公开(公告)号：US07592168B2

公开(公告)日：2009-09-22

申请号：US10568132

申请日：2004-08-10

Applicant: Yong Chul Shin ,  John Y J Jeon ,  Kyung Hwa Jung ,  Mi Ran Park ,  Youngso Kim

Inventor： Yong Chul Shin ,  John Y J Jeon ,  Kyung Hwa Jung ,  Mi Ran Park ,  Youngso Kim

IPC: C12N9/80 ,  C07H21/04

CPC classification number: C12N9/80 ,  C12P35/02

Abstract: A CPC acylase mutant of the present invention has an improved reactivity and specific activity to CPC, which can be efficiently employed for directly preparing 7-ACA from CPC by a one-step enzymatic method.

Abstract translation: 本发明的CPC酰基转移酶突变体对CPC具有改善的反应性和比活性，可以有效地用于通过一步酶法直接制备CPC的7-ACA。

公开(公告)号：US20070134926A1

公开(公告)日：2007-06-14

申请号：US11635223

申请日：2006-12-07

Applicant: O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

Inventor： O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

IPC: H01L21/302

CPC classification number: H01L21/30621 ,  H01S5/183 ,  H01S5/2081

Abstract: Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.

Abstract translation: 提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。 根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4， 和H 2 N以蚀刻堆叠结构，从而形成VCSEL的镜层。 第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。 使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

公开(公告)号：US07183151B2

公开(公告)日：2007-02-27

申请号：US10919416

申请日：2004-08-17

Applicant: Mi Ran Park

Inventor： Mi Ran Park

IPC: H01L21/336

CPC classification number: H01L29/66462 ,  H01L21/0331 ,  H01L21/28 ,  H01L21/32051 ,  H01L29/2003

Abstract: Provided is a method for fabricating a filed effect transistor, the method comprising: depositing a first semiconductor layer and a second semiconductor layer on a substrate in sequence, which have a different bandgap from each other, and patterning the second semiconductor layer to have a mesa structure; forming a first resist pattern to expose the second semiconductor layer of a region where source and drain are to be formed; depositing a metal on a whole upper surface, and forming metallic source and drain by performing a lift-off process; performing heat treatment to form an ohmic contact between the source and the second semiconductor layer, and between the drain and the semiconductor layer; forming an insulating layer on the whole upper surface including the source and the drain, and forming a second photoresist pattern to expose the insulating layer at a portion where a gate is to be formed; exposing the second semiconductor layer at the portion where the gate is to be formed by etching the exposed portion of the insulating layer; and depositing the metal on the whole upper surface in a state that the temperature of the substrate is lowered to perform low temperature vacuum deposition, and forming a metallic gate by performing a lift-off process and an insulating layer removing process.

Abstract translation: 提供了一种制造场效应晶体管的方法，所述方法包括：依次在基板上沉积第一半导体层和第二半导体层，所述第一半导体层和第二半导体层彼此具有不同的带隙，并且将第二半导体层图案化以具有台面 结构体; 形成第一抗蚀剂图案以暴露要形成源极和漏极的区域的第二半导体层; 在整个上表面上沉积金属，并通过执行剥离工艺形成金属源和漏极; 进行热处理以在源极和第二半导体层之间以及在漏极和半导体层之间形成欧姆接触; 在包括所述源极和漏极的整个上表面上形成绝缘层，并且形成第二光致抗蚀剂图案以在要形成栅极的部分处暴露所述绝缘层; 通过蚀刻绝缘层的暴露部分，在要形成栅极的部分暴露第二半导体层; 并且在基板的温度降低以进行低温真空沉积的状态下将金属沉积在整个上表面上，并且通过执行剥离处理和绝缘层去除工艺来形成金属栅极。

公开(公告)号：US07776752B2

公开(公告)日：2010-08-17

申请号：US11635223

申请日：2006-12-07

Applicant: O Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

Inventor： O Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

IPC: H01L21/302

CPC classification number: H01L21/30621 ,  H01S5/183 ,  H01S5/2081

Abstract: Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.

