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17 条记录 (耗时 0.019 秒)

    Method of patterning photosensitive material on a substrate containing a latent acid generator
    1.
    发明授权
    Method of patterning photosensitive material on a substrate containing a latent acid generator 失效
    在含有潜酸产生剂的基材上形成感光材料的方法

    公开(公告)号：US08475667B2

    公开(公告)日：2013-07-02

    申请号：US12820904

    申请日：2010-06-22

    申请人： Maxime Darnon ,  Pratik P. Joshi ,  Qinghuang Lin

    发明人： Maxime Darnon ,  Pratik P. Joshi ,  Qinghuang Lin

    IPC分类号： H01B13/00

    CPC分类号： B82Y40/00 ,  G03F7/0046 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  Y10T428/24612

    摘要： The present disclosure relates to a method of patterning a photosensitive material on a polymeric fill matrix comprising at least one latent photoacid generator; and a structure prepared according to said method. The method comprises: a. depositing a polymeric fill matrix comprising at least one latent photoacid generator; b. curing the polymeric fill matrix; c. depositing a layer of photosensitive material directly onto the cured polymeric fill matrix; and d. forming a pattern with at least one opening in the layer of photosensitive material with lithography.

    摘要翻译： 本公开涉及一种在包含至少一种潜在光酸产生剂的聚合物填充基质上图案化感光材料的方法; 以及根据所述方法制备的结构。 该方法包括：a。 沉积包含至少一种潜在光酸产生剂的聚合物填充基质; b。 固化聚合物填充基质; C。 将一层感光材料直接沉积到固化的聚合物填充基质上; 和d。 通过光刻在光敏材料层中形成具有至少一个开口的图案。

    METHODOLOGY FOR EVALUATION OF ELECTRICAL CHARACTERISTICS OF CARBON NANOTUBES
    3.
    发明申请
    METHODOLOGY FOR EVALUATION OF ELECTRICAL CHARACTERISTICS OF CARBON NANOTUBES 有权
    碳纳米管电气特性评价方法

    公开(公告)号：US20120301980A1

    公开(公告)日：2012-11-29

    申请号：US13569394

    申请日：2012-08-08

    申请人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

    发明人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

    IPC分类号： H01L21/66

    CPC分类号： H01L23/53276 ,  B82Y35/00 ,  B82Y40/00 ,  H01L21/76808 ,  H01L21/76835 ,  H01L21/76885 ,  H01L22/14 ,  H01L2221/1031 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present disclosure relates to a structure comprising 1. an electrically conductive substrate having carbon nanotubes grown thereon; 2. a cured polymeric fill matrix comprising at least one latent photoacid generator embedded around the carbon nanotubes but allowing tips of the carbon nantotubes to be exposed; 3. a layer of patterned and cured photosensitive dielectric material on the cured polymeric fill matrix, wherein tips of the carbon nantobues are exposed within the patterns; and 4. an electrically conductive material filled into the interconnect pattern and in contact with the exposed tips of the carbon nanotubes; and to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.

    摘要翻译： 本公开涉及一种结构，其包括：其上生长有碳纳米管的导电基材; 2.一种固化的聚合物填充基质，其包含嵌入碳纳米管周围的至少一个潜在光致酸发生剂，但允许碳纳米管的尖端暴露; 在固化的聚合物填充基质上的一层图案化和固化的光敏电介质材料，其中碳纳米管的尖端在图案内暴露; 4.一种填充到互连图案中并与碳纳米管的暴露尖端接触的导电材料; 以及制造该结构并使用该结构来测量碳纳米管的电特性的方法。

    METHOD OF PATTERNING PHOTOSENSITIVE MATERIAL ON A SUBSTRATE CONTAINING A LATENT ACID GENERATOR
    4.
    发明申请
    METHOD OF PATTERNING PHOTOSENSITIVE MATERIAL ON A SUBSTRATE CONTAINING A LATENT ACID GENERATOR 失效
    在含有酸性发生剂的底物上涂敷感光材料的方法

    公开(公告)号：US20110311781A1

    公开(公告)日：2011-12-22

    申请号：US12820904

    申请日：2010-06-22

    申请人： Maxime Darnon ,  Pratik P. Joshi ,  Qinghuang Lin

    发明人： Maxime Darnon ,  Pratik P. Joshi ,  Qinghuang Lin

    IPC分类号： B32B3/10 ,  G03F7/20 ,  B82Y99/00

    CPC分类号： B82Y40/00 ,  G03F7/0046 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  Y10T428/24612

    摘要： The present disclosure relates to a method of patterning a photosensitive material on a polymeric fill matrix comprising at least one latent photoacid generator; and a structure prepared according to said method. The method comprises: a. depositing a polymeric fill matrix comprising at least one latent photoacid generator; b. curing the polymeric fill matrix; c. depositing a layer of photosensitive material directly onto the cured polymeric fill matrix; and d. forming a pattern with at least one opening in the layer of photosensitive material with lithography.

