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    Metrology through use of feed forward feed sideways and measurement cell re-use
    1.
    发明授权
    Metrology through use of feed forward feed sideways and measurement cell re-use 有权
    通过使用前馈饲料进行横向计量和测量细胞再利用

    公开(公告)号：US08930156B2

    公开(公告)日：2015-01-06

    申请号：US12502112

    申请日：2009-07-13

    申请人： Michael Adel ,  Leonid Poslavsky ,  John Fielden ,  John Madsen ,  Robert Peters

    发明人： Michael Adel ,  Leonid Poslavsky ,  John Fielden ,  John Madsen ,  Robert Peters

    IPC分类号： G06F19/00 ,  H01L21/66

    CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

    摘要翻译： 可以在半导体器件制造期间通过以下步骤来实现计量：a）对形成在部分制造的器件的层中的第一测试单元上的第一测量进行建模; b）对所述层中的第二测试单元执行第二测量; c）将第二测量中的信息馈送到第一测量的建模中; 并且在包括第一和第二测试单元的层上形成光刻图案之后，d）分别使用来自a）和b）的信息对第一和第二测试单元上的第三和第四测量进行建模。

    METROLOGY THROUGH USE OF FEED FORWARD FEED SIDEWAYS AND MEASUREMENT CELL RE-USE
    2.
    发明申请
    METROLOGY THROUGH USE OF FEED FORWARD FEED SIDEWAYS AND MEASUREMENT CELL RE-USE 有权
    通过使用饲料前进饲料的方法和测量细胞再次使用

    公开(公告)号：US20100017005A1

    公开(公告)日：2010-01-21

    申请号：US12502112

    申请日：2009-07-13

    申请人： Michael Adel ,  Leonid Poslavsky ,  John Fielden ,  John Madsen ,  Robert Peters

    发明人： Michael Adel ,  Leonid Poslavsky ,  John Fielden ,  John Madsen ,  Robert Peters

    IPC分类号： G06F19/00 ,  H01L21/66 ,  H01L23/58

    CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

    摘要翻译： 可以在半导体器件制造期间通过以下步骤来实现计量：a）对形成在部分制造的器件的层中的第一测试单元上的第一测量进行建模; b）对所述层中的第二测试单元执行第二测量; c）将第二测量中的信息馈送到第一测量的建模中; 并且在包括第一和第二测试单元的层上形成光刻图案之后，d）分别使用来自a）和b）的信息对第一和第二测试单元上的第三和第四测量进行建模。

    Bright and dark field scatterometry systems for line roughness metrology
    3.
    发明授权
    Bright and dark field scatterometry systems for line roughness metrology 有权
    用于线粗糙度计量的明暗场景散射系统

    公开(公告)号：US08045179B1

    公开(公告)日：2011-10-25

    申请号：US12275078

    申请日：2008-11-20

    申请人： Guorong Vera Zhuang ,  Steven R. Spielman ,  Leonid Poslavsky ,  Daniel C. Wack ,  John Fielden

    发明人： Guorong Vera Zhuang ,  Steven R. Spielman ,  Leonid Poslavsky ,  Daniel C. Wack ,  John Fielden

    IPC分类号： G01B11/30

    CPC分类号： G01B11/303 ,  G01B2210/56

    摘要： Line edge roughness or line width roughness of a feature on a sample may be determined from incident radiation scattered from the feature. An amount of ordered scattered radiation characterized by a discrete diffraction order is determined and a diffuse scattered radiation signal is measured. A ratio between an intensity of the ordered scattered incident radiation and an intensity of the diffuse scattered radiation signal is determined. The line edge roughness or line width roughness is determined from the ratio.

    摘要翻译： 样品上特征的线边缘粗糙度或线宽粗糙度可以从从特征散射的入射辐射来确定。 确定以离散衍射级为特征的有序散射辐射量，并测量漫散射辐射信号。 确定有序散射入射辐射的强度与漫散射辐射信号的强度之间的比率。 线边缘粗糙度或线宽粗糙度由该比率确定。