公开(公告)号：US4912008A

公开(公告)日：1990-03-27

申请号：US201326

申请日：1988-05-31

申请人： Megumi Naruse ,  Kunihiro Tamahashi ,  Mitsuo Chigasaki ,  Masanobu Hanazono

发明人： Megumi Naruse ,  Kunihiro Tamahashi ,  Mitsuo Chigasaki ,  Masanobu Hanazono

IPC分类号： G03G5/14 ,  G03G5/08 ,  G03G5/082 ,  G03G5/147

CPC分类号： G03G5/08235 ,  G03G5/08221

摘要： In an electrophotographic photosensitive device, which comprises an electroconductive support, a photoconductive layer provided thereon, and a surface protective layer provided on the photoconductive layer, the surface protective layer being made from a film having a density of localized states of not more than 5.times.10.sup.17 cm.sup.-3 and a higher dark resistance than that of the photoconductive layer, the surface protective layer is less susceptible to deterioration, adhesion to the photoconductive layer is enhanced, and thus the device has a prolonged life.

摘要翻译： 在电子照相感光装置中，包括导电载体，设置在其上的光电导层和设置在光电导层上的表面保护层，表面保护层由具有不大于5×10 17 cm的局部状态密度的膜制成 -3，并且比光电导层的暗电阻高，所以表面保护层不易劣化，与光电导层的粘附性增强，因此该器件寿命延长。

公开(公告)号：US5073466A

公开(公告)日：1991-12-17

申请号：US394657

申请日：1989-08-16

申请人： Fuminori Ishikawa ,  Kunihiro Tamahashi ,  Shigeharu Onuma ,  Masatoshi Wakagi ,  Masanobu Hanazono ,  Mitsuyoshi Shoji ,  Takayuki Nakakawaji ,  Yutaka Ito ,  Shigeki Komatsuzaki ,  Yasuo Shimamura ,  Chiaki Yamagishi

发明人： Fuminori Ishikawa ,  Kunihiro Tamahashi ,  Shigeharu Onuma ,  Masatoshi Wakagi ,  Masanobu Hanazono ,  Mitsuyoshi Shoji ,  Takayuki Nakakawaji ,  Yutaka Ito ,  Shigeki Komatsuzaki ,  Yasuo Shimamura ,  Chiaki Yamagishi

IPC分类号： G03G5/147

CPC分类号： G03G5/1476 ,  G03G5/147 ,  G03G5/14708 ,  G03G5/14786

摘要： An electrophotographic member comprising a support, a photoconductive layer formed thereon, and a surface layer formed thereon, said surface layer including or attaching a lubricating agent having a perfluoropolyoxyalkyl or perfluoropolyoxyalkylene group to form an organic surface protective lubricating layer, and a fixing group to be fixed to the surface layer, is excellent in moisture resistance, wear resistance and cleaning properties and thus useful in an electrophotographic apparatus with a long life and high reliability.

公开(公告)号：US5252418A

公开(公告)日：1993-10-12

申请号：US567180

申请日：1990-08-14

申请人： Fuminori Ishikawa ,  Akira Sato ,  Kunihiro Tamahashi ,  Masatoshi Wakagi ,  Katsumi Tamura ,  Masanobu Hanazono ,  Mitsuyoshi Shoji ,  Takayuki Nakakawaji ,  Yutaka Ito ,  Shigeki Komatsuzaki ,  Motoo Akagi ,  Masaaki Imamura

发明人： Fuminori Ishikawa ,  Akira Sato ,  Kunihiro Tamahashi ,  Masatoshi Wakagi ,  Katsumi Tamura ,  Masanobu Hanazono ,  Mitsuyoshi Shoji ,  Takayuki Nakakawaji ,  Yutaka Ito ,  Shigeki Komatsuzaki ,  Motoo Akagi ,  Masaaki Imamura

IPC分类号： G03G5/147 ,  G03G5/14

CPC分类号： G03G5/14704

摘要： An electrophotographic photoreceptor comprising a photoconductive layer comprising a photoconductor, a support for the photoconductive layer and a surface layer formed on the photoconductive layer and comprising a curable resin film and an inorganic insulator pieces having a size larger than the film thickness of the curable resin film. In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces have protruded from the curable resin film. Since the curable resin is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces prevent the abrasion of the resin, the surface layer having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized. Further, by covering the surface layer with a fluorine-containing lubricant, the surface layer having a low friction coefficient and excellent cleaning characteristics is obtained, and besides the resin constituting the surface layer absorbs little moisture. As a result, it becomes possible to use the a-Si:H photoreceptors without a heater. Also, the surface layer of the present invention can be removed and then re-formed.

