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公开(公告)号：US07285775B2
公开(公告)日：2007-10-23
申请号：US10904883
申请日：2004-12-02
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译： 光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。 该层被照射，这导致光电子的发射。 在接收到或不存在光电子发射时，检测到图案化端点。
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公开(公告)号：US20080078743A1
公开(公告)日：2008-04-03
申请号：US11536388
申请日：2006-09-28
CPC分类号： H01L21/67248 , H01L21/02057
摘要： A temperature-controlled substrate holder having a high temperature substrate chuck is mounted within a chemical treatment chamber. The temperature-controlled substrate holder secures a substrate and maintains the substrate at a temperature that ranges from about 10° C. up to about 150° C. during execution of a chemical oxide removal process.
摘要翻译： 具有高温基板卡盘的温度控制的基板保持器安装在化学处理室内。 温度控制的衬底保持器固定衬底并且在执行化学氧化物去除过程期间将衬底维持在约10℃至约150℃的温度。
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公开(公告)号：US07278300B2
公开(公告)日：2007-10-09
申请号：US11162958
申请日：2005-09-29
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译： 描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。 调节气体的流速以在中空末端的端部形成并维持静止气泡。 静态气泡的形成被光学验证。 气体控制歧管允许容易地切换进入探针尖端的气体。 被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。 本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。 此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。
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公开(公告)号：US07256399B2
公开(公告)日：2007-08-14
申请号：US10907591
申请日：2005-04-07
IPC分类号： G01N23/227
CPC分类号： G01N23/2273
摘要： A non-destructive in-situ elemental profiling of a layer in a set of layers method and system are disclosed. In one embodiment, a first emission of a plurality of photoelectrons is caused from the layer to be elementally profiled. An elemental profile of the layer is determined based on the emission. In another embodiment, a second emission of a plurality of photoelectrons is also received from the layer, and an elemental profile is determined by comparison of the resulting signals. A process that is altering the layer can then be controlled “on-the-fly” to obtain a desired material composition. Since the method can be employed in-situ and is non-destructive, it reduces turn around time and lowers wafer consumption. The invention also records the composition of all processed wafers, hence, removing the conventional statistical sampling problem.
摘要翻译： 公开了一组层中的层的非破坏性原位元素分析方法和系统。 在一个实施例中，多个光电子的第一次发射是从该层进行元素分析。 基于发射确定层的元素分布。 在另一个实施例中，也从该层接收多个光电子的第二次发射，并且通过比较所得到的信号来确定元素分布。 然后可以“即时”控制改变层的方法以获得所需的材料组成。 由于该方法可以原位使用并且是非破坏性的，所以可以减少周转时间并降低晶片消耗。 本发明还记录了所有加工晶片的组成，因此，去除了常规统计抽样问题。
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5.发明授权公开(公告)号：US08008209B2
公开(公告)日：2011-08-30
申请号：US11877965
申请日：2007-10-24
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , C23F3/00
CPC分类号： H01L21/31116 , H01L21/67069 , H01L21/67248 , Y10S438/978
摘要： A technique is described whereby temperature gradients are created within a semiconductor wafer. Temperature sensitive etching and/or deposition processes are then employed. These temperature sensitive processes proceed at different rates in regions with different temperatures. To reduce pinch off in etching processes, a temperature sensitive etch process is selected and a temperature gradient is created between the surface and subsurface of a wafer such that the etching process proceeds more slowly at the surface than deeper in the wafer. This reduces “crusting” of solid reaction products at trench openings, thereby eliminating pinch off in many cases. Similar temperature-sensitive deposition processes can be employed to produce void-free high aspect ratio conductors and trench fills.
摘要翻译： 描述了在半导体晶片内产生温度梯度的技术。 然后采用温度敏感的蚀刻和/或沉积工艺。 这些温度敏感过程在不同温度的区域中以不同的速率进行。 为了减少蚀刻过程中的夹断，选择温度敏感的蚀刻工艺，并且在晶片的表面和次表面之间产生温度梯度，使得蚀刻工艺在表面上比在晶片更深地进行得更慢。 这减少了沟槽开口处的固体反应产物的“结壳”，从而在许多情况下消除了夹断。 可以使用类似的温度敏感的沉积工艺来产生无空隙的高纵横比导体和沟槽填充物。
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6.发明申请公开(公告)号：US20090107956A1
公开(公告)日：2009-04-30
申请号：US11877965
申请日：2007-10-24
CPC分类号： H01L21/31116 , H01L21/67069 , H01L21/67248 , Y10S438/978
摘要： A technique is described whereby temperature gradients are created within a semiconductor wafer. Temperature sensitive etching and/or deposition processes are then employed. These temperature sensitive processes proceed at different rates in regions with different temperatures. To reduce pinch off in etching processes, a temperature sensitive etch process is selected and a temperature gradient is created between the surface and subsurface of a wafer such that the etching process proceeds more slowly at the surface than deeper in the wafer. This reduces “crusting” of solid reaction products at trench openings, thereby eliminating pinch off in many cases. Similar temperature-sensitive deposition processes can be employed to produce void-free high aspect ratio conductors and trench fills.
