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    N-type doping in metal oxides and metal chalcogenides by electrochemical methods
    2.
    发明授权
    N-type doping in metal oxides and metal chalcogenides by electrochemical methods 有权
    通过电化学方法在金属氧化物和金属硫族化物中进行N型掺杂

    公开(公告)号：US08212246B2

    公开(公告)日：2012-07-03

    申请号：US12540933

    申请日：2009-08-13

    申请人： Meng Tao ,  Xiaofei Han

    发明人： Meng Tao ,  Xiaofei Han

    IPC分类号： H01L29/10

    CPC分类号： C25D3/56 ,  C25D5/50

    摘要： Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.

    摘要翻译： 公开了用于电化学沉积掺杂的金属氧化物和金属硫族化物膜的方法和系统。 一种示例性方法包括将金属前体溶解在溶液中，向溶液中加入卤素前体，并在电化学电池的工作电极和对电极之间施加电势，以将卤素掺杂的金属氧化物或金属硫族化物沉积到衬底上。 另一个示例性方法包括将锌前体溶解到溶液中，向溶液中加入钇前体，以及在电化学电池的工作电极和对电极之间施加电势，以将掺杂掺杂钇的氧化锌沉积到衬底上。 描述和要求保护其他实施例。

    SOLAR CELLS FORMED VIA ALUMINUM ELECTROPLATING
    4.
    发明申请
    SOLAR CELLS FORMED VIA ALUMINUM ELECTROPLATING 审中-公开

    公开(公告)号：US20190312162A1

    公开(公告)日：2019-10-10

    申请号：US16432702

    申请日：2019-06-05

    申请人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

    发明人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

    IPC分类号： H01L31/0224 ,  C25D3/44 ,  C25D7/12 ,  H01L31/18 ,  C25D5/50 ,  C25D3/66

    摘要： Electroplating of aluminum may be utilized to form electrodes for solar cells. In contrast to expensive silver electrodes, aluminum allows for reduced cell cost and addresses the problem of material scarcity. In contrast to copper electrodes which typically require barrier layers, aluminum allows for simplified cell structures and fabrication steps. In the solar cells, point contacts may be utilized in the backside electrodes for increased efficiency. Solar cells formed in accordance with the present disclosure enable large-scale and cost-effective deployment of solar photovoltaic systems.

    SOLAR CELLS FORMED VIA ALUMINUM ELECTROPLATING
    6.
    发明申请
    SOLAR CELLS FORMED VIA ALUMINUM ELECTROPLATING 审中-公开
    通过铝电镀形成的太阳能电池

    公开(公告)号：US20160204289A1

    公开(公告)日：2016-07-14

    申请号：US15079359

    申请日：2016-03-24

    申请人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

    发明人： Meng Tao ,  Wen-Cheng Sun ,  Xiaofei Han

    IPC分类号： H01L31/0224 ,  C25D3/44 ,  C25D7/12

    CPC分类号： H01L31/022458 ,  C25D3/44 ,  C25D3/665 ,  C25D5/50 ,  C25D7/12 ,  C25D7/126 ,  H01L31/022425 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

    摘要： Electroplating of aluminum may be utilized to form electrodes for solar cells. In contrast to expensive silver electrodes, aluminum allows for reduced cell cost and addresses the problem of material scarcity. In contrast to copper electrodes which typically require barrier layers, aluminum allows for simplified cell structures and fabrication steps. In the solar cells, point contacts may be utilized in the backside electrodes for increased efficiency. Solar cells formed in accordance with the present disclosure enable large-scale and cost-effective deployment of solar photovoltaic systems.

    摘要翻译： 铝的电镀可用于形成太阳能电池的电极。 与昂贵的银电极相比，铝允许降低电池成本并解决材料短缺的问题。 与通常需要阻挡层的铜电极相反，铝允许简化的电池结构和制造步骤。 在太阳能电池中，可以在背面电极中使用点接触以提高效率。 根据本公开形成的太阳能电池能够大规模和成本有效地部署太阳能光伏系统。

    SYSTEM AND METHOD FOR PURIFICATION OF ELECTROLYTIC SALT
    7.
    发明申请
    SYSTEM AND METHOD FOR PURIFICATION OF ELECTROLYTIC SALT 有权
    电解盐净化系统及方法

    公开(公告)号：US20160060772A1

    公开(公告)日：2016-03-03

    申请号：US14933274

    申请日：2015-11-05

    申请人： Meng Tao ,  Xiaofei Han

    发明人： Meng Tao ,  Xiaofei Han

    IPC分类号： C25B1/14 ,  C25B11/04 ,  C25B1/00 ,  C25B15/02 ,  C25B9/00 ,  C25B1/26

    CPC分类号： C25B1/14 ,  C01B33/037 ,  C25B1/006 ,  C25B1/26 ,  C25B9/00 ,  C25B11/0421 ,  C25B15/02 ,  C25B15/08 ,  C25F1/00 ,  C30B30/02

    摘要： Methods and systems for removing impurities from an electrolytic salt are disclosed. After removal of impurities from the salt, the salt can be subjected to electrorefining to produce high-purity materials, for example silicon. Impurities are removed from the salt using a system that includes a first working electrode, a counter electrode, and at least one reference electrode. A second working electrode can also be utilized. The salt may be utilized in an electrorefining system, for example a system operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon.

