公开(公告)号：US08767467B2

公开(公告)日：2014-07-01

申请号：US13970055

申请日：2013-08-19

Applicant: Micron Technology, Inc.

Inventor： Krishna K. Parat ,  Akira Goda ,  Koichi Kawal ,  Brian J. Soderling ,  Jeremy Binfet ,  Arnaud A. Furnemont ,  Tejas Krishnamohan ,  Tyson M. Stichka ,  Giuseppina Puzzilli

IPC: G11C16/04

CPC classification number: G11C29/765 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/349 ,  G11C29/789

Abstract: Memory devices and methods are disclosed, including a method involving erasing a block of memory cells. After erasing the block, and before subsequent programming of the block, a number of bad strings in the block are determined based on charge accumulation on select gate transistors. The block is retired from use if the number of bad strings exceeds a threshold. Additional embodiments are disclosed.

Abstract translation: 公开了存储器件和方法，包括涉及擦除存储器单元块的方法。 在擦除块之后，并且在块的后续编程之前，基于选择栅晶体管上的电荷积累来确定块中的多个不良串。 如果坏字符串的数量超过阈值，则该块将从使用中退出。 公开了另外的实施例。

公开(公告)号：US10741224B2

公开(公告)日：2020-08-11

申请号：US16518651

申请日：2019-07-22

Applicant: Micron Technology, Inc.

Inventor： Tyson M. Stichka ,  Preston Allen Thomson ,  Scott Anthony Stoller ,  Christopher Bueb ,  Jianmin Huang ,  Kulachet Tanpairoj ,  Harish Reddy Singidi

IPC: G11C16/06 ,  G11C5/00 ,  G11C16/26 ,  G11C16/04 ,  G11C7/04 ,  G11C16/34 ,  G11C7/10 ,  G11C11/56 ,  G11C16/10

Abstract: Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.

公开(公告)号：US20200058327A1

公开(公告)日：2020-02-20

申请号：US16518651

申请日：2019-07-22

Applicant: Micron Technology, Inc.

Inventor： Tyson M. Stichka ,  Preston Allen Thomson ,  Scott Anthony Stoller ,  Christopher Bueb ,  Jianmin Huang ,  Kulachet Tanpairoj ,  Harish Reddy Singidi

IPC: G11C5/00 ,  G11C7/04 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C7/10

Abstract: Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.

公开(公告)号：US10360947B2

公开(公告)日：2019-07-23

申请号：US15692508

申请日：2017-08-31

Applicant: Micron Technology, Inc.

Inventor： Tyson M. Stichka ,  Preston Thomson ,  Scott Anthony Stoller ,  Christopher Bueb ,  Jianmin Huang ,  Kulachet Tanpairoj ,  Harish Singidi

IPC: G11C16/06 ,  G11C5/00 ,  G11C16/26 ,  G11C16/04 ,  G11C7/04

Abstract: Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.

公开(公告)号：US20130332769A1

公开(公告)日：2013-12-12

申请号：US13970055

申请日：2013-08-19

Applicant: Micron Technology, Inc.

Inventor： Krishna K. Parat ,  Akira Goda ,  Koichi Kawai ,  Brian J. Soderling ,  Jeremy Binfet ,  Arnaud A. Furnemont ,  Tejas Krishnamohan ,  Tyson M. Stichka ,  Giuseppina Puzzilli

IPC: G11C29/00

CPC classification number: G11C29/765 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/349 ,  G11C29/789

Abstract: Memory devices and methods are disclosed, including a method involving erasing a block of memory cells. After erasing the block, and before subsequent programming of the block, a number of bad strings in the block are determined based on charge accumulation on select gate transistors. The block is retired from use if the number of bad strings exceeds a threshold. Additional embodiments are disclosed.

Abstract translation: 公开了存储器件和方法，包括涉及擦除存储器单元块的方法。 在擦除块之后，并且在块的后续编程之前，基于选择栅晶体管上的电荷积累来确定块中的多个不良串。 如果坏字符串的数量超过阈值，则该块将从使用中退出。 公开了另外的实施例。