摘要翻译： 描述了在半导体晶片内产生温度梯度的技术。 然后采用温度敏感的蚀刻和/或沉积工艺。 这些温度敏感过程在不同温度的区域中以不同的速率进行。 为了减少蚀刻过程中的夹断，选择温度敏感的蚀刻工艺，并且在晶片的表面和次表面之间产生温度梯度，使得蚀刻工艺在表面上比在晶片更深地进行得更慢。 这减少了沟槽开口处的固体反应产物的“结壳”，从而在许多情况下消除了夹断。 可以使用类似的温度敏感的沉积工艺来产生无空隙的高纵横比导体和沟槽填充物。
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公开(公告)号：US20120260774A1
公开(公告)日：2012-10-18
申请号：US13388142
申请日：2011-04-18
申请人： Michael R. Sievers
发明人： Michael R. Sievers
CPC分类号： C22B58/00 , C22B7/001 , C22B30/04 , Y02P10/214
摘要： Extracting gallium and/or arsenic from materials comprising gallium arsenide is generally disclosed. In some example embodiments, a material comprising gallium arsenide may be exposed to a first heating condition to form a first exhaust. The first exhaust may be directed to an arsenic collection bed including aluminum, which may form aluminum arsenide. The material including gallium arsenide may be exposed to a second heating condition and/or a vacuum may be applied, which may form a second exhaust. The second exhaust may be directed to a gallium collection bed including aluminum, which may form gallium alloys of aluminum.
摘要翻译： 通常公开了从包含砷化镓的材料中提取镓和/或砷。 在一些示例性实施例中，包含砷化镓的材料可以暴露于第一加热条件以形成第一排气。 第一排气可以被引导到包括铝的砷收集床，其可以形成砷化铝。 包括砷化镓的材料可以暴露于第二加热条件和/或可以施加真空，其可以形成第二排气。 第二排气可以被引导到包括铝的镓收集床，其可以形成铝的镓合金。
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公开(公告)号：US07119333B2
公开(公告)日：2006-10-10
申请号：US10904438
申请日：2004-11-10
IPC分类号： G01N23/225 , H01J37/00
CPC分类号： H01J37/244 , H01J2237/2448 , H01J2237/3174
摘要： Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.
摘要翻译： 通过使用其中转换电极将入射离子转换成多个次级电子乘以乘法因子的乘法系统来提高通过离子束从样品散射的弱离子电流的检测，二次电子被吸引到电子 检测器通过适当的偏差。 在一个版本中，检测器是两级系统，其中二次电子撞击发射在诸如光电倍增管或CCD的光子检测器中检测到的光子的闪烁体。
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公开(公告)号：US20080233709A1
公开(公告)日：2008-09-25
申请号：US11689884
申请日：2007-03-22
IPC分类号： H01L21/762 , H01L21/311
CPC分类号： H01L21/31111 , H01L21/31116 , H01L21/76224 , H01L21/76229
摘要： A method for removing a material from a trench in a semiconductor. The method includes placing the semiconductor in a vacuum chamber, admitting a reactant into the chamber at a pressure to form a film of the reactant on a surface of the material, controlling the composition and residence time of the film on the surface of the material to etch at least a portion of the material, and removing any unwanted reactant and reaction product from the chamber or the surface of the material.
摘要翻译： 一种用于从半导体中的沟槽中去除材料的方法。 该方法包括将半导体放置在真空室中，在反应物的压力下将反应物导入到腔室中以在材料的表面上形成反应物的膜，从而控制膜在材料表面上的组成和停留时间 蚀刻材料的至少一部分，并从室或材料表面去除任何不需要的反应物和反应产物。
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公开(公告)号：US06843893B2
公开(公告)日：2005-01-18
申请号：US10317679
申请日：2002-12-12
IPC分类号： C10B1/00 , C23F4/00 , H01B13/00 , H01L21/302 , H01L21/3213
CPC分类号： H01L21/32134 , C23F4/00
摘要： A method and structure for an apparatus for removing metal from an integrated circuit structure is disclosed. A container holds an integrated circuit structure that has a metal portion. An electronic device connected to the container produces an electronic field proximate to a limited region of the metal portion. A first supply connected to the container supplies an oxidizing agent within the container. A solvent supply connected to the container supplies solvent to the limited region of the metal portion.
摘要翻译： 公开了一种用于从集成电路结构中去除金属的装置的方法和结构。 容器保持具有金属部分的集成电路结构。 连接到容器的电子设备产生靠近金属部分的有限区域的电子场。 连接到容器的第一供应源在容器内提供氧化剂。 连接到容器的溶剂供应源将溶剂供应到金属部分的有限区域。
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