公开(公告)号：US20050170648A1

公开(公告)日：2005-08-04

申请号：US11056758

申请日：2005-02-11

申请人： Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method of forming a via in a low-k dielectric material and without the attendant via poisoning problem, or a dual damascene structure formed in the same dielectric and without the same problem are disclosed. The vertical walls of the via opening are first lined with a low-k protection layer and then covered with a barrier layer in order to prevent outgassing from the low-k dielectric material when copper is deposited into the via opening. In the case of a dual damascene structure, it is sufficient that the hole opening underlying the trench opening is first lined with the low-k protection layer. The resulting via or dual damascene structure is free of poisoned metal and, therefore, more reliable.

公开(公告)号：US06878615B2

公开(公告)日：2005-04-12

申请号：US09863224

申请日：2001-05-24

申请人： Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method of forming a via in a low-k dielectric material and without the attendant via poisoning problem, or a dual damascene structure formed in the same dielectric and without the same problem are disclosed. The vertical walls of the via opening are first lined with a low-k protection layer and then covered with a barrier layer in order to prevent outgassing from the low-k dielectric material when copper is deposited into the via opening. In the case of a dual damascene structure, it is sufficient that the hole opening underlying the trench opening is first lined with the low-k protection layer. The resulting via or dual damascene structure is free of poisoned metal and, therefore, more reliable.

摘要翻译： 公开了一种在低k电介质材料中形成通孔并且不伴随通过中毒问题的方法，或者形成在相同电介质中并且没有相同问题的双镶嵌结构。 通孔开口的垂直壁首先衬有低k保护层，然后被阻挡层覆盖，以便当铜沉积到通孔中时，防止从低k电介质材料脱气。 在双镶嵌结构的情况下，沟槽开口下方的开孔首先衬有低k保护层就足够了。 所得到的通孔或双镶嵌结构没有中毒金属，因此更可靠。

公开(公告)号：US07250683B2

公开(公告)日：2007-07-31

申请号：US11056758

申请日：2005-02-11

申请人： Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method of forming a via in a low-k dielectric material and without the attendant via poisoning problem, or a dual damascene structure formed in the same dielectric and without the same problem are disclosed. The vertical walls of the via opening are first lined with a low-k protection layer and then covered with a barrier layer in order to prevent outgassing from the low-k dielectric material when copper is deposited into the via opening. In the case of a dual damascene structure, it is sufficient that the hole opening underlying the trench opening is first lined with the low-k protection layer. The resulting via or dual damascene structure is free of poisoned metal and, therefore, more reliable.

摘要翻译： 公开了一种在低k电介质材料中形成通孔并且不伴随通过中毒问题的方法，或者形成在相同电介质中并且没有相同问题的双镶嵌结构。 通孔开口的垂直壁首先衬有低k保护层，然后被阻挡层覆盖，以便当铜沉积到通孔中时，防止从低k电介质材料脱气。 在双镶嵌结构的情况下，沟槽开口下方的开孔首先衬有低k保护层就足够了。 所得到的通孔或双镶嵌结构没有中毒金属，因此更可靠。

公开(公告)号：US06562725B2

公开(公告)日：2003-05-13

申请号：US09899420

申请日：2001-07-05

申请人： Ming-Hsing Tsai ,  Ching-Hua Hsieh ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Ming-Hsing Tsai ,  Ching-Hua Hsieh ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L2100

CPC分类号： H01L21/76829 ,  H01L21/31116 ,  H01L21/314 ,  H01L21/7681 ,  H01L21/76834

摘要： Within a dual damascene method for forming a dual damascene aperture within a microelectronic fabrication there is employed a first etch stop layer formed of a first material and a second etch stop layer formed of a second material. One of the first material and the second material is a non-nitrogenated silicon carbide material and the other of the first material and the second material is a nitrogenated silicon carbide material. By employing the first material and the second material, there may be etched completely through the first etch stop layer to reach a contact region formed there beneath while not etching completely through the second etch stop layer to reach a first dielectric layer formed there beneath.

