公开(公告)号：US09646683B2

公开(公告)日：2017-05-09

申请号：US14803918

申请日：2015-07-20

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Tommaso Vali ,  Giovanni Naso ,  Vishal Sarin ,  William Henry Radke ,  Theodore T. Pekny

IPC: G11C11/34 ,  G11C16/04 ,  G11C11/56 ,  G11C16/34 ,  G11C16/24 ,  G11C16/26

CPC classification number: G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3427 ,  G11C2211/5641

Abstract: Threshold voltages in a charge storage memory are controlled by threshold voltage placement, such as to provide more reliable operation and to reduce the influence of factors such as neighboring charge storage elements and parasitic coupling. Pre-compensation or post-compensation of threshold voltage for neighboring programmed aggressor memory cells reduces the threshold voltage uncertainty in a flash memory system. Using a buffer having a data structure such as a lookup table provides for programmable threshold voltage distributions that enables the distribution of data states in a multi-level cell flash memory to be tailored, such as to provide more reliable operation. Additional apparatus, systems, and methods are provided.

公开(公告)号：US09520183B2

公开(公告)日：2016-12-13

申请号：US14707684

申请日：2015-05-08

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Tommaso Vali ,  Giovanni Naso ,  Vishal Sarin ,  William Henry Radke ,  Theodore T. Pekny

IPC: G11C11/34 ,  G11C16/04 ,  G11C11/56 ,  G11C16/34 ,  G11C16/24 ,  G11C16/26

CPC classification number: G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3427 ,  G11C2211/5641

Abstract: Threshold voltages in a charge storage memory are controlled by threshold voltage placement, such as to provide more reliable operation and to reduce the influence of factors such as neighboring charge storage elements and parasitic coupling. Pre-compensation or post-compensation of threshold voltage for neighboring programmed “aggressor” memory cells reduces the threshold voltage uncertainty in a flash memory system. Using a buffer having a data structure such as a lookup table provides for programmable threshold voltage distributions that enables the distribution of data states in a multi-level cell flash memory to be tailored, such as to provide more reliable operation.

Abstract translation: 电荷存储存储器中的阈值电压由阈值电压放置来控制，例如提供更可靠的操作并减少诸如相邻电荷存储元件和寄生耦合的因素的影响。 相邻编程的“侵略者”存储器单元的阈值电压的预补偿或后补偿降低了闪存系统中的阈值电压不确定性。 使用具有诸如查找表之类的数据结构的缓冲器提供了可编程的阈值电压分布，使得能够定制多级单元闪存中的数据状态的分布，例如提供更可靠的操作。

公开(公告)号：US20150243351A1

公开(公告)日：2015-08-27

申请号：US14707684

申请日：2015-05-08

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Tommaso Vali ,  Giovanni Naso ,  Vishal Sarin ,  William Henry Radke ,  Theodore T. Pekny

IPC: G11C11/56

CPC classification number: G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3427 ,  G11C2211/5641

Abstract: Threshold voltages in a charge storage memory are controlled by threshold voltage placement, such as to provide more reliable operation and to reduce the influence of factors such as neighboring charge storage elements and parasitic coupling. Pre-compensation or post-compensation of threshold voltage for neighboring programmed “aggressor” memory cells reduces the threshold voltage uncertainty in a flash memory system. Using a buffer having a data structure such as a lookup table provides for programmable threshold voltage distributions that enables the distribution of data states in a multi-level cell flash memory to be tailored, such as to provide more reliable operation.

Abstract translation: 电荷存储存储器中的阈值电压由阈值电压放置来控制，例如提供更可靠的操作并减少诸如相邻电荷存储元件和寄生耦合的因素的影响。 相邻编程的“侵略者”存储器单元的阈值电压的预补偿或后补偿降低了闪存系统中的阈值电压不确定性。 使用具有诸如查找表之类的数据结构的缓冲器提供了可编程的阈值电压分布，使得能够定制多级单元闪存中的数据状态的分布，例如提供更可靠的操作。

公开(公告)号：US20150325309A1

公开(公告)日：2015-11-12

申请号：US14803918

申请日：2015-07-20

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Tommaso Vali ,  Giovanni Naso ,  Vishal Sarin ,  William Henry Radke ,  Theodore T. Pekny

IPC: G11C16/34 ,  G11C11/56

CPC classification number: G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3427 ,  G11C2211/5641

Abstract: Threshold voltages in a charge storage memory are controlled by threshold voltage placement, such as to provide more reliable operation and to reduce the influence of factors such as neighboring charge storage elements and parasitic coupling. Pre-compensation or post-compensation of threshold voltage for neighboring programmed aggressor memory cells reduces the threshold voltage uncertainty in a flash memory system. Using a buffer having a data structure such as a lookup table provides for programmable threshold voltage distributions that enables the distribution of data states in a multi-level cell flash memory to be tailored, such as to provide more reliable operation. Additional apparatus, systems, and methods are provided.

Abstract translation: 电荷存储存储器中的阈值电压由阈值电压放置来控制，例如提供更可靠的操作并减少诸如相邻电荷存储元件和寄生耦合的因素的影响。 对于相邻编程的侵略存储器单元的阈值电压的预补偿或后补偿降低了闪存系统中的阈值电压不确定性。 使用具有诸如查找表之类的数据结构的缓冲器提供了可编程的阈值电压分布，使得能够定制多级单元闪存中的数据状态的分布，例如提供更可靠的操作。 提供附加的装置，系统和方法。