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公开(公告)号：US08138041B2
公开(公告)日：2012-03-20
申请号：US12137745
申请日：2008-06-12
IPC分类号： H01L21/203
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/324 , H01L29/517
摘要： Structure and method of improving the performance of metal gate devices by depositing an in-situ silicon (Si) cap are disclosed. A wafer including a substrate and a dielectric layer is heated through a degas process, and then cooled to approximately room temperature. A metal layer is then deposited, and then an in-situ Si cap is deposited thereon. The Si cap is deposited without vacuum break, i.e., in the same mainframe or in the same chamber, as the heating, cooling and metal deposition processes. As such, the amount of oxygen available for interlayer oxide regrowth during subsequent processing is reduced as well as the amount oxygen trapped in the metal gate.
摘要翻译： 公开了通过沉积原位硅（Si）帽来改善金属栅极器件的性能的结构和方法。 将包括基板和电介质层的晶片通过脱气加热，然后冷却至约室温。 然后沉积金属层，然后在其上沉积原位Si盖。 在加热，冷却和金属沉积过程中，Si盖被沉积成没有真空断裂，即在相同的主框架或相同的室中。 因此，在随后的处理期间可用于层间氧化物再生长的氧气量以及金属栅极中捕获的氧量减少。
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公开(公告)号：US20090308636A1
公开(公告)日：2009-12-17
申请号：US12137745
申请日：2008-06-12
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/324 , H01L29/517
摘要： Structure and method of improving the performance of metal gate devices by depositing an in-situ silicon (Si) cap are disclosed. A wafer including a substrate and a dielectric layer is heated through a degas process, and then cooled to approximately room temperature. A metal layer is then deposited, and then an in-situ Si cap is deposited thereon. The Si cap is deposited without vacuum break, i.e., in the same mainframe or in the same chamber, as the heating, cooling and metal deposition processes. As such, the amount of oxygen available for interlayer oxide regrowth during subsequent processing is reduced as well as the amount oxygen trapped in the metal gate.
摘要翻译： 公开了通过沉积原位硅（Si）帽来改善金属栅极器件的性能的结构和方法。 将包括基板和电介质层的晶片通过脱气加热，然后冷却至约室温。 然后沉积金属层，然后在其上沉积原位Si盖。 在加热，冷却和金属沉积过程中，Si盖被沉积成没有真空断裂，即在相同的主框架或相同的室中。 因此，在随后的处理期间可用于层间氧化物再生长的氧气量以及金属栅极中捕获的氧量减少。
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公开(公告)号：US07569416B2
公开(公告)日：2009-08-04
申请号：US11424655
申请日：2006-06-16
申请人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
发明人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0021 , H01L51/0595 , Y10S977/858 , Y10S977/891 , Y10T428/26
摘要： The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.
摘要翻译： 本发明提供一种制造该装置的装置和方法。 该装置包括具有平坦表面的基底和位于平坦表面上的第一和第二电极。 第一电极具有顶表面和侧表面，并且侧表面具有与基底接近或接触的边缘。 电极绝缘层位于顶表面上，并且位于侧表面上的自组装层。 第二电极与自组装层和电极绝缘层接触。
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公开(公告)号：US20050014357A1
公开(公告)日：2005-01-20
申请号：US10803244
申请日：2004-03-18
申请人： Zhenan Bao , Jie Zheng , James Sturm , Troy Graves-Abe
发明人： Zhenan Bao , Jie Zheng , James Sturm , Troy Graves-Abe
IPC分类号： H01L51/40 , H01L21/336 , H01L21/44 , H01L21/4763
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0021 , H01L51/0595 , Y10S977/858 , Y10S977/891 , Y10T428/26
摘要： The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.
摘要翻译： 本发明提供一种制造该装置的装置和方法。 该装置包括具有平坦表面的基底和位于平坦表面上的第一和第二电极。 第一电极具有顶表面和侧表面，并且侧表面具有与基底接近或接触的边缘。 电极绝缘层位于顶表面上，并且位于侧表面上的自组装层。 第二电极与自组装层和电极绝缘层接触。
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公开(公告)号：US20070069243A1
公开(公告)日：2007-03-29
申请号：US11424655
申请日：2006-06-16
申请人： Zhenan Bao , Jie Zheng , James Sturm , Troy Graves-Abe
发明人： Zhenan Bao , Jie Zheng , James Sturm , Troy Graves-Abe
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0021 , H01L51/0595 , Y10S977/858 , Y10S977/891 , Y10T428/26
摘要： The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.
摘要翻译： 本发明提供一种制造该装置的装置和方法。 该装置包括具有平坦表面的基底和位于平坦表面上的第一和第二电极。 第一电极具有顶表面和侧表面，并且侧表面具有与基底接近或接触的边缘。 电极绝缘层位于顶表面上，并且位于侧表面上的自组装层。 第二电极与自组装层和电极绝缘层接触。
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公开(公告)号：US07119356B2
公开(公告)日：2006-10-10
申请号：US10803244
申请日：2004-03-18
申请人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
发明人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
IPC分类号： H01L29/06
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0021 , H01L51/0595 , Y10S977/858 , Y10S977/891 , Y10T428/26
摘要： The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.
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