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    SPATIALLY SELECTIVE LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS
    1.
    发明申请
    SPATIALLY SELECTIVE LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS 审中-公开
    高效选择性激光退火应用在高效太阳能电池

    公开(公告)号：US20130130430A1

    公开(公告)日：2013-05-23

    申请号：US13477008

    申请日：2012-05-21

    申请人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Heather Deshazer ,  Vivek Saraswat ,  Pawan Kapur

    发明人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Heather Deshazer ,  Vivek Saraswat ,  Pawan Kapur

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1864 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

    摘要： Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    摘要翻译： 公开了用于生产各种类型的异质结发射体和均联发射体太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    Structures and methods for high-efficiency pyramidal three-dimensional solar cells
    9.
    发明授权
    Structures and methods for high-efficiency pyramidal three-dimensional solar cells 有权
    高效金字塔三维太阳能电池的结构与方法

    公开(公告)号：US08937243B2

    公开(公告)日：2015-01-20

    申请号：US12615383

    申请日：2009-11-10

    申请人： Pawan Kapur ,  Mehrdad M. Moslehi

    发明人： Pawan Kapur ,  Mehrdad M. Moslehi

    IPC分类号： H01L31/0352 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0236

    CPC分类号： H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present disclosure enables high-volume cost effective production of three-dimensional thin film solar cell (3-D TFSC) substrates. First, the present disclosure discloses pyramid-like unit cell structure 16 and 50 which enable epitaxial growth through their open pyramidal structure. The present disclosure than gives four 3-D TFSC embodiments 70, 82, 100, and 110 which may combined as necessary. A basic 3-D TFSC having a substrate, emitter, oxidation on the emitter, front and back metal contacts allows simple processing. Other embodiments disclose a selective emitter, selective backside metal contact, and front-side SiN ARC layers. Several processing methods including process flows 150, 200, 250, 300, and 350 enable production of these 3-D TFSC. Further, the present disclosure enables higher throughput through the use of dual sided template 400. By processing the substrate in the template, the present disclosure increases yield and reduces processing steps.

    摘要翻译： 本公开使得能够大量成本有效地生产三维薄膜太阳能电池（3-D TFSC）基板。 首先，本公开公开了金字塔形单元结构16和50，其能够通过其开放金字塔形结构进行外延生长。 本公开不是给出可以根据需要组合的四个三维TFSC实施例70,82,100和110。 在发射器，前后金属触点上具有衬底，发射极，氧化的基本3-D TFSC允许简单的处理。 其他实施例公开了选择性发射极，选择性背侧金属接触和前侧SiN ARC层。 包括工艺流程150,200,250,300和350的几种处理方法使得能够生产这些3-D TFSC。 此外，本公开通过使用双面模板400可实现更高的生产量。通过在模板中处理衬底，本公开增加了产量并降低了处理步骤。