摘要翻译： 在用于在微电子制造中形成双镶嵌孔的双镶嵌方法中，采用由第一材料形成的第一蚀刻停止层和由第二材料形成的第二蚀刻停止层。 第一材料和第二材料之一是非氮化碳化硅材料，第一材料和第二材料中的另一种是氮化碳化硅材料。 通过使用第一材料和第二材料，可以完全蚀刻通过第一蚀刻停止层以到达其下方形成的接触区域，而不完全蚀刻通过第二蚀刻停止层，以到达在其下方形成的第一介电层。

公开(公告)号：US06224737B1

公开(公告)日：2001-05-01

申请号：US09377540

申请日：1999-08-19

申请人： Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： C25D502

CPC分类号： H01L21/76877 ,  C25D3/38 ,  C25D5/48 ,  C25D7/123 ,  H01L21/2885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure having a trench formed therein is provided. The semiconductor structure may be a substrate with an overlying interlevel metal dielectric layer having the trench. A voltage is applied to the trenched semiconductor inducing a bias field where there is a first field proximate the trench bottom and a second field, greater than the first field, proximate the trench's upper side walls and the semiconductor upper surface proximate the trench. The semiconductor structure is placed into an electroplating solution containing a predetermined concentration of brighteners and levelers. Because of the induced bias field, the brightener concentration is greater proximate the trench bottom and the leveler concentration is greater the trench's upper side walls and the semiconductor upper surface proximate the trench. A copper layer having a predetermined thickness is then electrolytically deposited within the trench in a “bottom-up” fashion and blanket fills the upper surface of the semiconductor structure. The structure may then be planarized by CMP to create a planarized copper filled trench.

摘要翻译： 提供具有形成在其中的沟槽的半导体结构。 半导体结构可以是具有具有沟槽的上覆层间金属介电层的衬底。 电压被施加到沟槽半导体，其诱导偏置场，其中存在靠近沟槽底部的第一场和大于第一场，接近沟槽的上侧壁和靠近沟槽的半导体上表面的第二场。 将半导体结构放入含有预定浓度的增白剂和矫直剂的电镀溶液中。 由于感应偏压场，光滑剂浓度在沟槽底部附近较大，并且矫直剂浓度大于沟槽的上侧壁和接近沟槽的半导体上表面。 然后将具有预定厚度的铜层以“自下而上”的方式电解沉积在沟槽内，并且覆盖填充半导体结构的上表面。 然后可以通过CMP平面化该结构以产生平坦化的铜填充沟槽。

公开(公告)号：US20060199379A1

公开(公告)日：2006-09-07

申请号：US11071104

申请日：2005-03-04

申请人： Ming-Shih Yeh ,  Ming-Hsing Tsai ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Ming-Shih Yeh ,  Ming-Hsing Tsai ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/76808 ,  Y10S438/978

摘要： The manufacture of damascene structures having improved performance, particularly, but not by way of limitation, dual damascene structures is provided. In one embodiment, a substrate having a conductive layer is formed in a first insulating layer. A protective layer is formed above the conductive layer. An etching stop layer is formed above the protective layer and the first insulating layer. A second insulating layer is formed above the etching stop layer. A first patterned photoresist layer is formed above the second insulating layer, the first patterned photoresist layer having a first pattern. The first pattern is etched into the second insulating layer and the etching stop layer to form a first opening. A via plug is filled at least partially in the first opening. An anti-reflective coating (ARC) layer is formed above the second insulating layer. A second patterned photoresist layer is formed above the ARC layer, the second photoresist layer having a second pattern. The second pattern is etched into portions of the via plug, second insulation layer, and the ARC layer to form a second opening, wherein a substantially tapered sidewall portion is formed at the interface of the first and second openings.

摘要翻译： 提供了具有改进的性能，特别但非限制性的双镶嵌结构的镶嵌结构的制造。 在一个实施例中，具有导电层的衬底形成在第一绝缘层中。 在导电层上形成保护层。 在保护层和第一绝缘层上方形成蚀刻停止层。 在蚀刻停止层上形成第二绝缘层。 第一图案化光致抗蚀剂层形成在第二绝缘层之上，第一图案化光致抗蚀剂层具有第一图案。 将第一图案蚀刻到第二绝缘层和蚀刻停止层中以形成第一开口。 通孔插塞至少部分地填充在第一开口中。 在第二绝缘层上方形成抗反射涂层（ARC）层。 第二图案化光致抗蚀剂层形成在ARC层上方，第二光致抗蚀剂层具有第二图案。 第二图案被蚀刻到通孔塞，第二绝缘层和ARC层的部分中以形成第二开口，其中在第一和第二开口的界面处形成大致锥形的侧壁部分。

