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    Memory device word line drivers and methods
    3.
    发明授权
    Memory device word line drivers and methods 有权
    内存设备字线驱动程序和方法

    公开(公告)号：US09159392B2

    公开(公告)日：2015-10-13

    申请号：US14254433

    申请日：2014-04-16

    Applicant: Micron Technology, Inc.

    Inventor： Tae Kim ,  Howard C. Kirsch ,  Charles L. Ingalls ,  Shigeki Tomishima ,  K. Shawn Smith

    IPC: G11C5/02 ,  G11C8/08 ,  H01L27/02 ,  H01L27/105 ,  H01L27/108 ,  G11C8/14 ,  H01L27/118

    CPC classification number: G11C8/08 ,  G11C5/025 ,  G11C8/14 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/11898

    Abstract: Memory subsystems and methods, such as those involving a memory cell array formed over a semiconductor material of a first type, such as p-type substrate. In at least one such subsystem, all of the transistors used to selectively access cells within the array are transistors of a second type, such as n-type transistors. Local word line drivers are coupled to respective word lines extending through the array. Each local word line drivers includes at least one transistor. However, all of the transistors in the local word line drivers are of the second type. A well of semiconductor material of the second type, is also formed in the material of the first type, and a plurality of global word line drivers are formed using the well. Other subsystems and methods are disclosed.

    Abstract translation: 存储器子系统和方法，例如涉及形成在第一类型的半导体材料上的存储单元阵列的那些，例如p型衬底。 在至少一个这样的子系统中，用于选择性地访问阵列内的单元的所有晶体管都是第二类型的晶体管，例如n型晶体管。 本地字线驱动器耦合到延伸穿过阵列的相应字线。 每个本地字线驱动器包括至少一个晶体管。 然而，本地字线驱动器中的所有晶体管都是第二类。 第二种类型的半导体材料的阱也形成在第一类型的材料中，并且使用该阱形成多个全局字线驱动器。 公开了其他子系统和方法。

    MEMORY CELLS HAVING A FOLDED DIGIT LINE ARCHITECTURE
    5.
    发明申请
    MEMORY CELLS HAVING A FOLDED DIGIT LINE ARCHITECTURE 审中-公开
    具有折叠数字线路架构的存储单元

    公开(公告)号：US20150014758A1

    公开(公告)日：2015-01-15

    申请号：US14500487

    申请日：2014-09-29

    Applicant: Micron Technology, Inc.

    Inventor： Shigeki Tomishima

    IPC: H01L27/108 ,  H01L29/78

    CPC classification number: H01L27/10826 ,  G11C8/005 ,  H01L21/823431 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/108 ,  H01L27/10808 ,  H01L27/10823 ,  H01L27/10876 ,  H01L29/785

    Abstract: Memory arrays having folded architectures and methods of making the same. Specifically, memory arrays having a portion of the transistors in a row that are reciprocated and shifted with respect to other transistors in the same row. Trenches formed between the rows may form a weave pattern throughout the array, in a direction of the row. Trenches formed between legs of the transistors may also form a weave pattern throughout the array in a direction of the row.

    Abstract translation: 具有折叠结构的存储器阵列及其制造方法。 具体地，存储器阵列具有一行中的晶体管的一部分相对于同一行中的其它晶体管往复运动和移位。 在行之间形成的沟槽可以在整个阵列中沿着行的方向形成编织图案。 在晶体管的支腿之间形成的沟槽也可以在整个阵列中沿行的方向形成编织图案。

    MEMORY DEVICE WORD LINE DRIVERS AND METHODS
    6.
    发明申请
    MEMORY DEVICE WORD LINE DRIVERS AND METHODS 有权
    存储器设备字线驱动器和方法

    公开(公告)号：US20140226427A1

    公开(公告)日：2014-08-14

    申请号：US14254433

    申请日：2014-04-16

    Applicant: Micron Technology, Inc.

    Inventor： Tae Kim ,  Howard C. Kirsch ,  Charles L. Ingalls ,  Shigeki Tomishima ,  K. Shawn Smith

    IPC: G11C8/08

    CPC classification number: G11C8/08 ,  G11C5/025 ,  G11C8/14 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/11898

    Abstract: Memory subsystems and methods, such as those involving a memory cell array formed over a semiconductor material of a first type, such as p-type substrate. In at least one such subsystem, all of the transistors used to selectively access cells within the array are transistors of a second type, such as n-type transistors. Local word line drivers are coupled to respective word lines extending through the array. Each local word line drivers includes at least one transistor. However, all of the transistors in the local word line drivers are of the second type. A well of semiconductor material of the second type, is also formed in the material of the first type, and a plurality of global word line drivers are formed using the well. Other subsystems and methods are disclosed.

    Abstract translation: 存储器子系统和方法，例如涉及形成在第一类型的半导体材料上的存储单元阵列的那些，例如p型衬底。 在至少一个这样的子系统中，用于选择性地访问阵列内的单元的所有晶体管都是第二类型的晶体管，例如n型晶体管。 本地字线驱动器耦合到延伸穿过阵列的相应字线。 每个局部字线驱动器包括至少一个晶体管。 然而，本地字线驱动器中的所有晶体管都是第二类。 第二种类型的半导体材料的阱也形成在第一类型的材料中，并且使用该阱形成多个全局字线驱动器。 公开了其他子系统和方法。

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