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11 条记录 (耗时 0.012 秒)

    Method and apparatus for diffusion into semiconductor materials
    1.
    发明授权
    Method and apparatus for diffusion into semiconductor materials 有权
    扩散到半导体材料中的方法和装置

    公开(公告)号：US09087951B2

    公开(公告)日：2015-07-21

    申请号：US13630440

    申请日：2012-09-28

    申请人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

    发明人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

    IPC分类号： H01L21/22 ,  H01L31/107 ,  H01L31/18 ,  H01L21/223

    CPC分类号： H01L31/107 ,  H01L21/223 ,  H01L21/2233 ,  H01L31/1804 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate.

    摘要翻译： 公开了一种通过控制半导体制造工艺中的扩散路径来管理扩散过程的方法和装置。 在一个实施例中，一种用于处理衬底的方法，包括在所述衬底上形成一个或多个扩散区域的步骤; 将基板设置在扩散室中，其中扩散室处于真空状态，并且其中的源材料被加热并蒸发; 并且将所述源材料扩散到所述衬底上的扩散区域中，其中所述源材料行进通过扩散控制单元，所述扩散控制单元适于管理其在扩散室中的通量，因此源材料的浓度在衬底上方的扩散区域中是均匀的。

    Reverse conductive nano array and manufacturing method of the same
    2.
    发明授权
    Reverse conductive nano array and manufacturing method of the same 有权
    反向导电纳米阵列及其制造方法相同

    公开(公告)号：US08796749B2

    公开(公告)日：2014-08-05

    申请号：US13586435

    申请日：2012-08-15

    申请人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

    发明人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

    IPC分类号： H01L31/0236

    CPC分类号： H01L31/02327 ,  H01L31/1075

    摘要： A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer.

    摘要翻译： 高速光电二极管可以包括光电二极管结构，其具有衬底，光吸收层和导光层，其沉积在光电二极管结构的顶表面上并被图案化以形成用于改变入射角的纹理表面 光进入光电二极管结构时增加入射光的光路。 在一个实施例中，导光层可以包括多个多边形，例如三角形突起，以折射入射光，以在进入光电二极管结构时增加其光路。 在另一个实施例中，可以在每个三角形投影的两侧上形成多个纳米级的三角形突起，以更有效地增加光路。 在另一实施例中，多孔材料可用于形成光导层。

    Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes
    4.
    发明授权
    Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes 失效
    制造GaN基p型化合物半导体和发光二极管的方法

    公开(公告)号：US06479313B1

    公开(公告)日：2002-11-12

    申请号：US09866442

    申请日：2001-05-25

    申请人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

    发明人： Jinlin Ye ,  Jyh-Chia Chen ,  Shirong Liao ,  Hong K. Choi ,  John C. C. Fan

    IPC分类号： H01L2100

    CPC分类号： H01L33/325 ,  H01L21/2683 ,  H01L21/3245 ,  H01L33/0095

    摘要： Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

    摘要翻译： 用x射线辐射照射化合物半导体材料以活化掺杂剂材料。 主动载流子浓度效率可以通过已知方法，包括常规热退火来改善。 该方法可用于掺杂p型材料的III-V族化合物，包括GaN基半导体，以形成低电阻率p-GaN。 该方法可以进一步用于制造具有改进的正偏压和发光效率的GaN基LED（包括蓝色LED）。

    SILICON WAVEGUIDE INTEGRATED WITH GERMANIUM PIN PHOTODETECTOR
    5.
    发明申请
    SILICON WAVEGUIDE INTEGRATED WITH GERMANIUM PIN PHOTODETECTOR 审中-公开

    公开(公告)号：US20190019902A1

    公开(公告)日：2019-01-17

    申请号：US16035572

    申请日：2018-07-13

    申请人： Jinlin Ye ,  Shirong Liao

    发明人： Jinlin Ye ,  Shirong Liao

    IPC分类号： H01L31/0232 ,  G02B6/136 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

    摘要： A method for manufacturing an integrated photodetector may include steps of providing a silicon-insulator substrate including a top layer, an insulator layer, and a base layer; partially removing the top layer to form an optical waveguide over the insulator layer; forming an opening at least through the cladding layer and the insulator layer extending to a first portion of the base layer; and epitaxially growing a lattice-mismatched semiconductor layer over the first portion of the base layer at least in the opening, at least a portion of the semiconductor layer extending above the insulator layer to form a photodetector including an intrinsic region optically coupled to the waveguide. In one embodiment, the intrinsic region of the photodetector is butt-coupled to the optical waveguide. In another embodiment, the intrinsic region of the photodetector is evanescently coupled to the optical waveguide.

