公开(公告)号：US20080220617A1

公开(公告)日：2008-09-11

申请号：US11716058

申请日：2007-03-07

申请人： Michael D. Turner ,  Suresh Venkatesan ,  Kurt H. Junker

发明人： Michael D. Turner ,  Suresh Venkatesan ,  Kurt H. Junker

IPC分类号： H01L21/31

CPC分类号： H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7846 ,  H01L29/78654

摘要： A method for imparting stress to the channel region of a transistor is provided. In accordance with the method, a semiconductor layer (307) is provided which has a dielectric layer (305) disposed beneath it. A trench (319) is created which extends through the semiconductor layer and into the dielectric layer, and the trench is backfilled with a stressor material (320), thereby forming a trench isolation structure. A channel region (326) is defined in the semiconductor layer adjacent to the trench isolation structure.

摘要翻译： 提供了向晶体管的沟道区域施加应力的方法。 根据该方法，提供半导体层（307），其具有设置在其下方的电介质层（305）。 产生一个延伸穿过半导体层并进入电介质层的沟槽（319），沟槽用应力源材料（320）回填，从而形成沟槽隔离结构。 在与沟槽隔离结构相邻的半导体层中限定沟道区（326）。

公开(公告)号：US07678665B2

公开(公告)日：2010-03-16

申请号：US11716058

申请日：2007-03-07

申请人： Michael D. Turner ,  Suresh Venkatesan ,  Kurt H. Junker

发明人： Michael D. Turner ,  Suresh Venkatesan ,  Kurt H. Junker

IPC分类号： H01L21/76 ,  H01L29/06

CPC分类号： H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7846 ,  H01L29/78654

摘要： A method for imparting stress to the channel region of a transistor is provided. In accordance with the method, a semiconductor layer (307) is provided which has a dielectric layer (305) disposed beneath it. A trench (319) is created which extends through the semiconductor layer and into the dielectric layer, and the trench is backfilled with a stressor material (320), thereby forming a trench isolation structure. A channel region (326) is defined in the semiconductor layer adjacent to the trench isolation structure.

摘要翻译： 提供了向晶体管的沟道区域施加应力的方法。 根据该方法，提供半导体层（307），其具有设置在其下方的电介质层（305）。 产生一个延伸穿过半导体层并进入电介质层的沟槽（319），沟槽用应力源材料（320）回填，从而形成沟槽隔离结构。 在与沟槽隔离结构相邻的半导体层中限定沟道区（326）。

公开(公告)号：US20140299935A1

公开(公告)日：2014-10-09

申请号：US14308816

申请日：2014-06-19

申请人： Konstantin V. Loiko ,  Toni D. Van Gompel ,  Rode R. Mora ,  Michael D. Turner ,  Brian A. Winstead ,  Mark D. Hall

发明人： Konstantin V. Loiko ,  Toni D. Van Gompel ,  Rode R. Mora ,  Michael D. Turner ,  Brian A. Winstead ,  Mark D. Hall

IPC分类号： H01L27/12 ,  H01L29/78 ,  H01L29/161 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L27/1203 ,  H01L21/823807 ,  H01L21/823864 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66477 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7846

摘要： A method for making a semiconductor device is provided which includes (a) providing a layer stack comprising a semiconductor layer (211) and a dielectric layer (209) disposed between the substrate and the semiconductor layer, (b) creating a trench (210) which extends through the semiconductor layer and which exposes a portion of the dielectric layer, the trench having a sidewall, (c) creating a spacer structure (221) which comprises a first material and which is adjacent to the sidewall of the trench, and (d) forming a stressor layer (223) which comprises a second material and which is disposed on the bottom of the trench.

摘要翻译： 提供一种制造半导体器件的方法，其包括（a）提供包括半导体层（211）和设置在所述衬底和所述半导体层之间的电介质层（209）的层堆叠，（b）产生沟槽（210） 其延伸穿过所述半导体层并且暴露所述电介质层的一部分，所述沟槽具有侧壁，（c）产生包括第一材料并且邻近所述沟槽的侧壁的间隔结构（221）和（ d）形成包含第二材料并且设置在沟槽底部的应力层（223）。

公开(公告)号：US07670895B2

公开(公告)日：2010-03-02

申请号：US11409633

申请日：2006-04-24

申请人： Toni D. Van Gompel ,  Peter J. Beckage ,  Mohamad M. Jahanbani ,  Michael D. Turner

发明人： Toni D. Van Gompel ,  Peter J. Beckage ,  Mohamad M. Jahanbani ,  Michael D. Turner

IPC分类号： H01L21/8238

CPC分类号： H01L21/84 ,  H01L21/76283 ,  H01L21/823481 ,  H01L27/1203 ,  H01L29/78

摘要： A process of forming an electronic device can include patterning a semiconductor layer to define an opening. After patterning the semiconductor layer, the opening can have a bottom, and the semiconductor layer can have a sidewall and a surface. The surface is spaced apart from the bottom of the opening. The sidewall can extend from the surface towards the bottom of the opening. The process can also include forming a layer over the semiconductor layer and within the opening, and removing a part of the first layer from within the opening. After removing the part of the layer, a remaining portion of the layer may lie within the opening and adjacent to the bottom and the sidewall, and the remaining portion of the layer may be spaced apart from the surface. In another aspect, the electronic device can include a field isolation region including the first layer.