公开(公告)号：US6140241A

公开(公告)日：2000-10-31

申请号：US270591

申请日：1999-03-18

申请人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Chen-Hua Yu

发明人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Chen-Hua Yu

IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76877 ,  H01L21/2885

摘要： A multi-step electrochemical method for forming a copper metallurgy on an integrated circuit which has high aspect ratio contact/via openings is described. The method is designed to give good coverage and gap filling capability as well as high production throughput by performing the electrochemical deposition of copper in two deposition stages with an dwell period between the stages. The process utilizes a copper plating electrolyte which contains an added brightener and leveler. The first deposition is done at a low current density which provides good coverage resulting from a high throwing power. The high aspect ratio contact/via openings are covered with a substantial thickness of a uniform, high quality copper coating. During the deposition, the concentration of brightener becomes depleted in the base region of high aspect ratio contacts or vias. The concentration of brighteners, is replenished in these regions by diffusion during a brief dwell period wherein the plating current is stopped. Next, a high current density is applied whereby the contact/vias are filled and additional copper is deposited over them at a high deposition rate. The greatest throughput benefits are realized, by way of the high current density step, when the process is applied to the formation of a dual damascene metallurgy.

摘要翻译： 描述了在具有高纵横比接触/通孔开口的集成电路上形成铜冶金的多步电化学方法。 该方法设计为通过在两个沉积阶段之间执行铜的电化学沉积，具有阶段之间的停留时间，以提供良好的覆盖和间隙填充能力以及高的生产量。 该方法使用含有添加的增白剂和矫直机的镀铜电解质。 第一次沉积以低电流密度进行，这提供了由高投掷功率引起的良好覆盖。 高长宽比的接触/通孔开口用相当厚度的均匀的高质量铜涂层覆盖。 在沉积期间，增亮剂的浓度在高纵横比触点或通孔的基极区域中耗尽。 增亮剂的浓度，在电镀电流停止的短暂停留期间通过扩散在这些区域补充。 接下来，施加高电流密度，由此接触/通孔被填充，并且以高沉积速率在其上沉积额外的铜。 通过高电流密度步骤，当该方法应用于双镶嵌冶金的形成时，实现了最大的生产效率。

公开(公告)号：US07354856B2

公开(公告)日：2008-04-08

申请号：US11071104

申请日：2005-03-04

申请人： Ming-Shih Yeh ,  Ming-Hsing Tsai ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Ming-Shih Yeh ,  Ming-Hsing Tsai ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/76808 ,  Y10S438/978

摘要： The manufacture of damascene structures having improved performance, particularly, but not by way of limitation, dual damascene structures is provided. In one embodiment, a substrate having a conductive layer is formed in a first insulating layer. A protective layer is formed above the conductive layer. An etching stop layer is formed above the protective layer and the first insulating layer. A second insulating layer is formed above the etching stop layer. A first patterned photoresist layer is formed above the second insulating layer, the first patterned photoresist layer having a first pattern. The first pattern is etched into the second insulating layer and the etching stop layer to form a first opening. A via plug is filled at least partially in the first opening. An anti-reflective coating (ARC) layer is formed above the second insulating layer. A second patterned photoresist layer is formed above the ARC layer, the second photoresist layer having a second pattern. The second pattern is etched into portions of the via plug, second insulation layer, and the ARC layer to form a second opening, wherein a substantially tapered sidewall portion is formed at the interface of the first and second openings.

摘要翻译： 提供了具有改进的性能，特别但非限制性的双镶嵌结构的镶嵌结构的制造。 在一个实施例中，具有导电层的衬底形成在第一绝缘层中。 在导电层上形成保护层。 在保护层和第一绝缘层上方形成蚀刻停止层。 在蚀刻停止层上形成第二绝缘层。 第一图案化光致抗蚀剂层形成在第二绝缘层之上，第一图案化光致抗蚀剂层具有第一图案。 将第一图案蚀刻到第二绝缘层和蚀刻停止层中以形成第一开口。 通孔塞至少部分地填充在第一开口中。 在第二绝缘层上方形成抗反射涂层（ARC）层。 第二图案化光致抗蚀剂层形成在ARC层上方，第二光致抗蚀剂层具有第二图案。 第二图案被蚀刻到通孔塞，第二绝缘层和ARC层的部分中以形成第二开口，其中在第一和第二开口的界面处形成大致锥形的侧壁部分。