    REVERSE CONDUCTIVE NANO ARRAY AND MANUFACTURING METHOD OF THE SAME
    6.
    发明申请
    REVERSE CONDUCTIVE NANO ARRAY AND MANUFACTURING METHOD OF THE SAME 有权
    反向导电纳米阵列及其制造方法

    公开(公告)号：US20140050492A1

    公开(公告)日：2014-02-20

    申请号：US13586435

    申请日：2012-08-15

    申请人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

    发明人： Shirong Liao ,  Jinlin Ye ,  Bo Liao ,  Jie Dong

    IPC分类号： H01L31/0236 ,  H04B10/14

    CPC分类号： H01L31/02327 ,  H01L31/1075

    摘要： A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer.

    摘要翻译： 高速光电二极管可以包括光电二极管结构，其具有衬底，光吸收层和导光层，其沉积在光电二极管结构的顶表面上并被图案化以形成用于改变入射角的纹理表面 光进入光电二极管结构时增加入射光的光路。 在一个实施例中，导光层可以包括多个多边形，例如三角形突起，以折射入射光，以在进入光电二极管结构时增加其光路。 在另一个实施例中，可以在每个三角形投影的两侧上形成多个纳米级的三角形突起，以更有效地增加光路。 在另一实施例中，多孔材料可用于形成光导层。

    Monolithic multi-color, multi-quantum well semiconductor LED
    7.
    发明授权
    Monolithic multi-color, multi-quantum well semiconductor LED 有权
    单片多色，多量子阱半导体LED

    公开(公告)号：US07323721B2

    公开(公告)日：2008-01-29

    申请号：US11210847

    申请日：2005-08-25

    申请人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Milton Yeh

    发明人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Milton Yeh

    IPC分类号： H01L29/201

    CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32

    摘要： A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

    摘要翻译： 单片，多色半导体发光二极管（LED）由多带隙多量子阱（MQW）有源发光区域形成，该发光区域以间隔开的波长带或范围从紫外到红色的区域发光。 MQW主动发光区域包括包含n个量子势垒的MQW层堆叠，其间隔开n-1个量子阱。 实施例包括其中MQW层堆叠包括用于发射两个不同波长的光的至少两个不同带隙的量子阱，例如在蓝色或绿色区域以及至少一个其它区域中，并且排放的强度被调整为 提供组合发光的预选颜色，优选为白光。

    Monolithic multi-color, multi-quantum well semiconductor LED
    8.
    发明申请
    Monolithic multi-color, multi-quantum well semiconductor LED 有权
    单片多色，多量子阱半导体LED

    公开(公告)号：US20060049415A1

    公开(公告)日：2006-03-09

    申请号：US11210847

    申请日：2005-08-25

    申请人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Yeh

    发明人： Shirong Liao ,  Jinlin Ye ,  Theeradetch Detchprohm ,  Jyh-Chia Chen ,  Yea-Chuan Yeh

    IPC分类号： H01L33/00

    CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32

    摘要： A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

    摘要翻译： 单片，多色半导体发光二极管（LED）由多带隙多量子阱（MQW）有源发光区域形成，该发光区域以间隔开的波长带或范围从紫外到红色的区域发光。 MQW主动发光区域包括包含n个量子势垒的MQW层堆叠，其间隔开n-1个量子阱。 实施例包括其中MQW层堆叠包括用于发射两个不同波长的光的至少两个不同带隙的量子阱，例如在蓝色或绿色区域以及至少一个其它区域中，并且排放的强度被调整为 提供组合发光的预选颜色，优选为白光。

    METHOD AND APPARATUS FOR DIFFUSINON INTO SEMICONDUCTOR MATERIALS
    9.
    发明申请
    METHOD AND APPARATUS FOR DIFFUSINON INTO SEMICONDUCTOR MATERIALS 审中-公开
    分子式为半导体材料的方法与装置

    公开(公告)号：US20140093996A1

    公开(公告)日：2014-04-03

    申请号：US13630440

    申请日：2012-09-28

    申请人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

    发明人： Jinlin Ye ,  Shirong Liao ,  Bo Liao ,  Jie Dong

    IPC分类号： H01L21/223 ,  H01L31/18

    CPC分类号： H01L31/107 ,  H01L21/223 ,  H01L21/2233 ,  H01L31/1804 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate.

    摘要翻译： 公开了一种通过控制半导体制造工艺中的扩散路径来管理扩散过程的方法和装置。 在一个实施例中，一种用于处理衬底的方法，包括在所述衬底上形成一个或多个扩散区域的步骤; 将基板设置在扩散室中，其中扩散室处于真空状态，并且其中的源材料被加热并蒸发; 并且将所述源材料扩散到所述衬底上的扩散区域中，其中所述源材料行进通过扩散控制单元，所述扩散控制单元适于管理其在扩散室中的通量，因此源材料的浓度在衬底上方的扩散区域中是均匀的。