摘要翻译： 形成电子器件的工艺可以包括图案化半导体层以限定开口。 在图案化半导体层之后，开口可以具有底部，并且半导体层可以具有侧壁和表面。 表面与开口的底部间隔开。 侧壁可以从开口的表面向底部延伸。 该工艺还可以包括在半导体层之上和在开口内形成层，以及从开口内去除第一层的一部分。 在去除层的一部分之后，层的剩余部分可以位于开口内并且邻近底部和侧壁，并且层的剩余部分可以与表面间隔开。 在另一方面，电子设备可以包括包括第一层的场隔离区域。

公开(公告)号：US07634032B2

公开(公告)日：2009-12-15

申请号：US10793295

申请日：2004-03-04

申请人： Fred Chu ,  Michael D. Turner

发明人： Fred Chu ,  Michael D. Turner

IPC分类号： H04L1/00

CPC分类号： H04L1/0045

摘要： A system for detecting non-linear distortion comprises an error detector and logic. The error detector is configured to estimate signal errors associated with signals communicated across a telecommunication line. The logic is configured to track the signal errors and to detect whether the signals are subject to non-linear distortion based on a history of the signal errors.

摘要翻译： 用于检测非线性失真的系统包括误差检测器和逻辑。 误差检测器被配置为估计与通过电信线路传送的信号相关联的信号误差。 该逻辑被配置为跟踪信号错误并且基于信号错误的历史来检测信号是否受到非线性失真。

公开(公告)号：US07593494B1

公开(公告)日：2009-09-22

申请号：US10948492

申请日：2004-09-23

申请人： Ayman Ghobrial ,  Michael D. Turner ,  Daniel M. Joffe

发明人： Ayman Ghobrial ,  Michael D. Turner ,  Daniel M. Joffe

IPC分类号： H04B1/10

CPC分类号： H04B3/30

摘要： A system for canceling impulse noise comprises an adaptive impulse canceler and a combiner. The adaptive impulse canceler is configured to receive a common mode component of a received signal and to detect a noise impulse in the common mode component. The impulse canceler is further configured to provide, based on the noise impulse in the common mode component, an impulse noise estimation for a differential mode component of the received signal. The combiner is configured to receive the differential mode component and the impulse noise estimation and to subtract the impulse noise estimation from the differential mode component.

摘要翻译： 用于消除脉冲噪声的系统包括自适应脉冲消除器和组合器。 自适应脉冲消除器被配置为接收接收信号的共模分量并且检测共模分量中的噪声脉冲。 脉冲消除器还被配置为基于共模分量中的噪声脉冲提供用于接收信号的差模分量的脉冲噪声估计。 组合器被配置为接收差分模式分量和脉冲噪声估计，并从差分模式分量中减去脉冲噪声估计。

公开(公告)号：US20080242094A1

公开(公告)日：2008-10-02

申请号：US11694264

申请日：2007-03-30

申请人： Vishal P. Trivedi ,  Dharmesh Jawarani ,  Michael D. Turner

发明人： Vishal P. Trivedi ,  Dharmesh Jawarani ,  Michael D. Turner

IPC分类号： H01L21/00

CPC分类号： H01L21/31111 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/7833 ,  H01L29/7843

摘要： A method for making a semiconductor structure (10) includes providing a wafer with a structure (16) having a sidewall, forming a sidewall spacer (22) adjacent to the sidewall, and forming a layer of material (28) over the wafer including over the sidewall spacer and over the structure having the sidewall. The method further includes etching the layer, wherein the etching (i) leaves at least portions of the sidewall spacer exposed and (ii) leaves a portion of the layer located over the structure having a sidewall. The portion of the layer located over the structure having a sidewall is reduced in thickness by the etching. Subsequent to etching the layer, the method includes removing the sidewall spacer.

