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    Gallium nitride based light-emitting device
    3.
    发明授权
    Gallium nitride based light-emitting device 有权
    基于氮化镓的发光器件

    公开(公告)号：US07345315B2

    公开(公告)日：2008-03-18

    申请号：US11352205

    申请日：2006-02-13

    申请人： Schang-Jing Hon ,  Jenn-Bin Huang

    发明人： Schang-Jing Hon ,  Jenn-Bin Huang

    IPC分类号： H01L29/22

    CPC分类号： H01L33/32 ,  H01L33/105 ,  H01L33/465

    摘要： A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.

    摘要翻译： 公开了一种用于白色发光器件（LED）和LED本身的制造方法和由此制造的发光结构。 白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷 产生天然白色光，有助于发光效率的提升。 除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

    Structure and manufacturing of gallium nitride light emitting diode
    4.
    发明授权
    Structure and manufacturing of gallium nitride light emitting diode 有权
    氮化镓发光二极管的结构和制造

    公开(公告)号：US07208752B2

    公开(公告)日：2007-04-24

    申请号：US10840267

    申请日：2004-05-07

    申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

    发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

    IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

    摘要： A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

    摘要翻译： 氮化镓发光二极管的结构具有包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被欧姆接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

    Gallium-nitride based light emitting diode structure and fabrication thereof
    5.
    发明申请
    Gallium-nitride based light emitting diode structure and fabrication thereof 有权
    氮化镓基发光二极管结构及其制造

    公开(公告)号：US20060244017A1

    公开(公告)日：2006-11-02

    申请号：US11428405

    申请日：2006-07-03

    申请人： Mu-Jen Lai ,  Schang-Jing Hon

    发明人： Mu-Jen Lai ,  Schang-Jing Hon

    IPC分类号： H01L29/80 ,  H01L31/112

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

    摘要翻译： 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

    Light emitting semiconductor device having reflection layer structure
    6.
    发明授权
    Light emitting semiconductor device having reflection layer structure 有权
    具有反射层结构的发光半导体器件

    公开(公告)号：US06492661B1

    公开(公告)日：2002-12-10

    申请号：US09434316

    申请日：1999-11-04

    申请人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

    发明人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

    IPC分类号： H01L3300

    CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/145

    摘要： A light-emitting device with a reflection layer is disclosed. The reflection layer is formed on a light emitting stack structure. A second substrate is subsequently combined with the reflection layer, and then the original substrate of the stack structure is removed, such that the second substrate becomes the substrate of the device. The reflection layer can effectively reflect the light emitted from the light emitting stack structure and directed to the substrate, and thus can increase the light-emitting efficiency of a surface-emitting type light-emitting device. The invention can also convert a light-emnitting device using an insulated substrate to be the one having vertical type electrode structure so as to effectively reduce the wafer area used for a die and facilitate subsequent wiring and packaging processes using traditional mechanisms.

    摘要翻译： 公开了一种具有反射层的发光器件。 反射层形成在发光堆叠结构上。 随后将第二衬底与反射层组合，然后去除堆叠结构的原始衬底，使得第二衬底变成器件的衬底。 反射层可以有效地反射从发光堆叠结构发出的光并被引导到衬底，从而可以提高表面发射型发光器件的发光效率。 本发明还可以将使用绝缘基板的发光装置转换为具有垂直型电极结构的发光装置，以便有效地减少用于晶片的晶片面积，并利用传统的机制促进后续的布线和封装工艺。

    Light-emitting device
    7.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09232586B2

    公开(公告)日：2016-01-05

    申请号：US13336735

    申请日：2011-12-23

    申请人： Schang-Jing Hon ,  Chao-Hsing Chen ,  Hsin-Mao Liu

    发明人： Schang-Jing Hon ,  Chao-Hsing Chen ,  Hsin-Mao Liu

    IPC分类号： H05B37/02 ,  H05B33/08

    CPC分类号： H05B33/0824 ,  H01L2924/0002 ,  H05B33/0815 ,  Y02B20/346 ,  H01L2924/00

    摘要： A light-emitting device is capable of receiving a first voltage signal, a second voltage signal, and a third voltage signal in sequence. The light-emitting device includes a first light-emitting unit, a second light-emitting unit, and a switching. The first voltage signal, the second voltage signal, and the third voltage signal is configured to introduce a first current signal, a second current signal, and a third current signal, respectively. The light-emitting device is configured to emit a first light when introducing the first current signal, the second current signal, and the third current signal. The light-emitting device is configured to emit a second light when introducing the second current signal and the third current signal. The light-emitting device is configured to emit a third light when introducing the second current signal.

    摘要翻译： 发光装置能够依次接收第一电压信号，第二电压信号和第三电压信号。 发光装置包括第一发光单元，第二发光单元和开关。 第一电压信号，第二电压信号和第三电压信号被配置为分别引入第一电流信号，第二电流信号和第三电流信号。 发光装置被配置为在引入第一电流信号，第二电流信号和第三电流信号时发射第一光。 发光装置被配置为在引入第二电流信号和第三电流信号时发射第二光。 发光装置被配置为在引入第二电流信号时发射第三光。

    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    光电装置及其制造方法

    公开(公告)号：US20130032848A1

    公开(公告)日：2013-02-07

    申请号：US13565993

    申请日：2012-08-03

    申请人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    发明人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    IPC分类号： H01L33/48

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译： 光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及 与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。