公开(公告)号：US06975497B2

公开(公告)日：2005-12-13

申请号：US09769519

申请日：2001-01-26

申请人： Mie Nagao ,  Ryusuke Ushikoshi ,  Masashi Ohno

发明人： Mie Nagao ,  Ryusuke Ushikoshi ,  Masashi Ohno

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/027 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

CPC分类号： G03F7/70691 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

摘要： A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.

摘要翻译： 一种用于从静电卡盘减少颗粒的方法，具有以下步骤：将晶片设置在静电卡盘的吸附面上，通过向静电卡盘施加电压而将晶片吸引到吸引面上，释放由于差异引起的应力 在晶片温度达到饱和温度之前，通过相对于吸引面滑动晶片，使晶片和静电卡盘之间的热膨胀，并将晶片的温度从比吸引面的温度降低到饱和温度。

公开(公告)号：US06252758B1

公开(公告)日：2001-06-26

申请号：US09346305

申请日：1999-07-02

申请人： Mie Nagao ,  Ryusuke Ushikoshi ,  Masashi Ohno

发明人： Mie Nagao ,  Ryusuke Ushikoshi ,  Masashi Ohno

IPC分类号： H01L2168

CPC分类号： G03F7/70691 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

摘要： A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.

摘要翻译： 一种用于从静电卡盘减少颗粒的方法，具有以下步骤：将晶片设置在静电卡盘的吸附面上，通过向静电卡盘施加电压而将晶片吸引到吸引面上，释放由于差异引起的应力 在晶片温度达到饱和温度之前，通过相对于吸引面滑动晶片，使晶片和静电卡盘之间的热膨胀，并将晶片的温度从比吸引面的温度降低到饱和温度。

公开(公告)号：US6134096A

公开(公告)日：2000-10-17

申请号：US317772

申请日：1999-05-18

申请人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

发明人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01G23/00

CPC分类号： G03F7/707 ,  G03F7/70708 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for attracting an object for treatment. The electrostatic chuck includes a substrate, an insulating dielectric layer and at least one electrode located between the substrate and the insulating dielectric layer. The object is attracted onto the electrode via the insulating dielectric layer. The insulating dielectric layer is between 0.5 mm and 5.0 mm thick, and utilizes a gas-introducing hole to form a gas-diffusing depression on the side of an attractive surface, allowing for more uniform heat conduction. The gas-diffusing depression is between 100 um and 5.0 mm deep. The distance between the bottom surface of the gas-diffusing depression and an electrode may range from 500 .mu.m to 5 mm.

摘要翻译： 用于吸引物体进行治疗的静电卡盘。 静电卡盘包括基板，绝缘电介质层和位于基板和绝缘介电层之间的至少一个电极。 物体经由绝缘介电层吸引到电极上。 绝缘介电层的厚度在0.5mm至5.0mm之间，利用气体导入孔在吸引面侧形成气体扩散凹部，能够进行更均匀的导热。 气体扩散凹陷深度在100μm到5.0mm之间。 气体扩散凹陷的底表面和电极之间的距离可以在500μm至5mm的范围内。

公开(公告)号：US5946183A

公开(公告)日：1999-08-31

申请号：US705988

申请日：1996-08-30

申请人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

发明人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： G03F7/707 ,  G03F7/70708 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for attracting an object to be treated, includes a substrate, an insulating dielectric layer and at least one electrode provided between the substrate and the insulating dielectric layer, wherein the above object is to be attracted onto the electrode via the insulating dielectric layer and an average thickness of the insulating dielectric layer is not less than 0.5 mm and not more than 5.0 mm.

摘要翻译： 用于吸引待处理物体的静电卡盘包括基板，绝缘介电层和设置在基板和绝缘介电层之间的至少一个电极，其中上述目的经由绝缘介电层被吸引到电极上 并且绝缘介电层的平均厚度不小于0.5mm且不大于5.0mm。

公开(公告)号：US06549392B1

公开(公告)日：2003-04-15

申请号：US09332990

申请日：1999-06-15

申请人： Masashi Ohno ,  Mie Nagao ,  Hiromichi Kobayashi

发明人： Masashi Ohno ,  Mie Nagao ,  Hiromichi Kobayashi

IPC分类号： H01G2300

CPC分类号： H01L21/67115 ,  H01L21/67109 ,  H01L21/6831

摘要： A method for reducing particles from an electrostatic chuck, wherein the difference between a wafer temperature before absorbing and a wafer maximum temperature after absorbing is 50° C. or below when the wafer is absorbed onto the electrostatic chuck.

摘要翻译： 一种用于从静电卡盘减少颗粒的方法，其中当晶片被吸收到静电卡盘上时，吸收之前的晶片温度和吸收之后的晶片最大温度之间的差为50℃或更低。

公开(公告)号：US08743777B2

公开(公告)日：2014-06-03

申请号：US12640857

申请日：2009-12-17

申请人： Masashi Ohno ,  Masami Oshima ,  Hirotomo Yasuoka ,  Yasunari Izawa

发明人： Masashi Ohno ,  Masami Oshima ,  Hirotomo Yasuoka ,  Yasunari Izawa

IPC分类号： H04W4/00 ,  H04J3/16

CPC分类号： H04W36/02

摘要： In a wireless communication system including a wireless terminal, a plurality of wireless base stations that wirelessly communicate with the wireless terminal, and a controller that changes the path used for communication with the wireless terminal from a first path via a first wireless base station to a second path via a second wireless base station, the controller monitors the amount of remaining data to the wireless terminal at the first wireless base station, controls to the timing to change to the second path according to the monitor result.

