公开(公告)号：US09705080B2

公开(公告)日：2017-07-11

申请号：US15182202

申请日：2016-06-14

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Innocenzo Tortorelli ,  Fabio Pellizzer ,  Pietro Petruzza

IPC: H01L21/20 ,  H01L45/00 ,  H01L21/768 ,  H01L27/24

CPC classification number: H01L45/1683 ,  H01L21/76897 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/065 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675

Abstract: Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines.

公开(公告)号：US09343671B2

公开(公告)日：2016-05-17

申请号：US14599636

申请日：2015-01-19

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Giorgio Servalli ,  Pietro Petruzza ,  Cinzia Perrone

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/124 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.

公开(公告)号：US20150200366A1

公开(公告)日：2015-07-16

申请号：US14599636

申请日：2015-01-19

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Giorgio Servalli ,  Pietro Petruzza ,  Cinzia Perrone

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/124 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.

Abstract translation: 具有带有倾斜侧壁的加热器的记忆单元及其形成方法在此描述。 作为示例，形成电阻存储器单元阵列的方法可以包括形成具有相对于垂直平面成角度的第一加热元件的第一电阻式存储单元，形成与第一电阻式存储单元相邻的第二电阻式存储单元，并具有 相对于垂直平面并朝向第一加热器成角度的第二加热器元件，以及形成与第一电阻式存储单元相邻的第三电阻式存储单元，并具有相对于垂直平面成角度且远离第一加热器的第三加热元件 元件。