摘要翻译： 制造半导体结构（10）的方法包括：提供具有侧壁的结构（16）的晶片，形成与侧壁相邻的侧壁间隔物（22），并且在晶片上方形成一层材料（28） 侧壁间隔件和具有侧壁的结构上。 所述方法还包括蚀刻所述层，其中所述蚀刻（i）使所述侧壁间隔物的至少一部分暴露，并且（ii）离开位于具有侧壁的结构上方的层的一部分。 位于具有侧壁的结构上方的层的部分通过蚀刻而减小厚度。 在蚀刻该层之后，该方法包括去除侧壁间隔物。

公开(公告)号：US07125390B2

公开(公告)日：2006-10-24

申请号：US10654560

申请日：2003-09-03

申请人： Roman S. Ferber ,  Charles Huang ,  John E. Nemazi ,  Michael D. Turner

发明人： Roman S. Ferber ,  Charles Huang ,  John E. Nemazi ,  Michael D. Turner

IPC分类号： A61H23/02

CPC分类号： A61H23/0263 ,  A61H7/001

摘要： The present invention discloses a hand-held body massager having a transverse housing with a massage region. A massage unit is oriented within the housing for parting a massage effect from the massage region. A pair of elongate arms are each pivotally connected to opposed ends of the housing with the massage region oriented therebetween. Each arm includes a handle to be grasped by a user so that the user may urge the massage region against a target surface of the user's body.

摘要翻译： 本发明公开了一种具有按摩区域的横向壳体的手持式身体按摩器。 按摩单元定位在外壳内，用于分离按摩区域的按摩效果。 一对细长的臂各自枢转地连接到壳体的相对的端部，按摩区域定向在其间。 每个臂包括由使用者抓握的手柄，使得使用者可以将按摩区域推向使用者身体的目标表面。

公开(公告)号：US06996230B1

公开(公告)日：2006-02-07

申请号：US10460968

申请日：2003-06-13

申请人： Fred T. Chu ,  Michael D. Turner ,  Ayman K. Ghobrial

发明人： Fred T. Chu ,  Michael D. Turner ,  Ayman K. Ghobrial

IPC分类号： H04B3/23

CPC分类号： H04B3/23

摘要： An echo canceler for a fractionally spaced telecommunication receiver employs a signal estimator, which generates a fractionally spaced representation of a received information signal that has been subjected to Tomlinson preceding. The output of the signal estimator is differentially combined with fractionally spaced outputs of the echo canceller, so as to effectively remove the contribution of the received information signal from the echo cancellation update operation. As a result, the echo update signal will consist primarily of the residual echo and the noise from the wireline/loop. The error signal can be used at the fractional spacing rate to update all of the echo canceler coefficients, largely without interference from the much larger received information signal. This allows a higher echo canceler gain than that currently incorporated into HDSL2 echo canceler updates.

摘要翻译： 用于分数间隔的电信接收机的回波消除器采用信号估计器，其产生已经经受Tomlinson预编码的接收信息信号的分数间隔表示。 信号估计器的输出与回波消除器的分数间隔的输出差分地组合，以便有效地消除所接收的信息信号对回波消除更新操作的贡献。 结果，回波更新信号将主要由剩余回声和来自有线/回路的噪声组成。 可以以分数间隔速率使用误差信号来更新所有回波消除器系数，而不受来自较大接收信息信号的干扰。 这允许比当前并入HDSL2回波消除器更新中更高的回波消除器增益。

公开(公告)号：US06681203B1

公开(公告)日：2004-01-20

申请号：US09257950

申请日：1999-02-26

申请人： James P. Seymour ,  Michael D. Turner

发明人： James P. Seymour ,  Michael D. Turner

IPC分类号： G01L1912

CPC分类号： H04L1/0046 ,  G10L19/18 ,  H04L1/0061 ,  H04L1/007 ,  H04L1/201

摘要： A method of insuring the accuracy of transmitted or stored digital data involves the use of a cyclical redundancy check (CRC) code. The method is particularly useful for ensuring the accuracy of frames transmitted between multi-mode vocoders. The method allows a different CRC code to be used for each mode of a transmitting multi-mode vocoder. A receiving multi-mode vocoder checks the CRC code against the CRC coding formulas of the various modes. If the CRC code is satisfied under any one of the modes, the frame is labeled as “good”. If the CRC code fails under all the modes, the frame is labeled as “bad”. If the bit frame includes bits for indicating the mode of the transmitting multi-mode vocoder, the receiving multi-mode vocoder checks the CRC code against the CRC coding formula for the indicated mode only. If the CRC code passes for the indicated mode, the frame is labeled as “good”, otherwise, the frame is labeled as “bad”.

摘要翻译： 确保发送或存储的数字数据的准确性的方法涉及使用循环冗余校验（CRC）码。 该方法对于确保在多模式声码器之间传输的帧的精度特别有用。 该方法允许将不同的CRC码用于发送多模式声码器的每个模式。 接收多模式声码器根据各种模式的CRC编码公式检查CRC码。 如果在任何一种模式下满足CRC码，则将该帧标记为“良好”。 如果CRC码在所有模式下都失败，则该帧被标记为“坏”。 如果比特帧包括用于指示发送多模式声码器的模式的比特，则接收多模式声码器仅针对所指示的模式根据CRC编码公式检查CRC码。 如果CRC码通过指示模式，则将该帧标记为“良好”，否则将该帧标记为“不良”。