Abstract translation: 提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。 根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4和H 2组成的混合物的等离子体中，以蚀刻层叠结构，使得 形成VCSEL。 第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。 使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

公开(公告)号：US08338868B2

公开(公告)日：2012-12-25

申请号：US12626343

申请日：2009-11-25

Applicant: Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

Inventor： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Abstract translation: 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

公开(公告)号：US07804875B2

公开(公告)日：2010-09-28

申请号：US11635938

申请日：2006-12-08

Applicant: Mi Ran Park ,  O Kyun Kwon

Inventor： Mi Ran Park ,  O Kyun Kwon

IPC: H01S5/026 ,  H01S5/183

CPC classification number: H01S5/02296 ,  H01S5/0264 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3095

Abstract: Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate. The predetermined distance is set so that light emitted by the VCSEL can be detected by the MPD.

Abstract translation: 提供了垂直腔表面发射激光器（VCSEL）模块，其提供VCSEL和监视光电二极管（MPD）之间的精确对准，用于有效地检测由VCSEL发射的光以及制造VCSEL模块的方法。 VCSEL模块包括：第一半导体层，第一半导体导电层，有源层，隧道结层和顺序地形成在具有第一和第二区域的衬底的第一区域上的第二半导体导电层; 设置在所述第一区域中的所述第二半导体导电层的一部分上的MPD; 以及VCSEL，其包括在第一区域中具有与第一镜像层，第一半导体层，有源层，隧道结层和第二半导体导电层相同形状的层，以及形成在第一区域的一部分上的第二镜层 第二半导体导电层，并顺序地形成在基板的第二区域上。 设定预定距离，使得能够通过MPD检测由VCSEL发出的光。

公开(公告)号：US20100133590A1

公开(公告)日：2010-06-03

申请号：US12626343

申请日：2009-11-25

Applicant: Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

Inventor： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/14

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Abstract translation: 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

公开(公告)号：US20070133642A1

公开(公告)日：2007-06-14

申请号：US11635938

申请日：2006-12-08

Applicant: Mi Ran Park ,  O Kyun Kwon

Inventor： Mi Ran Park ,  O Kyun Kwon

IPC: H01S5/00

CPC classification number: H01S5/02296 ,  H01S5/0264 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3095

Abstract: Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate. The predetermined distance is set so that light emitted by the VCSEL can be detected by the MPD.

Abstract translation: 提供了垂直腔表面发射激光器（VCSEL）模块，其提供VCSEL和监视光电二极管（MPD）之间的精确对准，用于有效地检测由VCSEL发射的光以及制造VCSEL模块的方法。 VCSEL模块包括：第一半导体层，第一半导体导电层，有源层，隧道结层和顺序地形成在具有第一和第二区域的衬底的第一区域上的第二半导体导电层; 设置在所述第一区域中的所述第二半导体导电层的一部分上的MPD; 以及VCSEL，其包括在第一区域中具有与第一镜像层，第一半导体层，有源层，隧道结层和第二半导体导电层相同形状的层，以及形成在第一区域的一部分上的第二镜层 第二半导体导电层，并顺序地形成在基板的第二区域上。 设定预定距离，使得能够通过MPD检测由VCSEL发出的光。

公开(公告)号：US20060126694A1

公开(公告)日：2006-06-15

申请号：US11179954

申请日：2005-07-12

Applicant: O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Jong Hee Kim ,  Hyun Woo Song

Inventor： O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Jong Hee Kim ,  Hyun Woo Song

IPC: H01S5/00

CPC classification number: H01S5/18316 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18377

Abstract: Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.

Abstract translation: 提供了一种在半导体光学器件中制造垂直腔表面发射激光器的方法，包括：将介质镜层结合到具有镜层和有源层的外延结构; 使用金属键合方法将它们结合在新的基板上; 去除现有的基板; 并在新基板上制造垂直腔表面发射激光器。 垂直腔表面发射激光器的制造方法是通过使用外部金属接合方法将垂直空腔表面发射激光器移动并附着到新的衬底而进行的，而不会电和影响上镜和下反射镜以及构成垂直腔的表面发射激光的有源层 腔表面发射激光。 在使用制造垂直腔表面发射激光器的现有方法的同时，通过移动到具有良好热特性的新衬底来制造VCSEL，从而实现良好的发热特性，从而有助于制造具有高可靠性的垂直腔表面发射激光器 和良好的特点。