摘要翻译： 在包括无线终端的无线通信系统中，与无线终端进行无线通信的多个无线基站，以及控制器，其将用于与无线终端通信的路径从第一路径经由第一无线基站改变为 通过第二无线基站的第二路径，控制器监视第一无线基站处的无线终端的剩余数据量，根据监视结果控制到第二路径的定时。

公开(公告)号：US6166432A

公开(公告)日：2000-12-26

申请号：US34021

申请日：1998-03-02

申请人： Masashi Ohno ,  Naohito Yamada ,  Takahiro Inoue ,  Kouji Kato

发明人： Masashi Ohno ,  Naohito Yamada ,  Takahiro Inoue ,  Kouji Kato

IPC分类号： H01L21/683 ,  H02N13/00 ,  H01L23/053 ,  H01L23/12

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： A wafer attracting apparatus includes a substrate made of a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein the attracting surface is constituted by a ductile worked surface, the ductile worked surface has concave portions, a diameter of each of the concave portions is 0.1 .mu.m or less, and when the wafer is attracted onto the attracting surface of the substrate and released therefrom, the number of particles attaching to that wafer is 9.3 or less per 1 cm.sup.2.

摘要翻译： 晶片吸引装置包括由陶瓷材料制成并适于将晶片吸引并保持在其吸引表面上的衬底，其中吸引表面由延性加工表面构成，延性加工表面具有凹部，每个的直径 的凹部的面积为0.1μm以下，并且当晶片被吸引到基板的吸引面上并从基板上吸引后，附着于该晶片的粒子数为每1cm3 9.3以下。

公开(公告)号：US5144622A

公开(公告)日：1992-09-01

申请号：US593762

申请日：1990-10-05

申请人： Yoshihiro Takiyasu ,  Toshiki Tanaka ,  Michio Asano ,  Masashi Ohno ,  Takahiko Kozaki

发明人： Yoshihiro Takiyasu ,  Toshiki Tanaka ,  Michio Asano ,  Masashi Ohno ,  Takahiko Kozaki

IPC分类号： H04L12/46 ,  H04L12/56

CPC分类号： H04L45/742 ,  H04L12/4604 ,  H04L45/34

摘要： In a network system having a plurality of LANs each connecting a plurality of terminals interconnected, a LAN interconnection switching unit for switching and relaying data receives data frames from LANs and sends out a call set-up frame including a call number assigned to a combination of source and destination terminal addresses and addresses of relaying interconnection switching units. The data received from LAN is segmented into packets, which are sent out together with the call number. The interconnection switching unit switches and relays data by using data frame error detection scheme in the LAN. Information for controlling a switching sequence is added to the data frame from the LAN to prevent the interruption by the packet having a different call number.

摘要翻译： 在具有互连的多个LAN的多个LAN的网络系统中，用于切换和中继数据的LAN互连切换单元从LAN接收数据帧，并发出包括分配给组合的呼叫号码的呼叫建立帧 中继互连交换单元的源和目的终端地址和地址。 从LAN接收的数据被分割成与呼叫号码一起发送的分组。 互连交换单元通过使用LAN中的数据帧错误检测方案来切换和中继数据。 用于控制切换序列的信息从LAN被添加到数据帧，以防止具有不同呼叫号码的分组的中断。

公开(公告)号：US08718016B2

公开(公告)日：2014-05-06

申请号：US13486052

申请日：2012-06-01

申请人： Yasunari Izawa ,  Masashi Ohno

发明人： Yasunari Izawa ,  Masashi Ohno

IPC分类号： H04W4/00 ,  H04W36/02 ,  H04W40/36

CPC分类号： H04W36/02 ,  H04W36/0005 ,  H04W40/36

摘要： A mobile communication system includes a plurality of base stations, an upper node, and a mobile station. In this mobile communication system, while a first base station that is currently connected via radio to the mobile station is receiving a first downlink signal from a second base station that was previously connected via radio to the mobile station and that received the first downlink signal from the upper node for transmission to the mobile station, when the mobile station is connected via radio to a third base station as a result of a handover, the first base station sends a redirection request signal requesting the second base station to redirect the first downlink signal to the third base station. Then, in response to the redirection request signal, the second base station redirects the first downlink signal to the third base station.

摘要翻译： 移动通信系统包括多个基站，上层节点和移动台。 在该移动通信系统中，当通过无线电连接到移动台的第一基站正在从先前通过无线电连接到移动台的第二基站接收第一下行链路信号，并从第二基站接收到来自 用于传输到移动站的上层节点，当移动台作为切换的结果通过无线电连接到第三基站时，第一基站发送请求第二基站的重定向请求信号以重定向第一下行链路信号 到第三个基站。 然后，响应于重定向请求信号，第二基站将第一下行链路信号重定向到第三基站。

公开(公告)号：US06292346B1

公开(公告)日：2001-09-18

申请号：US09357395

申请日：1999-07-20

申请人： Masashi Ohno ,  Hirokazu Ichikawa ,  Naohito Yamada ,  Tetsuya Kawajiri

发明人： Masashi Ohno ,  Hirokazu Ichikawa ,  Naohito Yamada ,  Tetsuya Kawajiri

IPC分类号： H02N1300

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H02N13/00 ,  Y10T29/49002

摘要： A semiconductor wafer-holder having a member for holding the semiconductor wafer with a basic member made of a ceramic nitride, a cooling equipment made of a metal, and an intervened layer between the semiconductor wafer-holding member and the cooling equipment, the intervened layer being composed of a metallic foil or a carbon sheet having a thickness of not more than 500 &mgr;m.

摘要翻译： 一种半导体晶片保持器，其具有用于将半导体晶片保持为具有由陶瓷氮化物制成的基本构件的部件，由金属制成的冷却设备以及在半导体晶片保持构件和冷却设备之间的介入层，所述介入层 由金属箔或厚度不大于500μm的碳片组成。