公开(公告)号：US11841508B2

公开(公告)日：2023-12-12

申请号：US17720100

申请日：2022-04-13

Applicant: Meta Platforms Technologies, LLC

Inventor： Samir Mezouari ,  Andrea Pinos ,  Wei Sin Tan ,  John Lyle Whiteman

IPC: G02B27/01 ,  H01L27/15 ,  H01L33/60 ,  H01L33/30 ,  H01L33/62

CPC classification number: G02B27/0172 ,  H01L27/156 ,  H01L33/30 ,  H01L33/60 ,  H01L33/62 ,  G02B2027/0178

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

公开(公告)号：US20220310891A1

公开(公告)日：2022-09-29

申请号：US17214727

申请日：2021-03-26

Applicant: META PLATFORMS TECHNOLOGIES, LLC

Inventor： Mohsin Aziz ,  Jun-Youn Kim ,  Samir Mezouari ,  Abdul Shakoor ,  James Walker Carswell

IPC: H01L33/60 ,  H01L25/075 ,  H01L33/50 ,  G02B27/01

Abstract: A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.

公开(公告)号：US12300774B2

公开(公告)日：2025-05-13

申请号：US17681241

申请日：2022-02-25

Applicant: Meta Platforms Technologies, LLC

Inventor： Wei Sin Tan ,  Andrea Pinos ,  Samir Mezouari ,  Kathleen Bonnie Vinden ,  John Lyle Whiteman

IPC: H01L33/60 ,  G02B27/01 ,  H01L25/075 ,  H01L33/00

Abstract: A light source comprises a backplane wafer with electrical circuits fabricated thereon, and an array of LEDs coupled to the backplane wafer. Each LED of the array of LEDs comprises a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls, a high-refractive index material region (e.g., with a refractive index greater than about 1.75, such as equal to or greater than a refractive index of the semiconductor epitaxial layers) surrounding the semiconductor epitaxial layers of the mesa structure and including outwardly tilted sidewalls, and a reflective layer on the outwardly tilted sidewalls of the high-refractive index material region. In one example, each LED of the array of LEDs also include a passivation layer on the inwardly tilted mesa sidewalls of the mesa structure.

公开(公告)号：US12125944B2

公开(公告)日：2024-10-22

申请号：US17510282

申请日：2021-10-25

Applicant: Meta Platforms Technologies, LLC

Inventor： Wei Sin Tan ,  Andrea Pinos ,  Xiang Yu ,  Samir Mezouari

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/18 ,  H01L33/32 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.

公开(公告)号：US11508890B2

公开(公告)日：2022-11-22

申请号：US17214727

申请日：2021-03-26

Applicant: Meta Platforms Technologies, LLC

Inventor： Mohsin Aziz ,  Jun-Youn Kim ,  Samir Mezouari ,  Abdul Shakoor ,  James Walker Carswell

IPC: H01L33/60 ,  H01L25/075 ,  G02B27/01 ,  H01L33/50

Abstract: A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.