    摘要翻译： 本公开涉及一种在包含至少一种潜在光酸产生剂的聚合物填充基质上图案化感光材料的方法; 以及根据所述方法制备的结构。 该方法包括：a。 沉积包含至少一种潜在光酸产生剂的聚合物填充基质; b。 固化聚合物填充基质; C。 将一层感光材料直接沉积到固化的聚合物填充基质上; 和d。 通过光刻在光敏材料层中形成具有至少一个开口的图案。

    USE OF AN ORGANIC PLANARIZING MASK FOR CUTTING A PLURALITY OF GATE LINES
    9.
    发明申请
    USE OF AN ORGANIC PLANARIZING MASK FOR CUTTING A PLURALITY OF GATE LINES 失效
    使用有机平面化掩模切割大量的浇口线

    公开(公告)号：US20130143397A1

    公开(公告)日：2013-06-06

    申请号：US13612981

    申请日：2012-09-13

    申请人： Nicholas C.M. Fuller ,  Pratik P. Joshi ,  Mahmoud Khojasteh ,  Rajiv M. Ranade ,  George G. Totir

    发明人： Nicholas C.M. Fuller ,  Pratik P. Joshi ,  Mahmoud Khojasteh ,  Rajiv M. Ranade ,  George G. Totir

    IPC分类号： H01L21/28

    CPC分类号： H01L21/32139 ,  H01L21/31133 ,  H01L21/823437 ,  H01L21/823828

    摘要： An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.

    摘要翻译： 在其上包括多条栅极线的半导体衬底上形成有机平面化层（OPL）。 每个栅极线包括至少一个高k栅极电介质和金属栅极。 然后将其中形成有至少一种图案的图案化的光致抗蚀剂定位在OPL的顶部。 光致抗蚀剂中的至少一个图案垂直于每个栅极线。 然后通过蚀刻将图案转移到OPL和每个下面的栅极线的部分，以提供多个栅极堆叠，每个栅极堆叠包括至少一个高k栅极电介质部分和金属栅极部分。 然后使用一系列步骤除去图案化的光致抗蚀剂和剩余的OPL层，所述步骤包括首先与第一酸接触，第二次与含铈水溶液接触，并且与第二次酸接触。

    Use of an organic planarizing mask for cutting a plurality of gate lines
    10.
    发明授权
    Use of an organic planarizing mask for cutting a plurality of gate lines 失效
    使用有机平面化掩模来切割多条栅极线

    公开(公告)号：US08455366B1

    公开(公告)日：2013-06-04

    申请号：US13612981

    申请日：2012-09-13

    申请人： Nicholas C. M. Fuller ,  Pratik P. Joshi ,  Mahmoud Khojasteh ,  Rajiv M. Ranade ,  George G. Totir

    发明人： Nicholas C. M. Fuller ,  Pratik P. Joshi ,  Mahmoud Khojasteh ,  Rajiv M. Ranade ,  George G. Totir

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/32139 ,  H01L21/31133 ,  H01L21/823437 ,  H01L21/823828

    摘要： An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.

    摘要翻译： 在其上包括多条栅极线的半导体衬底上形成有机平面化层（OPL）。 每个栅极线包括至少一个高k栅极电介质和金属栅极。 然后将其中形成有至少一种图案的图案化的光致抗蚀剂定位在OPL的顶部。 光致抗蚀剂中的至少一个图案垂直于每个栅极线。 然后通过蚀刻将图案转移到OPL和每个下面的栅极线的部分，以提供多个栅极堆叠，每个栅极堆叠包括至少一个高k栅极电介质部分和金属栅极部分。 然后使用一系列步骤除去图案化的光致抗蚀剂和剩余的OPL层，所述步骤包括首先与第一酸接触，第二次与含铈水溶液接触，并且与第二次酸接触。