hegeler ,  John Sethian

    IPC分类号： H01L29/74

    CPC分类号： H01J21/20 ,  H01S3/0382 ,  H01S3/0384 ,  H01S3/0388 ,  H01S3/09707 ,  H01S3/225 ,  H01S3/2256

    摘要： A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary electron discharge. The diode can operate at voltages 50 kV and higher while generating an electron beam with a uniform current density in the range from 1 A/cm2 to >10 kA/cm2 throughout the area of the cathode. It is capable of repetitively pulsed operation at a few Hz with pulse duration from a few nanoseconds to more than a microseconds, while the total number of pulses can be >107 pulses. The diode generates minimal out-gassing or debris, i.e. with minimal ablation, providing a greater diode lifetime, and can operate in a high vacuum environment of 10−4 Torr. The high power diode is useful in many applications requiring a high current electron beam. Exemplary applications include x-ray photography of large samples, polymerization processes, sterilization of biological and chemical agents, irradiation of food, and as a pump for lasers, e.g. excimer lasers such as krypton fluorine (KrF) lasers.

    摘要翻译： 高功率二极管包括用于发射一次电子放电的阴极，阳极和多孔电介质层，例如， 位于阴极和阳极之间的用于接收初级电子放电并发射二次电子放电的蜂窝陶瓷。 二极管可以在50kV及更高的电压下工作，同时产生电流密度在1A / cm 2至> 10kA / cm 2范围内的均匀电流密度的电子束。 在阴极的整个区域。 它能够以几赫兹重复地脉冲操作，脉冲持续时间从几纳秒到超过一微秒，而总脉冲数可以> 10个以上。 二极管产生最小的排气或碎屑，即最小消融，提供更大的二极管寿命，并且可以在10-4乇的高真空环境中工作。 高功率二极管在需要高电流电子束的许多应用中是有用的。 示例性应用包括大样品的X射线摄影，聚合过程，生物和化学试剂的灭菌，食物的照射，以及用于激光的泵。 准分子激光器如氪氟（KrF）激光器。

    Thin Film Devices Utilizing Hexabenzocoronenes
    10.
    发明申请
    Thin Film Devices Utilizing Hexabenzocoronenes 审中-公开
    利用六苯并三烯的薄膜器件

    公开(公告)号：US20070292601A1

    公开(公告)日：2007-12-20

    申请号：US11566437

    申请日：2006-12-04

    申请人： Colin Nuckolls ,  Xuefeng Guo ,  Philip Kim ,  Shengxiong Xiao ,  Matthew Myers

    发明人： Colin Nuckolls ,  Xuefeng Guo ,  Philip Kim ,  Shengxiong Xiao ,  Matthew Myers

    IPC分类号： B05D5/12 ,  C07C15/20 ,  C07C43/20 ,  C07C53/44

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C15/20 ,  C07C43/2055 ,  C07C43/215 ,  C07C2603/54 ,  H01L51/0049 ,  H01L51/0056 ,  H01L51/05 ,  H01L51/0595

    摘要： The present invention generally relates to the fabrication of molecular electronics devices from molecular wires and Single Wall Nanotubes (SWNT). In one embodiment, the cutting of a SWNT is achieved by opening a window of small width by lithography patterning of a protective layer on top of the SWNT, followed by applying an oxygen plasma to the exposed SWNT portion. In another embodiment, the gap of a cut SWNT is reconnected by one or more difunctional molecules having appropriate lengths reacting to the functional groups on the cut SWNT ends to form covalent bonds. In another embodiment, the gap of a cut SWNT gap is filled with a self-assembled monolayer from derivatives of novel contorted hexabenzocoranenes. In yet another embodiment, a device based on molecular wire reconnected a cut SWNT is used as a sensor to detect a biological binding event.

    摘要翻译： 本发明一般涉及从分子线和单壁纳米管（SWNT）制造分子电子器件。 在一个实施例中，通过在SWNT顶部上的保护层的光刻图案化，然后将氧等离子体施加到暴露的SWNT部分，打开小宽度的窗口来实现SWNT的切割。 在另一个实施方案中，切割的SWNT的间隙通过一个或多个具有与切割的SWNT末端上的官能团反应形成共价键的适当长度的双功能分子重新连接。 在另一个实施方案中，切割的SWNT间隙的间隙填充有自组装单层，由新颖扭转的六苯并三硼酸衍生物填充。 在另一个实施方案中，基于重新连接切割SWNT的分子线的装置用作传感器以检测生物结合事件。