公开(公告)号：US5204202A

公开(公告)日：1993-04-20

申请号：US494527

申请日：1990-03-16

申请人： Fuminori Ishikawa ,  Kunihiro Tamahashi ,  Shigeharu Onuma ,  Masatoshi Wakagi ,  Masanobu Hanazono ,  Mitsuyoshi Shoji ,  Takayuki Nakakawaji ,  Yutaka Ito ,  Shigeki Komatsuzaki ,  Chiaki Yamabishi

发明人： Fuminori Ishikawa ,  Kunihiro Tamahashi ,  Shigeharu Onuma ,  Masatoshi Wakagi ,  Masanobu Hanazono ,  Mitsuyoshi Shoji ,  Takayuki Nakakawaji ,  Yutaka Ito ,  Shigeki Komatsuzaki ,  Chiaki Yamabishi

IPC分类号： G03G5/00 ,  G03G5/08 ,  G03G5/147

CPC分类号： G03G5/005 ,  G03G5/14704

摘要： An electrophotographic photosensitive element, e.g. for a photocopier or laser printer, comprises a substrate and a plurality of layers on the substrate including a photoconductive layer of a-Si:H and a protective and lubricating layer which is outermost from said substrate. To provide wear resistance and long life-time of the protective and lubricating layer, this layer comprises a microporous solid material having a pore structure which extends substantially over the whole thickness of the material and a hydrophobic lubricant carried by said solid material. The lubricant includes a liquid film and often times a non-particulate solid film, and provides at least part of the outer surface of the element and is present also in the pores of said microporous solid material.

公开(公告)号：US5229621A

公开(公告)日：1993-07-20

申请号：US888422

申请日：1992-05-26

申请人： Matahiro Komuro ,  Yuzo Kozono ,  Masanobu Hanazono

发明人： Matahiro Komuro ,  Yuzo Kozono ,  Masanobu Hanazono

IPC分类号： H01L27/22

CPC分类号： H01S5/0607 ,  B82Y20/00 ,  G11B11/10543 ,  H01S2301/173 ,  H01S5/34313

摘要： A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material. Furthermore, a magneto-optical read out head is so constructed that the interface formed by joining the magnetostrictive material and the semiconductive material with each other is disposed in the semiconductor laser constituting a head reading out information recorded in a magnetic recording medium.

摘要翻译： 通过将磁致伸缩材料和半导体材料彼此接合而形成的磁性半导体元件，其中半导体材料的晶格常数可通过它们之间的界面处的磁致伸缩而变化; 或者其中通过外延生长形成两种材料之间的界面，并且磁致伸缩的取向与半导体材料的晶格常数变化的取向相同。 接下来，半导体激光器被构造成使得磁致伸缩材料和半导体材料之间的界面设置在半导体激光器中，半导体激光器的波长和输出通过磁致伸缩而变化。 此外，制造磁性半导体元件的方法包括在由半导体材料制成的层上外延生长磁致伸缩材料层的步骤。 此外，磁光读出头被构造成使得通过将磁致伸缩材料和半导体材料彼此接合而形成的界面设置在半导体激光器中，该半导体激光器构成磁头读出记录在磁记录介质中的信息。

公开(公告)号：US4939610A

公开(公告)日：1990-07-03

申请号：US252603

申请日：1988-10-03

申请人： Shinji Narishige ,  Masaaki Sano ,  Kouichi Nishioka ,  Takao Imagawa ,  Masanobu Hanazono ,  Tetsuo Kobayashi ,  Toshihiro Yoshida

发明人： Shinji Narishige ,  Masaaki Sano ,  Kouichi Nishioka ,  Takao Imagawa ,  Masanobu Hanazono ,  Tetsuo Kobayashi ,  Toshihiro Yoshida

IPC分类号： G11B5/31 ,  H01F41/18

CPC分类号： H01F41/18 ,  G11B5/31

摘要： A thin film magnetic head is disclosed which includes a substrate, a first magnetic core disposed on the substrate, a second magnetic core forming a magnetic path in conjunction with the first magnetic core, a conductor coil wound in the magnetic path and a gap formed between ends of the first magnetic core and the second magnetic core. At least one of the first magnetic core and the second magnetic core includes a thin film of a cobalt alloy. The cobalt alloy includes 20-70 atomic percent of cobalt, 20-60 atomic percent of nickel, 12-30 atomic percent of iron and 5-32 atomic percent of palladium.

