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1.发明授权System and method for wafer alignment which mitigates effects of reticle rotation and magnification on overlay 有权用于晶片对准的系统和方法，其减轻掩模旋转和放大对覆盖物的影响公开(公告)号：US06269322B1
公开(公告)日：2001-07-31
申请号：US09266361
申请日：1999-03-11
IPC分类号： G03B2742
CPC分类号： G03F9/70
摘要： The present invention relates to wafer alignment. A reticle is employed which includes, a design and first and second alignment marks. The second alignment mark is symmetric to the first alignment mark such that a reticle center point is a midpoint of the first and second alignment marks. The first alignment mark is printed on a surface layer of the wafer. The second alignment mark is printed on the surface layer at an offset from the first alignment mark. A virtual alignment mark is determined, the virtual alignment mark being a midpoint of the printed first and second alignment marks. The virtual alignment mark is employed to facilitate aligning the wafer. The symmetric relationship between the first and second alignment mark results in the negation of print errors of the marks due to reticle rotation and/or lens magnification with respect to the virtual alignment mark. The employment of the virtual alignment mark in wafer alignment substantially facilitates mitigation of overlay error.
摘要翻译： 本发明涉及晶圆对准。 使用掩模版，其包括设计和第一和第二对准标记。 第二对准标记与第一对准标记对称，使得标线片中心点是第一和第二对准标记的中点。 将第一对准标记印刷在晶片的表面层上。 第二对准标记以与第一对准标记偏移的方式印刷在表面层上。 确定虚拟对准标记，虚拟对准标记是打印的第一和第二对准标记的中点。 采用虚拟对准标记以便于对准晶片。 第一和第二对准标记之间的对称关系导致相对于虚拟对准标记由于标线旋转和/或透镜放大而导致的标记的打印错误的否定。 在晶片对准中使用虚拟对准标记基本上有助于减轻重叠误差。
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公开(公告)号：US06534243B1
公开(公告)日：2003-03-18
申请号：US10000493
申请日：2001-10-23
申请人： Michael K. Templeton , Ramkumar Subramanian , Bharath Rangarajan , Kathleen R. Early , Ursula Q. Quinto
发明人： Michael K. Templeton , Ramkumar Subramanian , Bharath Rangarajan , Kathleen R. Early , Ursula Q. Quinto
IPC分类号： G03F7039
CPC分类号： G03F7/405 , G03F7/0035 , G03F7/40
摘要： In one embodiment, the present invention relates to a method of treating a patterned resist involving providing the patterned resist having a first number of structural features, the patterned resist comprising an acid catalyzed polymer; contacting a coating containing a coating material, at least one basic compound, a photoacid generator, and a dye with the patterned resist; irradiating the coated patterned resist; permitting a deprotection region to form within an inner portion of the patterned resist; and removing the coating and the deprotection region to provide a second number of patterned resist structural features, wherein the first number is smaller than the second number.
摘要翻译： 在一个实施方案中，本发明涉及一种处理图案化抗蚀剂的方法，包括提供具有第一数目的结构特征的图案化抗蚀剂，所述图案化抗蚀剂包含酸催化聚合物; 使含有涂层材料的涂层，至少一种碱性化合物，光致酸发生剂和染料与图案化的抗蚀剂接触; 照射经涂覆的图案化抗蚀剂; 允许在图案化抗蚀剂的内部部分内形成去保护区; 并且去除涂层和去保护区域以提供第二数量的图案化抗蚀剂结构特征，其中第一数目小于第二数量。
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公开(公告)号：US06197455B1
公开(公告)日：2001-03-06
申请号：US09231679
申请日：1999-01-14
申请人： Sanjay K. Yedur , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Kathleen R. Early
发明人： Sanjay K. Yedur , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Kathleen R. Early
IPC分类号： G03F900
CPC分类号： G03F1/74 , Y10S977/856 , Y10S977/859
摘要： A method of repairing defects in a photomask used in the formation of a semiconductor wafer includes the use of a scanning tunneling microscope. The scanning tunneling microscope includes a very sharp tip having a diameter on the order of 100 Å or less. In order to remove excess material from a mask layer in the photomask, the tip is placed into contact with those regions having such excess material and the tip is used to scrape the excess material away. In order to add material to voids in a mask layer of the photomask, the tip is placed in proximity to those areas in need of the excess material and caused to deposit such material upon, for example, application of a bias voltage to the tip.
