摘要:
A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.
摘要:
A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.
摘要:
A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.
摘要:
A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.
摘要:
An electrostatic discharge (ESD) protection device for protecting an I/O port of an electronic circuit from overvoltage and a coil structure for use in an ESD protection device. The ESD protection device includes: a plurality of inductors that are serially coupled in a line, where a node is formed between two neighboring inductors; and a plurality of protection arrangements adapted to conduct charges to one provided potential when an overvoltage is applied, where each of the protection arrangements is connected with one of the nodes, and where the serially coupled inductors are magnetically coupled with each other.
摘要:
A continuously tunable inductor with an inductive-capacitive (LC) voltage controlled oscillator (VCO) having a primary coil. The inductor includes a separate isolated secondary coil, a set of transistors composing a closed loop with the secondary coil, a magnetic coupling between the primary coil of the LC VCO and the secondary coil, an electrical coupling between the LC VCO and the set of transistors composing a closed loop with the secondary coil, and means for electric current injection into the closed loop. Such an inductor can be tuned by modulating a mutual inductance, which is magnetically and electrically coupled with the LC VCO by injection of an electric current (I0).
摘要:
The invention is directed to a device (10, 10a-10d) comprising: a set of on-chip circuits (110-160, 170, 180), each of the circuits configured to generate a magnetic field (300) perpendicular to a planar surface of the set when energized; a ferrofluidic layer (40) interfaced to the planar surface; and a logic circuit (50) configured to selectively energize (200, 200a) one ore more circuits of the set such as to generate a magnetic field at the energized circuits and a deformation (41, 44, 45) of the ferrofluidic layer in response thereto and to modulate optical beams (IR1, IR2) directed to the ferrofluid layer. Preferably, an additional liquid layer (60) is interfaced to the ferrofluid layer, opposite to the on-chip circuits, which is not miscible with the ferrofluid layer. The invention can be applied to micro-display/projection devices, programmable optical reflecting lenses, or to micro-molding applications for surface replication.
摘要:
The invention is directed to a device (10, 10a-10d) comprising: a set of on-chip circuits (110-160, 170, 180), each of the circuits configured to generate a magnetic field (300) perpendicular to a planar surface of the set when energized; a ferrofluidic layer (40) interfaced to the planar surface; and a logic circuit (50) configured to selectively energize (200, 200a) one ore more circuits of the set such as to generate a magnetic field at the energized circuits and a deformation (41, 44, 45) of the ferrofluidic layer in response thereto and to modulate optical beams (IR1, IR2) directed to the ferrofluid layer. Preferably, an additional liquid layer (60) is interfaced to the ferrofluid layer, opposite to the on-chip circuits, which is not miscible with the ferrofluid layer. The invention can be applied to micro-display/projection devices, programmable optical reflecting lenses, or to micro-molding applications for surface replication.
摘要:
A method and apparatus for varactor bank switching for a voltage controlled oscillator is disclosed. Varactor bank switching involves generating a negative bias voltage signal as a control signal for a varactor bank switch in an off-state, the varactor bank switch comprising a pass-gate circuit including switching transistors. Generating the negative bias voltage signal includes employing an active rectifier circuit running at the speed of an oscillation signal, the negative bias voltage signal maintaining the gate-source voltage of the pass-gate circuit below a threshold voltage to prevent said switching transistors from becoming conductive in an off-state.
摘要:
An inductor including a primary coil coaxially arranged and operated in parallel with isolated secondary coils each including at least one loop winding with two open-circuited ports. At least one phase shifting device is arranged between open-circuited ports of at least one secondary coil. A method to operate an inductor by combining primary and secondary coils with phase shifting devices to get a wide tuning range is also provided. The method includes the step of phase shifting open-circuited ports of at least one secondary coil.