摘要翻译： 公开了一种薄膜磁头，其包括基板，设置在基板上的第一磁芯，与第一磁芯一起形成磁路的第二磁芯，缠绕在磁路中的导体线圈和形成在磁路之间的间隙 第一磁芯和第二磁芯的端部。 第一磁芯和第二磁芯中的至少一个包括钴合金薄膜。 钴合金包括20-70原子％的钴，20-60原子％的镍，12-30原子％的铁和5-32原子百分比的钯。

公开(公告)号：US4971896A

公开(公告)日：1990-11-20

申请号：US280828

申请日：1988-12-07

申请人： Takashi Kawabe ,  Ataru Kobayashi ,  Moriaki Fuyama ,  Makoto Morijiri ,  Eiji Ashida ,  Masatoshi Tsuchiya ,  Tetsuya Okai ,  Masanobu Hanazono ,  Shinichi Hara ,  Shinji Narishige ,  Hiroshi Ikeda

发明人： Takashi Kawabe ,  Ataru Kobayashi ,  Moriaki Fuyama ,  Makoto Morijiri ,  Eiji Ashida ,  Masatoshi Tsuchiya ,  Tetsuya Okai ,  Masanobu Hanazono ,  Shinichi Hara ,  Shinji Narishige ,  Hiroshi Ikeda

IPC分类号： G03F7/00 ,  G11B5/31

CPC分类号： G11B5/3163 ,  G03F7/0035 ,  Y10S430/165

摘要： A method of forming a thin film pattern on a base having a step portion. This method comprises a first step of forming a thin film of given material on the base, a second step of forming a predetermined pattern of a first photoresist film on said thin film at one of a first portion including a lower part of the step portion and a second portion including an upper part of the step portion, a third step of forming a predetermined pattern of a second photoresist film on said thin film at the other of the first and second portions and a fourth step of applying ion-milling to said thin film of given material using masks said first and second photoresist film patterns formed on said thin film at the first and second portions.

摘要翻译： 在具有台阶部的基底上形成薄膜图案的方法。 该方法包括在基底上形成给定材料的薄膜的第一步骤，第二步骤，在包括台阶部分的下部的第一部分中的一个上形成在所述薄膜上的第一光致抗蚀剂膜的预定图案，以及 第二部分，包括台阶部分的上部;第三步骤，在所述第一和第二部分中的另一个上在所述薄膜上形成第二光致抗蚀剂膜的预定图案;以及第四步骤，将所述薄片 给定材料的膜使用掩模，所述第一和第二部分形成在所述薄膜上形成的第一和第二光致抗蚀剂图案。

公开(公告)号：US4592801A

公开(公告)日：1986-06-03

申请号：US639012

申请日：1984-08-09

申请人： Shinichi Hara ,  Shinji Narishige ,  Tsuneo Yoshinari ,  Mistuo Sato ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Masanobu Hanazono ,  Tetsuo Kobayashi

发明人： Shinichi Hara ,  Shinji Narishige ,  Tsuneo Yoshinari ,  Mistuo Sato ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Masanobu Hanazono ,  Tetsuo Kobayashi

IPC分类号： G11B5/31 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： H01L21/31116 ,  H01L21/302 ,  G11B5/3116 ,  G11B5/3163

摘要： A method of patterning a thin film by dry etching is disclosed in which, in order for a thin alumina film to have a predetermined pattern, the thin alumina film is selectively removed by carrying out the ion beam etching which uses a carbon fluoride gas, while using a photoresist film as a mask.

摘要翻译： 公开了一种通过干蚀刻图案化薄膜的方法，其中为了使氧化铝薄膜具有预定图案，通过进行使用氟化碳气体的离子束蚀刻来选择性地除去薄氧化铝膜，同时 使用光致抗蚀剂膜作为掩模。

