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公开(公告)号:US06289792B1
公开(公告)日:2001-09-18
申请号:US09653545
申请日:2000-08-31
申请人: Maurizio Grando , Michele Bortoliero , Ken Fox
发明人: Maurizio Grando , Michele Bortoliero , Ken Fox
IPC分类号: A23L100
CPC分类号: A47J37/0713 , F24C3/126
摘要: The invention comprises a gas barbecue (1; 20) for grilling food comprising a box-shaped container (2) with a griddle (3) that carries the food being cooked; one or more burners (4) placed underneath said griddle (3), each of which has a gas supply line (5); an ignition device (14) for said one or more burners (4); a main pipeline (6) which is connected to said supply lines (5) for each burner (4), connected to a gas supply source (F) and provided with a cut-off valve (7; 21); the cut-off valve's operation is connected to a timer (8) suited to keeping it open for a pre-set time.
摘要翻译: 本发明包括一种用于烧烤食物的燃气烧烤炉(1; 20),其包括带有托盘(3)的盒形容器(2) 一个或多个放置在所述扒炉(3)下方的燃烧器(4),每个燃烧器具有气体供应管线(5); 一个用于所述一个或多个燃烧器(4)的点火装置(14); 主管道(6),其连接到每个燃烧器(4)的所述供应管线(5),连接到气体供应源(F)并设有截止阀(7; 21); 截止阀的操作连接到适于保持打开预定时间的定时器(8)。
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公开(公告)号:US20050161689A1
公开(公告)日:2005-07-28
申请号:US11005505
申请日:2004-12-06
申请人: Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chen , Hong Choi , John Fan
发明人: Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chen , Hong Choi , John Fan
CPC分类号: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/106 , H01S5/3425 , H01S5/34333
摘要: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
摘要翻译: 一种光电器件,例如LED或激光器,其通过在由III族氮化物的量子阱层中的横向厚度变化形成的量子限制区域中的载流子(电子和空穴)的复合产生自发发射。
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公开(公告)号:US20120260476A1
公开(公告)日:2012-10-18
申请号:US13452888
申请日:2012-04-22
申请人: Bruce Burnside , Ken Fox , Tim Spurlock
发明人: Bruce Burnside , Ken Fox , Tim Spurlock
IPC分类号: A61G17/007 , A61G17/00
CPC分类号: A61G17/007 , A61G17/02 , A61G17/04 , A61G2203/90
摘要: A casket is provided that is made entirely from naturally occurring materials. The casket includes a box having a bottom and a plurality of side walls. A hinge assembly is provided including a first member that is secured to a side wall of the box and a second member that is pivotally supported on the first member by a dowel pin. A lid is secured to the second member of the hinge assembly for pivotal movement between a closed position and an opened position.
摘要翻译: 提供完全由天然材料制成的棺材。 棺材包括具有底部和多个侧壁的箱体。 提供了铰链组件,其包括固定到箱的侧壁的第一构件和通过定位销枢转地支撑在第一构件上的第二构件。 盖子被固定到铰链组件的第二构件,用于在关闭位置和打开位置之间枢转运动。
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公开(公告)号:US07339848B1
公开(公告)日:2008-03-04
申请号:US11343341
申请日:2006-01-30
申请人: Galen Stansell , Frederick Jenne , Igor Kouznetzov , Ken Fox
发明人: Galen Stansell , Frederick Jenne , Igor Kouznetzov , Ken Fox
IPC分类号: G11C17/18
CPC分类号: G11C17/18
摘要: A programmable latch circuit (100) can include a programmable data circuit (104) with a data load path (116) that can enable a data value to be recalled into a volatile latch (102). A data load path (116) can be formed with devices (P100-P102) having low threshold voltages. Data can be loaded via data load path at lower power supply voltages levels, such as on power-on and/or reset operations. Other embodiments disclose, self-test circuits, full redundancy capabilities, and resistors for limiting current draw in an anti-fuse program operation.
摘要翻译: 可编程锁存电路(100)可以包括具有数据加载路径(116)的可编程数据电路(104),该数据加载路径可使数据值能够被调用到易失性锁存器(102)中。 数据加载路径(116)可以由具有低阈值电压的器件(P 100 -P 102)形成。 数据可以通过数据加载路径在较低的电源电压电平下加载,例如上电和/或复位操作。 其他实施例公开了自检电路,全冗余能力和用于限制反熔丝编程操作中的电流消耗的电阻器。
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公开(公告)号:US06881983B2
公开(公告)日:2005-04-19
申请号:US10207649
申请日:2002-07-26
申请人: Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chia Chen , Hong K. Choi , John C. C. Fan
发明人: Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chia Chen , Hong K. Choi , John C. C. Fan
CPC分类号: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/106 , H01S5/3425 , H01S5/34333
摘要: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
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