公开(公告)号：US06881983B2

公开(公告)日：2005-04-19

申请号：US10207649

申请日：2002-07-26

申请人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

发明人： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/106 ,  H01S5/3425 ,  H01S5/34333

摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

公开(公告)号：US06479313B1

公开(公告)日：2002-11-12

申请号：US09866442

申请日：2001-05-25

申请人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

发明人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

IPC分类号： H01L2100

CPC分类号： H01L33/325 ,  H01L21/2683 ,  H01L21/3245 ,  H01L33/0095

摘要： Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

摘要翻译： 用x射线辐射照射化合物半导体材料以活化掺杂剂材料。 主动载流子浓度效率可以通过已知方法，包括常规热退火来改善。 该方法可用于掺杂p型材料的III-V族化合物，包括GaN基半导体，以形成低电阻率p-GaN。 该方法可以进一步用于制造具有改进的正偏压和发光效率的GaN基LED（包括蓝色LED）。

公开(公告)号：US06847052B2

公开(公告)日：2005-01-25

申请号：US10463219

申请日：2003-06-17

申请人： John C. C. Fan ,  Hong K. Choi ,  Tchang-Hun Oh ,  Jyh Chia Chen ,  Jagdish Narayan

发明人： John C. C. Fan ,  Hong K. Choi ,  Tchang-Hun Oh ,  Jyh Chia Chen ,  Jagdish Narayan

IPC分类号： H01L21/285 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016 ,  Y10S257/918

摘要： A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.

摘要翻译： 半导体器件包括：衬底; 在该衬底上的n型半导体层，该n型半导体层具有平坦的顶表面; p型半导体层，其延伸在n型半导体层的主要部分上，并且不延伸在邻近n型半导体的平面顶表面的至少一个边缘的n型半导体层的暴露区域上 层; 设置在所述n型半导体层的所述露出区域上的第一焊盘; 在p型半导体层上延伸的电极层; 以及在所述电极层上的第二焊盘，所述焊盘包括用于固定电互连的中心区域和从所述中心区域突出的至少一个指状区域，所述指状区域具有远离所述中心部分的长度 区域和宽度明显小于长度。 还描述了一种半导体器件的制造方法。

公开(公告)号：US07122841B2

公开(公告)日：2006-10-17

申请号：US10860798

申请日：2004-06-03

申请人： Tchang-Hun Oh ,  Hong K. Choi ,  John C. C. Fan ,  Jagdish Narayan

发明人： Tchang-Hun Oh ,  Hong K. Choi ,  John C. C. Fan ,  Jagdish Narayan

IPC分类号： H01L27/15

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/32 ,  H01L33/40

摘要： A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode. The n-side bonding pad typically is formed on the n-type semiconductor layer, and forms a good ohmic contact with the n-type semiconductor layer.

摘要翻译： 半导体器件包括具有第一主表面的衬底; 在所述衬底的第一表面上的半导体器件结构，所述器件结构包括n型半导体层和在所述n型半导体层上的p型半导体层; 具有第一表面和第二表面的p侧电极，其中所述第一表面与所述p型半导体层电接触; 以及p侧电极上的p侧接合焊盘。 优选地，半导体器件还包括在n型半导体层上的n侧焊盘。 p侧和n侧接合焊盘各自独立地包括作为其顶层的金层和在顶部金层下方的单层或多层扩散阻挡层。 任选地，在扩散阻挡层下方还包括一个或多个金属层。 通常，p侧焊盘形成在p侧电极上。 n型接合焊盘通常形成在n型半导体层上，与n型半导体层形成良好的欧姆接触。

公开(公告)号：US06734091B2

公开(公告)日：2004-05-11

申请号：US10187465

申请日：2002-06-28

申请人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

发明人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

IPC分类号： H01L2128

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L33/32

摘要： An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

摘要翻译： 公开了一种用于p型氮化镓基半导体材料的改进的电极，其包括氧化金属层和金属材料的第一和第二层。 电极通过在p型半导体层上沉积三个或更多个金属层而形成，使得至少一个金属层与p型半导体层接触。 然后至少两个金属层在氧的存在下进行退火处理以氧化至少一个金属层以形成金属氧化物。 电极为p型氮化镓基半导体材料提供良好的欧姆接触，从而降低氮化镓基半导体器件的工作电压。

公开(公告)号：US07002180B2

公开(公告)日：2006-02-21

申请号：US10187468

申请日：2002-06-28

申请人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

发明人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

IPC分类号： H01L27/15

CPC分类号： H01L33/40

摘要： A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

摘要翻译： 用于电极的焊盘与包括铝的p型氮化镓基半导体材料接触。 接合焊盘还可以包括一种或多种选自钯，铂，镍和金的金属。 接合焊盘可以用于在诸如发光二极管或激光二极管的半导体器件中的p电极上附接接合线，而不会导致电极的光透射和欧姆特性的劣化。 接合焊盘可以与与n型氮化镓基半导体材料（n电极）欧姆接触的与电极基本相同的材料形成。 这允许在制造基本上降低制造器件的成本的氮化镓基发光器件时同时形成焊盘和n电极。

公开(公告)号：US08072406B2

公开(公告)日：2011-12-06

申请号：US12823547

申请日：2010-06-25

申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

IPC分类号： G09G3/36

CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

公开(公告)号：US5251225A

公开(公告)日：1993-10-05

申请号：US880622

申请日：1992-05-08

申请人： Stephen J. Eglash ,  Hong K. Choi

发明人： Stephen J. Eglash ,  Hong K. Choi

IPC分类号： H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/34306

摘要： A GaInAsSb quantum-well laser for highly efficient conversion of input energy to output infrared light is described. The laser consists of an MBE grown active region formed of a plurality of GaInAsSb quantum-well layers separated by AlGaAsSb barrier layers. The active region is sandwiched between AlGaAsSb cladding layers in which the Al content is greater than the Al content in the barrier layers.

摘要翻译： 描述了用于将输入能量高效转换成输出红外光的GaInAsSb量子阱激光器。 激光器由由AlGaAsSb阻挡层分离的多个GaInAsSb量子阱层形成的MBE生长的有源区组成。 有源区夹在其中Al含量大于势垒层中的Al含量的AlGaAsSb包覆层之间。

公开(公告)号：US20100259517A1

公开(公告)日：2010-10-14

申请号：US12823547

申请日：2010-06-25

申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

IPC分类号： G06F3/038 ,  G02F1/136

CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

公开(公告)号：US07768611B2

公开(公告)日：2010-08-03

申请号：US11893594

申请日：2007-08-16

申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

IPC分类号： G02F1/1343 ,  G02F1/1339

CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。