公开(公告)号：US06342448B1

公开(公告)日：2002-01-29

申请号：US09583401

申请日：2000-05-31

申请人： Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L2144

CPC分类号： H01L21/76846 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76873

摘要： A method for forming an improved TaN copper barrier for a copper damascene process is described which has improved adhesion to low-k dielectric layers and also improves the wetting of a copper seed layer deposited over it thereby improving the structure of the copper seed layer which is critical to achieving uniform, high quality electrochemical copper deposition. The copper barrier is a composite structure having an lower thin Ta rich TaN portion which mixes into and reacts with the surface of the low-k dielectric layer, forming a strongly bonded transition layer between the low-k material and the remaining portion of the barrier layer. The presence of the transition layer causes compressive film stress rather than tensile stress as found in the conventional TaN barrier. As a result, the barrier layer does not delaminate from the low-k layer during subsequent processing. A second thick central portion of the barrier layer is formed of stoichiometric TaN which benefits subsequent CMP of the copper damascene structure. An upper thin Ta portion improves barrier wetting to the copper seed layer. The three sections of the laminar barrier are sequentially deposited in a single pumpdown operation by IMP sputtering from a Ta target.

摘要翻译： 描述了一种用于形成用于铜镶嵌工艺的改进的TaN铜阻挡层的方法，其具有改善的对低k电介质层的粘附性，并且还改善了沉积在其上的铜籽晶层的润湿，从而改善了铜籽晶层的结构， 对于实现均匀，高质量的电化学铜沉积至关重要。 铜屏障是具有较低的Ta Ta薄部分的复合结构，其混合并与低k电介质层的表面反应，在低k材料与阻挡层的剩余部分之间形成牢固结合的过渡层 层。 过渡层的存在导致压缩膜应力而不是常规TaN阻挡层中的拉伸应力。 结果，在随后的处理期间，阻挡层不会从低k层分层。 阻挡层的第二厚中心部分由化学计量的TaN形成，这有利于铜镶嵌结构的后续CMP。 上部薄的Ta部分改善了对铜种子层的屏障润湿。 层状阻挡层的三个部分通过来自Ta靶的IMP溅射在单次抽运操作中依次沉积。

公开(公告)号：US07193327B2

公开(公告)日：2007-03-20

申请号：US11042396

申请日：2005-01-25

申请人： Chen-Hua Yu ,  Shing-Chyang Pan ,  Shau-Lin Shue ,  Ching-Hua Hsieh ,  Cheng-Lin Huang ,  Hsien-Ming Lee ,  Jing-Cheng Lin

发明人： Chen-Hua Yu ,  Shing-Chyang Pan ,  Shau-Lin Shue ,  Ching-Hua Hsieh ,  Cheng-Lin Huang ,  Hsien-Ming Lee ,  Jing-Cheng Lin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53295 ,  H01L21/76805 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An opening in a dielectric layer having a unique barrier layer structure is provided. In an embodiment, the opening is a via and a trench. The barrier layer, which may comprise one or more barrier layers, is formed such that the ratio of the thickness of the barrier layers along a sidewall approximately midway between the bottom of the trench and the top of the dielectric layer to the thickness of the barrier layers along the bottom of the trench is greater than about 0.55. In another embodiment, the ratio of the thickness of the barrier layers along a sidewall approximately midway between the bottom of the trench and the top of the dielectric layer to the thickness of the barrier layers along the bottom of the via is greater than about 1.0. An underlying conductive layer may be recessed.

摘要翻译： 提供具有独特的阻挡层结构的电介质层中的开口。 在一个实施例中，开口是通孔和沟槽。 可以形成阻挡层，其可以包括一个或多个阻挡层，使得阻挡层的厚度在沟槽的底部和电介质层的顶部之间的大致中间的侧壁与屏障的厚度之比 沿着沟槽底部的层大于约0.55。 在另一个实施例中，沿着沟槽底部和电介质层的顶部之间大约中间的侧壁的阻挡层的厚度与通孔底部的阻挡层的厚度之比大于约1.0。 潜在的导电层可以凹入。