公开(公告)号：US6134096A

公开(公告)日：2000-10-17

申请号：US317772

申请日：1999-05-18

申请人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

发明人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01G23/00

CPC分类号： G03F7/707 ,  G03F7/70708 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for attracting an object for treatment. The electrostatic chuck includes a substrate, an insulating dielectric layer and at least one electrode located between the substrate and the insulating dielectric layer. The object is attracted onto the electrode via the insulating dielectric layer. The insulating dielectric layer is between 0.5 mm and 5.0 mm thick, and utilizes a gas-introducing hole to form a gas-diffusing depression on the side of an attractive surface, allowing for more uniform heat conduction. The gas-diffusing depression is between 100 um and 5.0 mm deep. The distance between the bottom surface of the gas-diffusing depression and an electrode may range from 500 .mu.m to 5 mm.

摘要翻译： 用于吸引物体进行治疗的静电卡盘。 静电卡盘包括基板，绝缘电介质层和位于基板和绝缘介电层之间的至少一个电极。 物体经由绝缘介电层吸引到电极上。 绝缘介电层的厚度在0.5mm至5.0mm之间，利用气体导入孔在吸引面侧形成气体扩散凹部，能够进行更均匀的导热。 气体扩散凹陷深度在100μm到5.0mm之间。 气体扩散凹陷的底表面和电极之间的距离可以在500μm至5mm的范围内。

公开(公告)号：US5946183A

公开(公告)日：1999-08-31

申请号：US705988

申请日：1996-08-30

申请人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

发明人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： G03F7/707 ,  G03F7/70708 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for attracting an object to be treated, includes a substrate, an insulating dielectric layer and at least one electrode provided between the substrate and the insulating dielectric layer, wherein the above object is to be attracted onto the electrode via the insulating dielectric layer and an average thickness of the insulating dielectric layer is not less than 0.5 mm and not more than 5.0 mm.

摘要翻译： 用于吸引待处理物体的静电卡盘包括基板，绝缘介电层和设置在基板和绝缘介电层之间的至少一个电极，其中上述目的经由绝缘介电层被吸引到电极上 并且绝缘介电层的平均厚度不小于0.5mm且不大于5.0mm。

公开(公告)号：US06432208B1

公开(公告)日：2002-08-13

申请号：US09670580

申请日：2000-09-27

申请人： Satoru Kawakami ,  Katsuhiko Iwabuchi ,  Ryo Kuwajima ,  Ryusuke Ushikoshi ,  Naohito Yamada ,  Tetsuya Kawajiri

发明人： Satoru Kawakami ,  Katsuhiko Iwabuchi ,  Ryo Kuwajima ,  Ryusuke Ushikoshi ,  Naohito Yamada ,  Tetsuya Kawajiri

IPC分类号： C23C1600

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001

摘要： In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.

摘要翻译： 在等离子体处理装置中，提高了待处理基板的温度控制。 在处理室中设置具有大致圆柱形状的陶瓷制的支撑构件。 支撑构件的上端通过固态粘合气密地连接到放置台的后表面。 支撑构件的下端经由下部冷却套和O形环气密地连接到处理室的底部。 在形成在支撑构件内部的气氛室中设置由盘状铝块制成的冷却套。 冷却套通过导热板构件安装到放置台的后表面。

公开(公告)号：US6166432A

公开(公告)日：2000-12-26

申请号：US34021

申请日：1998-03-02

申请人： Masashi Ohno ,  Naohito Yamada ,  Takahiro Inoue ,  Kouji Kato

发明人： Masashi Ohno ,  Naohito Yamada ,  Takahiro Inoue ,  Kouji Kato

IPC分类号： H01L21/683 ,  H02N13/00 ,  H01L23/053 ,  H01L23/12

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： A wafer attracting apparatus includes a substrate made of a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein the attracting surface is constituted by a ductile worked surface, the ductile worked surface has concave portions, a diameter of each of the concave portions is 0.1 .mu.m or less, and when the wafer is attracted onto the attracting surface of the substrate and released therefrom, the number of particles attaching to that wafer is 9.3 or less per 1 cm.sup.2.

