公开(公告)号：US20240071441A1

公开(公告)日：2024-02-29

申请号：US17899417

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Abhilash Ramamurthy Nag ,  Suresh Reddy Yarragunta ,  Shiva Pahwa

IPC: G11C7/10 ,  G06N20/00 ,  G11C29/52

CPC classification number: G11C7/1096 ,  G06N20/00 ,  G11C7/1093 ,  G11C29/52

Abstract: Exemplary methods, apparatuses, and systems include an environmental operations manager for controlling memory access of the memory device. The environmental operations manager receives a set of data bits for programming to a memory location. The environmental operations manager receives environmental condition data. The environmental operations manager delays programming of the set of data bits to the memory location and writing the set of data bits to a buffer location in response to determining that the environmental condition data satisfies a threshold.

公开(公告)号：US20230185471A1

公开(公告)日：2023-06-15

申请号：US17884478

申请日：2022-08-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shiva Pahwa ,  Abhilash Ramamurthy Nag ,  Sathyashankara Bhat Muguli

IPC: G06F3/06

CPC classification number: G06F3/0644 ,  G06F3/0653 ,  G06F3/0604 ,  G06F3/0679

Abstract: Respective temperature values for a plurality of dies of a memory device is obtained. Each respective temperature value is indicative of a temperature at a corresponding die of the plurality of dies of the memory device. The plurality of dies based on the respective temperature values, each die of the plurality of dies is ordered. A zone creation command directed to the memory device is received from a host. The zone creation command on the memory device on a die of the ordered plurality of dies is performed based on a temperature threshold.

公开(公告)号：US20240411470A1

公开(公告)日：2024-12-12

申请号：US18811203

申请日：2024-08-21

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shiva Pahwa ,  Abhilash Ramamurthy Nag ,  Sathyashankara Bhat Muguli

IPC: G06F3/06

Abstract: Respective temperature values for a plurality of dies of a memory device is obtained. Each respective temperature value is indicative of a temperature at a corresponding die of the plurality of dies of the memory device. The plurality of dies based on the respective temperature values, each die of the plurality of dies is ordered. A zone creation command directed to the memory device is received from a host. The zone creation command on the memory device on a die of the ordered plurality of dies is performed based on a temperature threshold.

公开(公告)号：US12099737B2

公开(公告)日：2024-09-24

申请号：US17884478

申请日：2022-08-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shiva Pahwa ,  Abhilash Ramamurthy Nag ,  Sathyashankara Bhat Muguli

IPC: G06F3/06

CPC classification number: G06F3/0644 ,  G06F3/0604 ,  G06F3/0653 ,  G06F3/0679

Abstract: Respective temperature values for a plurality of dies of a memory device is obtained. Each respective temperature value is indicative of a temperature at a corresponding die of the plurality of dies of the memory device. The plurality of dies based on the respective temperature values, each die of the plurality of dies is ordered. A zone creation command directed to the memory device is received from a host. The zone creation command on the memory device on a die of the ordered plurality of dies is performed based on a temperature threshold.

公开(公告)号：US12068055B2

公开(公告)日：2024-08-20

申请号：US17899417

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Abhilash Ramamurthy Nag ,  Suresh Reddy Yarragunta ,  Shiva Pahwa

IPC: G11C7/10 ,  G06F11/30 ,  G06N20/00 ,  G11C29/00 ,  G11C29/52

CPC classification number: G11C7/1096 ,  G06F11/3058 ,  G06N20/00 ,  G11C7/1093 ,  G11C29/00 ,  G11C29/52 ,  G11C2207/2245 ,  G11C2207/229

Abstract: Exemplary methods, apparatuses, and systems include an environmental operations manager for controlling memory access of the memory device. The environmental operations manager receives a set of data bits for programming to a memory location. The environmental operations manager receives environmental condition data. The environmental operations manager delays programming of the set of data bits to the memory location and writing the set of data bits to a buffer location in response to determining that the environmental condition data satisfies a threshold.

公开(公告)号：US20240061487A1

公开(公告)日：2024-02-22

申请号：US18233594

申请日：2023-08-14

Applicant: Micron Technology, Inc.

Inventor： Abhilash Ramamurthy Nag ,  Shiva Pahwa ,  Suresh Reddy Yarragunta

IPC: G06F1/30 ,  G06F1/26 ,  G06F3/06

CPC classification number: G06F1/30 ,  G06F1/263 ,  G06F3/0626 ,  G06F3/0629 ,  G06F3/0679

Abstract: Aspects of the present disclosure configure a memory sub-system processor, to use a thermoelectric generator during a power loss event. The processor delivers power to a set of memory components from a power source. The processor detects a power failure event associated with the power source and, in response to detecting the power failure event, receives holdup power from the thermoelectric generator. The processor delivers the holdup power from the thermoelectric generator to the set of memory components.