公开(公告)号：US12125944B2

公开(公告)日：2024-10-22

申请号：US17510282

申请日：2021-10-25

Applicant: Meta Platforms Technologies, LLC

Inventor： Wei Sin Tan ,  Andrea Pinos ,  Xiang Yu ,  Samir Mezouari

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/18 ,  H01L33/32 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.