摘要翻译： 晶片吸引装置包括由陶瓷材料制成并适于将晶片吸引并保持在其吸引表面上的衬底，其中吸引表面由延性加工表面构成，延性加工表面具有凹部，每个的直径 的凹部的面积为0.1μm以下，并且当晶片被吸引到基板的吸引面上并从基板上吸引后，附着于该晶片的粒子数为每1cm3 9.3以下。

公开(公告)号：US06491571B1

公开(公告)日：2002-12-10

申请号：US09531462

申请日：2000-03-20

申请人： Masashi Ohno ,  Naohito Yamada ,  Takahiro Inoue ,  Kouji Kato

发明人： Masashi Ohno ,  Naohito Yamada ,  Takahiro Inoue ,  Kouji Kato

IPC分类号： B24B722

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： A wafer attracting apparatus includes a substrate made of a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein the attracting surface is constituted by a ductile worked surface, the ductile worked surface has concave portions, a diameter of each of the concave portions is 0.1 &mgr;m or less, and when the wafer is attracted onto the attracting surface of the substrate and released therefrom, the number of particles attaching to that wafer is 9.3 or less per 1 cm2.

摘要翻译： 晶片吸引装置包括由陶瓷材料制成并适于将晶片吸引并保持在其吸引表面上的衬底，其中吸引表面由延性加工表面构成，延性加工表面具有凹部，每个的直径 的凹部的厚度为0.1μm以下，并且当晶片被吸引到基板的吸附面上并被剥离时，附着在该晶片上的粒子的数量为每1cm 3为9.3以下。

公开(公告)号：US06292346B1

公开(公告)日：2001-09-18

申请号：US09357395

申请日：1999-07-20

申请人： Masashi Ohno ,  Hirokazu Ichikawa ,  Naohito Yamada ,  Tetsuya Kawajiri

发明人： Masashi Ohno ,  Hirokazu Ichikawa ,  Naohito Yamada ,  Tetsuya Kawajiri

IPC分类号： H02N1300

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H02N13/00 ,  Y10T29/49002

摘要： A semiconductor wafer-holder having a member for holding the semiconductor wafer with a basic member made of a ceramic nitride, a cooling equipment made of a metal, and an intervened layer between the semiconductor wafer-holding member and the cooling equipment, the intervened layer being composed of a metallic foil or a carbon sheet having a thickness of not more than 500 &mgr;m.

摘要翻译： 一种半导体晶片保持器，其具有用于将半导体晶片保持为具有由陶瓷氮化物制成的基本构件的部件，由金属制成的冷却设备以及在半导体晶片保持构件和冷却设备之间的介入层，所述介入层 由金属箔或厚度不大于500μm的碳片组成。

公开(公告)号：US08231985B2

公开(公告)日：2012-07-31

申请号：US13288288

申请日：2011-11-03

申请人： Yoshimasa Kobayashi ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

发明人： Yoshimasa Kobayashi ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

IPC分类号： B32B9/00

CPC分类号： C04B35/581 ,  C04B35/62815 ,  C04B35/645 ,  C04B37/001 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/445 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/366 ,  H01L21/316 ,  H01L21/318

摘要： The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.

摘要翻译： 根据本发明的氮化铝基复合材料是高纯度的氮化铝基复合材料，其过渡金属，碱金属和硼的含量比分别低至1000ppm或更低，具有 AlN和MgO构成相，并且还含有选自稀土金属氧化物，稀土金属 - 铝复合氧化物，碱土金属 - 铝复合氧化物，稀土金属氟氧化物，氧化钙 和氟化钙，其中导热率在40〜150W / mK的范围内，热膨胀系数在7.3〜8.4ppm /℃的范围内，体积电阻率为1×10 14＆OHgr· 厘米或更高。

公开(公告)号：US20120052326A1

公开(公告)日：2012-03-01

申请号：US13288288

申请日：2011-11-03

申请人： Yoshimasa Kobayashi ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

发明人： Yoshimasa Kobayashi ,  Akira Goto ,  Yuji Katsuda ,  Naohito Yamada

IPC分类号： C04B35/582 ,  B32B18/00 ,  B32B9/04 ,  C04B35/50 ,  C04B35/505

CPC分类号： C04B35/581 ,  C04B35/62815 ,  C04B35/645 ,  C04B37/001 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/445 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/366 ,  H01L21/316 ,  H01L21/318

摘要： The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.