摘要翻译： 修复用于形成半导体晶片的光掩模中的缺陷的方法包括使用扫描隧道显微镜。 扫描隧道显微镜包括具有大约等于或小于100埃的直径的非常锋利的尖端。 为了从光掩模中的掩模层去除多余的材料，将尖端放置成与具有这种多余材料的那些区域接触，并且尖端用于刮除多余的材料。 为了向光掩模的掩模层中的空隙添加材料，将尖端放置在需要多余材料的那些区域附近，并且使得将这种材料沉积在例如向尖端施加偏置电压。
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4.发明授权Growing copper vias or lines within a patterned resist using a copper seed layer 有权使用铜种子层在图案化抗蚀剂中生长铜通孔或线公开(公告)号：US06905950B2
公开(公告)日：2005-06-14
申请号：US09893198
申请日：2001-06-27
IPC分类号： H01L21/768 , H01L21/3205
CPC分类号： H01L21/76885 , H01L21/76879
摘要： The present invention involves a method for fabricating interconnecting lines and vias. According to the invention, copper is grown within the openings in a patterned coating. The patterned coating can be a resist coating or a dielectric coating. Either type of coating can be formed over a copper seed layer, whereby the seed layer is exposed within the pattern gaps. The copper seed layer can also be provided within the pattern gaps after patterning. Copper features are grown within the pattern gaps by plating. Where the patterned coating is a resist, the resist is stripped leaving the copper features in the inverse pattern image. The copper features can be coated with a diffusion barrier layer and a dielectric. The dielectric is polished to leave the dielectric filling the spaces between copper features. The invention provides copper lines and vias without the need for a dielectric or metal etching step. Another benefit of the invention is that lines widths can be increased by trimming the patterned coating prior to growing the copper features.
摘要翻译： 本发明涉及制造互连线和通孔的方法。 根据本发明，铜在图案化涂层的开口内生长。 图案化的涂层可以是抗蚀剂涂层或介电涂层。 任何一种类型的涂层可以在铜籽晶层上形成，从而种子层在图案间隙内露出。 图案化之后也可以在图案间隙内提供铜籽晶层。 铜特征通过电镀在图案间隙内生长。 在图案涂层是抗蚀剂的情况下，剥离抗蚀剂，留下逆向图案图案中的铜特征。 铜的特征可以涂覆有扩散阻挡层和电介质。 电介质被抛光以留下电介质填充铜特征之间的空间。 本发明提供铜线和通孔，而不需要电介质或金属蚀刻步骤。 本发明的另一个好处是通过在生长铜特征之前修整图案化涂层可以增加线宽。
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5.发明授权公开(公告)号：US06879051B1
公开(公告)日：2005-04-12
申请号：US10050454
申请日：2002-01-16
CPC分类号： C23C16/045 , C23C16/52
摘要： One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.
摘要翻译： 本发明的一个方面涉及一种促进在衬底中形成的沟槽的侧壁表面上形成种子层部分的方法。 该方法包括以下步骤：在与沟槽共形设置的阻挡层上形成保形种子层，其中沟槽形成在衬底中; 在种子层侧壁部分反射x射线辐射的光束; 基于所述光束的反射部分生成测量信号; 以及当在所述沟槽上形成所述侧壁部分时，基于所述测量信号来确定所述侧壁部分的厚度。
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公开(公告)号：US06704101B1
公开(公告)日：2004-03-09
申请号：US10050423
申请日：2002-01-16
IPC分类号： G01N2100
CPC分类号： G01N21/47 , G01N21/4788 , G01N21/55 , G01N21/9501 , G01N2201/10
摘要： A system and method are disclosed for monitoring characteristics of a substrate. A substrate is supported for movement within a processing environment and an incident light beam is emitted onto a surface of the substrate. The incident beam is provided to a moveable reflector that directs the beam to the substrate. A control system controls movement of the reflector so as to selectively interrogates the substrate with the beam.
摘要翻译： 公开了用于监测基板的特性的系统和方法。 支撑衬底在处理环境中移动，并且将入射光束发射到衬底的表面上。 入射光束被提供到将光束引导到衬底的可移动反射器。 控制系统控制反射器的运动，以便选择性地用光束询问衬底。
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公开(公告)号：US06663723B1
公开(公告)日：2003-12-16
申请号：US09974276
申请日：2001-10-10
IPC分类号： B08B500
摘要： One aspect of the present invention relates to a method of cleaning a patterned photoresist clad structure involving the steps of contacting the patterned photoresist clad structure with an alcohol vapor comprising at least one compound having the Formula ROH, wherein R is a hydrocarbon group comprising from 4 to about 8 carbon atoms; condensing the alcohol vapor on the patterned photoresist clad structure; and removing the condensed alcohol vapor from the patterned photoresist clad structure. Another aspect of the present invention involves the use of an alcohol vapor having a boiling point from about 102° C. to about 175° C. Yet another aspect of the present invention involves the use of an alcohol vapor having a flash point from about 15° C. to about 80° C.