    摘要翻译： 公开了从电解盐中除去杂质的方法和系统。 在从盐中除去杂质后，可以对盐进行电解精炼以产生高纯度材料，例如硅。 使用包括第一工作电极，对电极和至少一个参比电极的系统从盐中除去杂质。 也可以使用第二工作电极。 该盐可用于电解精炼系统，例如以单相或多相操作的系统，以产生高纯度材料，例如太阳能硅。

    N-type Doping in Metal Oxides and Metal Chalcogenides by Electrochemical Methods
    8.
    发明申请
    N-type Doping in Metal Oxides and Metal Chalcogenides by Electrochemical Methods 有权
    通过电化学方法在金属氧化物和金属硫族化物中的N型掺杂

    公开(公告)号：US20100038638A1

    公开(公告)日：2010-02-18

    申请号：US12540933

    申请日：2009-08-13

    申请人： Meng Tao ,  Xiaofei Han

    发明人： Meng Tao ,  Xiaofei Han

    IPC分类号： H01L29/12 ,  C25D11/00 ,  C25D9/04

    CPC分类号： C25D3/56 ,  C25D5/50

    摘要： Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.

    摘要翻译： 公开了用于电化学沉积掺杂的金属氧化物和金属硫族化物膜的方法和系统。 一种示例性方法包括将金属前体溶解在溶液中，向溶液中加入卤素前体，并在电化学电池的工作电极和对电极之间施加电势，以将卤素掺杂的金属氧化物或金属硫族化物沉积到衬底上。 另一个示例性方法包括将锌前体溶解到溶液中，向溶液中加入钇前体，以及在电化学电池的工作电极和对电极之间施加电势，以将掺杂掺杂钇的氧化锌沉积到衬底上。 描述和要求保护其他实施例。

    Suppression of chemical reactivity on semiconductor surfaces
    9.
    发明授权
    Suppression of chemical reactivity on semiconductor surfaces 失效
    抑制半导体表面的化学反应性

    公开(公告)号：US07504155B2

    公开(公告)日：2009-03-17

    申请号：US10822343

    申请日：2004-04-12

    申请人： Meng Tao ,  Wiley P. Kirk

    发明人： Meng Tao ,  Wiley P. Kirk

    IPC分类号： B32B9/00

    CPC分类号： H01L21/045 ,  H01L21/0485 ,  H01L21/28194 ,  H01L21/28512 ,  H01L21/50 ,  H01L29/45 ,  H01L29/456 ,  H01L29/517

    摘要： The present invention relates generally to compositions, kits and methods of providing improved semiconductor surfaces free of dangling bonds and free of strained bonds. One method provides for preventing interfacial reactions between a semiconductor surface and metal or dielectric comprising the steps of preparing a passivated semiconductor surface using a valence-mending agent and depositing a layer of metal or dielectric on the valence-mended semiconductor surface. As further described, a semiconductor surface free of interfacial reactions between the surface and a second molecular species may include a semiconductor surface with one atomic layer of valence-mending atoms, wherein valence mending occurs after introducing the semiconductor surface to a passivating agent. The present invention also includes a kit for preventing interfacial reactions from occurring on a semiconductor surface comprising a passivating agent and an instructional manual.

    摘要翻译： 本发明一般涉及提供无悬挂键并且没有应变键的改进的半导体表面的组合物，试剂盒和方法。 一种方法提供了防止半导体表面和金属或电介质之间的界面反应，包括以下步骤：使用化学修饰剂制备钝化的半导体表面，并且在修补半导体表面上沉积金属或电介质层。 如进一步描述的，在表面和第二分子物质之间没有界面反应的半导体表面可以包括具有一个原子层的修饰原子的半导体表面，其中在将半导体表面引入钝化剂之后发生化学修饰。 本发明还包括用于防止在包含钝化剂和教学手册的半导体表面上发生界面反应的试剂盒。

    Modification of semiconductor surfaces in a liquid
    10.
    发明申请
    Modification of semiconductor surfaces in a liquid 失效

    公开(公告)号：US20060286812A1

    公开(公告)日：2006-12-21

    申请号：US11507223

    申请日：2006-08-21

    申请人： Meng Tao ,  Muhammad Ali

    发明人： Meng Tao ,  Muhammad Ali

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02052 ,  H01L21/306

    摘要： Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations of surface states, passivation, cleaning and/or etching of the surface, thereby providing an improved surface to the semiconductor material. Modifications of surface states include reduction or elimination of an electrically active state of the surface, wherein, at the atomic level, the surface binding characteristics are changed. Passivation includes the termination of dangling bonds on the surface of the semiconductor material.