摘要翻译： 根据本发明的氮化铝基复合材料是高纯度的氮化铝基复合材料，其过渡金属，碱金属和硼的含量比分别低至1000ppm或更低，具有 AlN和MgO构成相，并且还含有选自稀土金属氧化物，稀土金属 - 铝复合氧化物，碱土金属 - 铝复合氧化物，稀土金属氟氧化物，氧化钙 和氟化钙，其中导热率在40〜150W / mK的范围内，热膨胀系数在7.3〜8.4ppm /℃的范围内，体积电阻率为1×10 14＆OHgr· 厘米或更高。

公开(公告)号：US07531554B2

公开(公告)日：2009-05-12

申请号：US11133470

申请日：2005-05-20

申请人： Motohide Satoh ,  Takashi Matsuda ,  Satoshi Okuda ,  Hiroshi Kawakami ,  Hisateru Aramaki ,  Hisashi Shinkai ,  Yuji Matsuzaki ,  Wataru Watanabe ,  Kazunobu Yamataka ,  Shinichi Kiyonari ,  Shuichi Wamaki ,  Mitsuru Takahashi ,  Naohito Yamada ,  Akemi Nagao

发明人： Motohide Satoh ,  Takashi Matsuda ,  Satoshi Okuda ,  Hiroshi Kawakami ,  Hisateru Aramaki ,  Hisashi Shinkai ,  Yuji Matsuzaki ,  Wataru Watanabe ,  Kazunobu Yamataka ,  Shinichi Kiyonari ,  Shuichi Wamaki ,  Mitsuru Takahashi ,  Naohito Yamada ,  Akemi Nagao

IPC分类号： C07D215/04 ,  A61K31/44

CPC分类号： C07D215/56 ,  C07D401/04 ,  C07D401/06 ,  C07D405/06 ,  C07D491/04

摘要： Provision of a compound having an anti-HIV activity, particularly an integrase inhibitory activity.A 4-oxoquinoline compound represented by the following formula [I] or a pharmaceutically acceptable salt thereof: wherein each symbol is as defined in the specification. The present invention also relates to a pharmaceutical composition containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof, and a pharmaceutically acceptable carrier; an integrase inhibitor, an antiviral agent, anti-HIV agent, and the like, which contains the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof as an active ingredient; an anti-HIV composition containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof, and one or more other kinds of anti-HIV activity substances as active ingredients; an anti-HIV agent containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof as an active ingredient, which is used for a multiple drug therapy with other anti-HIV agent(s), and the like.

摘要翻译： 提供具有抗HIV活性的化合物，特别是整合酶抑制活性。 由下式[I]表示的4-氧代喹啉化合物或其药学上可接受的盐：其中每个符号如说明书中所定义。 本发明还涉及含有4-氧代喹啉化合物或其药学上可接受的盐和药学上可接受的载体的药物组合物; 含有4-氧代喹啉化合物或其药学上可接受的盐作为活性成分的整合酶抑制剂，抗病毒剂，抗HIV剂等; 含有4-氧代喹啉化合物或其药学上可接受的盐的抗HIV组合物和一种或多种其它类型的抗HIV活性物质作为活性成分; 含有4-氧代喹啉化合物或其药学上可接受的盐作为活性成分的抗HIV剂，其用于与其它抗HIV剂的多重药物治疗等。

公开(公告)号：US20070215840A1

公开(公告)日：2007-09-20

申请号：US11724049

申请日：2007-03-14

申请人： Jun Yoshikawa ,  Yoshimasa Kobayashi ,  Naohito Yamada

发明人： Jun Yoshikawa ,  Yoshimasa Kobayashi ,  Naohito Yamada

IPC分类号： C04B35/581 ,  C04B35/00 ,  H01B1/12

CPC分类号： C04B35/581 ,  C04B35/44 ,  C04B35/6261 ,  C04B35/6262 ,  C04B35/6268 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3821 ,  C04B2235/3886 ,  C04B2235/3895 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/721 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607

摘要： A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in the grain boundaries of aluminum nitride (AlN) particles, thereby reducing temperature dependency of volume resistivity of AlN sintered body; at the same time, the solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving in AlN particles, thereby maintaining the volume resistivity within AlN particles at a high value even at a high temperature.

摘要翻译： 由（Sm，Ce）Al 11 O 18形成的导电通道在氮化铝（AlN）颗粒的晶界处相互连接，从而降低体积电阻率的温度依赖性 的AlN烧结体; 同时，AlN颗粒的固溶体由C和Mg中的至少一种形成，以防止导电通道在AlN颗粒中移动，从而即使在高的AlN颗粒中也保持AlN颗粒内的体积电阻率高值 温度。