摘要翻译： 本发明的一个方面涉及一种清洁图案化光致抗蚀剂包覆结构的方法，该方法包括以下步骤：使图案化的光致抗蚀剂包覆结构与包含至少一种具有式ROH的化合物的醇蒸气接触，其中R是包含4 至约8个碳原子; 在图案化的光致抗蚀剂包层结构上冷凝酒精蒸气; 并从图案化的光致抗蚀剂包覆结构去除冷凝的醇蒸气。 本发明的另一方面涉及使用沸点为约102℃至约175℃的醇蒸气。本发明的另一方面涉及使用闪点为约15℃的醇蒸汽 ℃至约80℃
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8.发明授权Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith 有权散射技术来确定特征的不对称轮廓，并产生与之相关联的反馈或前馈过程控制数据公开(公告)号：US06650422B2
公开(公告)日：2003-11-18
申请号：US09817820
申请日：2001-03-26
IPC分类号： G01B1100
CPC分类号： G01B11/30 , G01B11/24 , G01B11/26 , G01N21/211 , G01N21/4738 , G01N21/9501
摘要： The present invention is directed to a method and a system for non-destructively, efficiently and accurately detecting asymmetry in the profile of a feature formed on a wafer during the process of semiconductor fabrication. The method encompasses directing a beam of light or radiation at a feature and detecting a reflected beam associated therewith. Data associated with the reflected beam is correlated with data associated with known feature profiles to ascertain profile characteristics associated with the feature of interest. Using the profile characteristics, an asymmetry of the feature is determined which is then used to generate feedback or feedforward process control data to compensate for or correct such asymmetry in subsequent processing.
摘要翻译： 本发明涉及一种用于在半导体制造过程中非破坏性地，有效地和准确地检测在晶片上形成的特征的轮廓的不对称性的方法和系统。 该方法包括在特征处引导光束或辐射，并且检测与其相关联的反射光束。 与反射光束相关联的数据与与已知特征轮廓相关联的数据相关联，以确定与感兴趣特征相关联的轮廓特征。 使用简档特征，确定特征的不对称性，然后将其用于产生反馈或前馈过程控制数据，以补偿或纠正随后处理中的这种不对称性。
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公开(公告)号：US06645702B1
公开(公告)日：2003-11-11
申请号：US10050438
申请日：2002-01-16
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： The present invention relates to systems and methods for increasing the hydrophobicity of patterned resists. In one embodiment, the present invention relates to a method of processing an ultra-thin resist, involving depositing the ultra-thin photoresist over a semiconductor substrate; irradiating the ultra-thin resist with electromagnetic radiation; developing the ultra-thin resist with a developer to form a patterned resist, the patterned resist having a surface with a first hydrophobicity; contacting the patterned resist with a transition solvent to provide the surface of the patterned resist with a second hydrophobicity, wherein the second hydrophobicity is greater than the first hydrophobicity and contact of the patterned resist with the transition is conducted between developing the ultra-thin resist and rinsing patterned resist; and rinsing the patterned resist having the second hydrophobicity with an aqueous solution.
摘要翻译： 本发明涉及增加图案化抗蚀剂疏水性的系统和方法。 在一个实施例中，本发明涉及一种处理超薄抗蚀剂的方法，包括在半导体衬底上沉积超薄光致抗蚀剂; 用电磁辐射照射超薄抗蚀剂; 用显影剂显影超薄抗蚀剂以形成图案化抗蚀剂，图案化抗蚀剂具有第一疏水性表面; 使图案化的抗蚀剂与过渡溶剂接触以提供具有第二疏水性的图案化抗蚀剂的表面，其中第二疏水性大于第一疏水性，并且图案化的抗蚀剂与转变的接触在显影超薄抗蚀剂和 冲洗图案抗蚀剂; 并用水溶液冲洗具有第二疏水性的图案化抗蚀剂。
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公开(公告)号：US06634805B1
公开(公告)日：2003-10-21
申请号：US09974340
申请日：2001-10-10
申请人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
发明人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
IPC分类号： G03B500
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided for applying a developer to a photoresist material wafer disposed on a semiconductor substrate. The developer system and method employ a developer plate having a plurality of a apertures for dispensing developer. Preferably, the developer plate has a bottom surface with a shape that is similar to the wafer. The developer plate is disposed above the wafer and substantially and/or completely surrounds the top surface of the wafer during application of the developer. A small gap is formed between the wafer and the bottom surface of the developer plate. The wafer and the developer plate form a parallel plate pair, such that the gap can be made small enough so that the developer fluid quickly fills the gap. The developer plate is disposed in very close proximity with respect to the wafer, such that the developer is squeezed between the two plates thereby spreading evenly the developer over the wafer.
摘要翻译： 提供了一种将显影剂施加到设置在半导体衬底上的光致抗蚀剂材料晶片的系统和方法。 显影剂系统和方法采用具有多个用于分配显影剂的孔的显影剂板。 优选地，显影剂板具有与晶片类似的形状的底表面。 显影剂板设置在晶片上方并且在施加显影剂的过程中基本上和/或完全地包围晶片的顶表面。 在晶片和显影剂板的底表面之间形成小的间隙。 晶片和显影剂板形成平行板对，使得间隙可以制得足够小，使得显影剂流体快速填充间隙。 显影剂板相对于晶片非常接近地设置，使得显影剂被挤压在两个板之间，从而将显影剂均匀地铺展在晶片上。
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