-
公开(公告)号：US07880207B2
公开(公告)日：2011-02-01
申请号：US12350991
申请日：2009-01-09
IPC分类号： H01L31/113
CPC分类号： H01L27/14692 , H01L27/1462
摘要： A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.
摘要翻译： 一种光检测器装置，包括包含第一材料的第一层和邻近第一层布置的第二层，第二层包括应变硅，其中第二层还包括基本上位于应变硅内的光吸收区，其中， 第一层或第二层被布置在基板上。
-
公开(公告)号：US20090140362A1
公开(公告)日：2009-06-04
申请号：US12325195
申请日：2008-11-29
IPC分类号： H01L31/00
CPC分类号： H01L27/1446 , H01L31/02327
摘要： A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.
摘要翻译： 一种光电检测器，包括光栅（PC）。 光栅（PC）布置在有源半导体层的表面的顶部。 在不间断的第一条带（ST1）中以第一预定间隔（a）中的第一方向（x）布置光栅（PC），并且沿第二方向（y ）在第二预定间隔（b）中。 第二条带（ST2）各自包括形成预定间隙（d）的每个两个相邻的第一条带（ST1）之间的区域中的至少一个中断。 正掺杂区域（P）和负掺杂区域（N）各自被布置为与第一条带（ST1）平行的条带，使得在每两个相邻的第一条带（ST1）之间的区域中交替地将任一个正掺杂区域 P）或负掺杂区域（N）之一。
-
公开(公告)号：US20090179225A1
公开(公告)日：2009-07-16
申请号：US12350991
申请日：2009-01-09
IPC分类号： H01L31/0256 , H01L21/20
CPC分类号： H01L27/14692 , H01L27/1462
摘要： A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.
摘要翻译： 一种光检测器装置，包括包含第一材料的第一层和邻近第一层布置的第二层，第二层包括应变硅，其中第二层还包括基本上位于应变硅内的光吸收区，其中， 第一层或第二层被布置在基板上。
-
公开(公告)号：US07821091B2
公开(公告)日：2010-10-26
申请号：US12325195
申请日：2008-11-29
IPC分类号： H01L31/052
CPC分类号： H01L27/1446 , H01L31/02327
摘要： A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.
摘要翻译： 一种光电检测器，包括光栅（PC）。 光栅（PC）布置在有源半导体层的表面的顶部。 在不间断的第一条带（ST1）中以第一预定间隔（a）中的第一方向（x）布置光栅（PC），并且沿第二方向（y ）在第二预定间隔（b）中。 第二条带（ST2）各自包括形成预定间隙（d）的每个两个相邻的第一条带（ST1）之间的区域中的至少一个中断。 正掺杂区域（P）和负掺杂区域（N）各自被布置为与第一条带（ST1）平行的条带，使得在每两个相邻的第一条带（ST1）之间的区域中交替地将任一个正掺杂区域 P）或负掺杂区域（N）之一。
-
5.发明授权公开(公告)号：US08225241B2
公开(公告)日：2012-07-17
申请号：US12267820
申请日：2008-11-10
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，关断状态和导通状态的特征在于分别与施加的电压V和发生角度的角度相关联的λ/ 2的光程长度和大约零的偏移; i。
-
6.发明授权公开(公告)号：US08543961B2
公开(公告)日：2013-09-24
申请号：US13492964
申请日：2012-06-11
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ，并以入射角入射到器件的半导体结构上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于，通过半导体结构分别与入射电压V和入射角分别对入射光进行高吸收和低吸收。 对于反射模式，关闭状态和导通状态的特征在于分别与施加的电压V和入射角相关联的λ/ 2的光程长度和大约零的偏移。
-
公开(公告)号：US20120246608A1
公开(公告)日：2012-09-27
申请号：US13492964
申请日：2012-06-11
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，OFF状态和ON状态的特征在于，与所施加的电压V和入射角一起分别在λ/ 2和约零的光程长度上移动; i。
-
8.发明申请METHOD AND APPARATUS FOR DESIGNING A DEVICE FOR ELECTRO-OPTICAL MODULATION OF LIGHT INCIDENT UPON THE DEVICE 有权用于设计用于电子光调制装置上的轻事件的装置的方法和装置公开(公告)号：US20100122221A1
公开(公告)日：2010-05-13
申请号：US12267820
申请日：2008-11-10
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，关断状态和导通状态的特征在于分别与施加的电压V和发生角度的角度相关联的λ/ 2的光程长度和大约零的偏移; i。
-
公开(公告)号：US08299556B2
公开(公告)日：2012-10-30
申请号：US12632129
申请日：2009-12-07
申请人： Matthias Fertig , Thomas Pflueger , Thomas Morf , Nikolaj Moll
发明人： Matthias Fertig , Thomas Pflueger , Thomas Morf , Nikolaj Moll
IPC分类号： H01L31/0232 , H01L31/00 , H01L21/00
CPC分类号： H01L31/0687 , H01L25/043 , H01L31/02167 , H01L31/043 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , H01L2924/00
摘要： A multi-junction opto-electronic device including a stack of wavelength selective absorption layers is proposed. The absorption layers include each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.
摘要翻译： 提出了包括一叠波长选择吸收层的多结光电子器件。 吸收层包括每个具有特定间距的光栅的第一层，其限定入射光的波长，以在第三电不活泼层上自身内的相邻的第二电活性层中被吸收。 不同吸收层内的第二电活性层与横向触点电连接以提取由活性层内的吸收的入射光产生的电荷载流子。 吸收层的第一层内的光栅由具有特定宽度的周期性条纹限定，这取决于要被各个吸收层吸收的波长。 条纹对准的周期由光栅的间距限定。 有利地，可以使用普通的硅技术。
-
公开(公告)号：US09219177B2
公开(公告)日：2015-12-22
申请号：US13639782
申请日：2011-03-25
申请人： Matthias Fertig , Nikolaj Moll , Thomas Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas Morf , Thomas Pflueger
IPC分类号： H01L31/0232 , G02B6/124 , H01L27/146 , H01L31/02 , H01L31/11 , H01L31/113
CPC分类号： H01L31/02327 , G02B6/124 , H01L27/14625 , H01L27/14681 , H01L31/02019 , H01L31/0232 , H01L31/1105 , H01L31/1136
摘要： The photo detector (100, 300, 500, 600, 700, 900) comprises a photo transistor (102, 902). The photo transistor has a light sensitive region (112, 910) for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (118). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern (114, 604, 914, 1010) in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region.
摘要翻译： 光电检测器（100,300,500,600,700,900）包括光电晶体管（102,902）。 光电晶体管具有用于控制光电晶体管的晶体管作用的光敏区域（112,910）。 光电检测器还包括电介质层（118）。 电介质层与光电晶体管接触。 光电检测器还包括与电介质层接触的光栅图案（114,604,914,1010）。 光栅层和电介质层适于将电磁辐射聚焦在光敏区域中。
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.034 秒)