公开(公告)号：US4044394A

公开(公告)日：1977-08-23

申请号：US673523

申请日：1976-04-05

申请人： Masanobu Hanazono ,  Osamu Asai ,  Kunio Ono

发明人： Masanobu Hanazono ,  Osamu Asai ,  Kunio Ono

IPC分类号： G11B5/17 ,  G11B5/31 ,  G11B5/20 ,  G11B5/28

CPC分类号： G11B5/313 ,  G11B5/3163

摘要： A narrow track width magnetic head can be formed using an integrated circuit formation techniques such as evaporation plating, chemical etching, etc. But, there has been such a problem that it is difficult to provide a center tap in a conventional thin film magnetic head structure including coils of four or more turns. A magnetic head according to the present invention comprising a coil divided into two sections by the center tap, the electrostatic capacitance of each section being substantially the same. The coil may be formed into a precise pattern with ease by photoetching technique. A plurality of sets of conductive films insulated from one another are provided crossing a magnetic core, each set consisting of two conductive films of the same pattern. The alternating layers of the conductive films are connected on the backward of a magnetic gap to provide the two sections of the coil. A center tap is derived from a connection portion of the two sections of the coil and a coil terminal is provided at each of the opposite free ends of the coil. Thus, the thin film magnetic head having a multi-turn coil with a center tap is provided.

摘要翻译： 可以使用诸如蒸发镀，化学蚀刻等的集成电路形成技术来形成窄轨道宽度的磁头。但是，存在这样的问题，即难以在传统的薄膜磁头结构中提供中心抽头 包括四圈或更多匝的线圈。 根据本发明的磁头包括通过中心抽头分成两部分的线圈，每个部分的静电电容基本上相同。 线圈可以通过光刻技术容易地形成精确的图案。 跨越磁芯设置多个彼此绝缘的导电膜组，每组由相同图案的两个导电膜组成。 导电膜的交替层在磁隙的后方连接以提供线圈的两个部分。 中心抽头来自线圈的两个部分的连接部分，线圈端子设置在线圈的相对的自由端中的每一个处。 因此，提供具有中心抽头的多匝线圈的薄膜磁头。

公开(公告)号：US4003772A

公开(公告)日：1977-01-18

申请号：US550366

申请日：1975-02-18

申请人： Masanobu Hanazono ,  Osamu Asai

发明人： Masanobu Hanazono ,  Osamu Asai

IPC分类号： C09K13/04 ,  C01F7/02 ,  C04B41/91 ,  C23F1/20 ,  H01L21/308 ,  H01L21/316 ,  H01L21/768 ,  H05K3/46 ,  H01L21/441

CPC分类号： H01L21/31687 ,  H01L21/76888

摘要： A thin film integrated circuit consists of a first conductor of aluminum extended in any desired direction on an insulating substrate, an anodized film formed by anodization in a chromic acid solution at positions other than cross-connectional parts on the first conductor, a second conductor cross-connected on the first conductor, and an anodized film formed by anodization in a chromic acid solution on the surface of the second conductor. The thin film integrated circuit is prepared by partially forming an anodized film in a sulfuric acid or oxalic acid solution at cross-connectional parts of a first conductor of aluminum so as not to form any anodized film in a chromic acid solution at the cross-sectional parts of the first conductor of the circuit, masking the partially formed anodized film with a photoresist film, then forming an anodized film by a chromic acid solution, and then removing the photoresist film and the anodized film. After the cross-sectional parts of the first conductor are exposed thereby, a second conductor is formed. For an etching solution for anodized film, which is anodized using the sulfuric acid or oxalic acid solution, a mixed solution consisting of 60 to 40 g/l of chromic acid and 40 to 300 g/l of oxidative acid is used.

摘要翻译： 薄膜集成电路包括在绝缘基板上以任何所需方向延伸的铝的第一导体，通过在铬酸溶液中阳极氧化形成的阳极氧化膜，所述阳极氧化膜在第一导体上的交叉连接部分以外的位置处形成，第二导体十字 连接在第一导体上，以及通过在第二导体的表面上的铬酸溶液中阳极氧化形成的阳极氧化膜。 薄膜集成电路通过在第一铝导体的交叉连接部分部分地形成硫酸或草酸溶液中的阳极氧化膜来制备，以便不在铬酸溶液中在横截面处形成任何阳极氧化膜 电路的第一导体的部分，用光致抗蚀剂膜掩蔽部分形成的阳极氧化膜，然后通过铬酸溶液形成阳极氧化膜，然后除去光致抗蚀剂膜和阳极氧化膜。 在第一导体的横截面部分被暴露之后，形成第二导体。 对于使用硫酸或草酸溶液阳极氧化的阳极氧化膜的蚀刻溶液，使用由60〜40g / l的铬酸和40〜300g / l的氧化酸组成的混合溶液。