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1.发明授权Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam 有权利用平顶激光束制造晶体硅太阳能电池基板的方法公开(公告)号：US09508886B2
公开(公告)日：2016-11-29
申请号：US13271212
申请日：2011-10-11
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068 , H01L31/046 , H01L31/056 , H01L31/0236 , H01L31/0352 , H01L31/0445 , B23K26/40
CPC分类号： H01L31/0463 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L31/02168 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/046 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for making a crystalline silicon solar cell substrate is provided. A doped dielectric layer is deposited over the backside surface of a crystalline silicon substrate, the doped dielectric layer having a polarity opposite the polarity of the crystalline silicon substrate. Portions of the backside surface of the crystalline substrate are exposed through the doped dielectric layer. An overlayer is deposited over the doped dielectric layer and the exposed portions of the backside surface of the crystalline silicon substrate. Pulsed laser ablation of the overlayer is performed with a flat top laser beam on the silicon substrate to form continuous base openings nested within the exposed portions of the backside surface of the crystalline silicon substrate, the flat top laser beam having a beam intensity profile flatter as compared to a Gaussian beam intensity profile and having a rectangular beam cross section. Doped base regions are formed in the crystalline silicon substrate through the continuous base openings.
摘要翻译： 提供了制造晶体硅太阳能电池基板的方法。 掺杂介电层沉积在晶体硅衬底的背面上，掺杂介电层具有与晶体硅衬底的极性相反的极性。 晶体衬底的背面的一部分通过掺杂的介电层露出。 覆盖层沉积在掺杂电介质层和晶体硅衬底的背面的暴露部分上。 在硅衬底上用平顶激光束进行覆盖层的脉冲激光烧蚀，以形成嵌在晶体硅衬底的背面表面的暴露部分内的连续的基底开口，平顶激光束的光束强度分布更平坦 与高斯光束强度分布相比，具有矩形束横截面。 通过连续的基底开口在晶体硅衬底中形成掺杂的基极区域。
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2.发明申请SPATIALLY SELECTIVE LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS 审中-公开高效选择性激光退火应用在高效太阳能电池公开(公告)号：US20130130430A1
公开(公告)日：2013-05-23
申请号：US13477008
申请日：2012-05-21
申请人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan , Heather Deshazer , Vivek Saraswat , Pawan Kapur
发明人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan , Heather Deshazer , Vivek Saraswat , Pawan Kapur
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L31/022441 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1868 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了用于生产各种类型的异质结发射体和均联发射体太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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公开(公告)号：US09455362B2
公开(公告)日：2016-09-27
申请号：US13340903
申请日：2011-12-30
IPC分类号： H01L31/0236 , H01L31/068 , H01L21/225 , H01L21/268 , H01L31/0224 , H01L31/072 , H01L31/18
CPC分类号： H01L31/1804 , H01L21/2254 , H01L21/268 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/1864 , H01L31/1892 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Methods for laser irradiation aluminum doping for monocrystalline silicon substrates are provided. According to one aspect of the disclosed subject matter, aluminum metal contacts are formed directly on a surface of a monocrystalline silicon substrate. The aluminum metal contact is selectively heated via laser irradiation, thereby causing the aluminum and a portion of the monocrystalline silicon substrate in proximity to the aluminum to reach a temperature sufficient to allow at least a portion of the silicon to dissolve in the aluminum. The aluminum and the portion of the monocrystalline silicon substrate in proximity to the aluminum is allowed to cool, thereby forming an aluminum-rich doped silicon layer on the monocrystalline silicon substrate.
摘要翻译： 提供了用于单晶硅衬底的激光照射铝掺杂的方法。 根据所公开的主题的一个方面，铝金属触点直接形成在单晶硅衬底的表面上。 通过激光照射选择性地加热铝金属接触，从而使铝和一部分接近铝的单晶硅衬底达到足以使至少一部分硅溶解在铝中的温度。 将铝和靠近铝的单晶硅衬底的部分冷却，从而在单晶硅衬底上形成富铝的掺杂硅层。
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公开(公告)号：US20150140721A1
公开(公告)日：2015-05-21
申请号：US14137172
申请日：2013-12-20
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02366 , B23K26/066 , B23K26/073 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/186 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了用于产生各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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5.发明授权Laser processing for high-efficiency thin crystalline silicon solar cell fabrication 有权高效薄晶硅太阳能电池制造的激光加工公开(公告)号：US08399331B2
公开(公告)日：2013-03-19
申请号：US13118295
申请日：2011-05-27
IPC分类号： H01L21/8222
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0516 , H01L31/056 , H01L31/0682 , H01L31/0747 , H01L31/18 , H01L31/1884 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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公开(公告)号：US20120171804A1
公开(公告)日：2012-07-05
申请号：US13340877
申请日：2011-12-30
IPC分类号： H01L31/18
CPC分类号： H01L31/02366 , B23K26/066 , B23K26/073 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/186 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了用于产生各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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公开(公告)号：US08637340B2
公开(公告)日：2014-01-28
申请号：US13340877
申请日：2011-12-30
CPC分类号： H01L31/02366 , B23K26/066 , B23K26/073 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/186 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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8.发明申请LASER ANNEALING FOR ALUMINUM DOPING AND FORMATION OF BACK-SURFACE FIELD IN SOLAR CELL CONTACTS 有权太阳能电池联系人的铝合金激光退火和背面表面形成公开(公告)号：US20120178203A1
公开(公告)日：2012-07-12
申请号：US13340903
申请日：2011-12-30
IPC分类号： H01L31/0236 , H01L31/0224 , H01L21/22
CPC分类号： H01L31/1804 , H01L21/2254 , H01L21/268 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/1864 , H01L31/1892 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了用于产生各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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9.发明申请HIGH-THROUGHPUT FLAT TOP LASER BEAM PROCESSING FOR BACK CONTACT SOLAR CELLS 有权用于背面接触太阳能电池的高强度平板顶部激光束处理公开(公告)号：US20120122272A1
公开(公告)日：2012-05-17
申请号：US13271212
申请日：2011-10-11
IPC分类号： H01L31/18
CPC分类号： H01L31/0463 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L31/02168 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/046 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了平顶光束激光加工方案，用于生产各种类型的异质结和同态太阳能电池。 这些方法包括基极和发射极接触开口，背面场形成，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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10.发明申请LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION 有权高效晶体硅太阳能电池制造的激光加工公开(公告)号：US20120028399A1
公开(公告)日：2012-02-02
申请号：US13118295
申请日：2011-05-27
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0516 , H01L31/056 , H01L31/0682 , H01L31/0747 , H01L31/18 , H01L31/1884 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译： 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。
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