Semiconductor light-emitting device and fabrication method thereof
    1.
    发明授权
    Semiconductor light-emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08278672B2

    公开(公告)日:2012-10-02

    申请号:US11727378

    申请日:2007-03-26

    IPC分类号: H01L33/22

    CPC分类号: H01L33/16 H01L33/22

    摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有与其上表面垂直的预定晶格方向,其中预定晶格方向从[100]或[100]或[011]或[011]到[011]或[011] ],使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。

    SOLAR CELL MODULE AND THE FABRICATION METHOD OF THE SAME
    3.
    发明申请
    SOLAR CELL MODULE AND THE FABRICATION METHOD OF THE SAME 审中-公开
    太阳能电池模块及其制造方法

    公开(公告)号:US20110005595A1

    公开(公告)日:2011-01-13

    申请号:US12835229

    申请日:2010-07-13

    IPC分类号: H01L31/0232

    摘要: The application illustrates a solar cell module, included a base device, a solar cell on the base device, and a concentrator on the solar cell. The concentrator directly contacts with the solar cell and concentrates the light to the solar cell for opto-electric transformation.

    摘要翻译: 该应用示出了太阳能电池模块,其包括基底器件,基底器件上的太阳能电池和太阳能电池上的集中器。 集中器直接与太阳能电池接触,并将光聚集到太阳能电池进行光电转换。

    Method for manufacturing optoelectronic devices
    4.
    发明授权
    Method for manufacturing optoelectronic devices 有权
    制造光电器件的方法

    公开(公告)号:US08889436B2

    公开(公告)日:2014-11-18

    申请号:US13455207

    申请日:2012-04-25

    IPC分类号: H01L21/00

    摘要: A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately.

    摘要翻译: 一种制造光电器件的方法,包括以下步骤:提供共同的生长衬底; 在共同生长衬底上形成发光外延结构; 在发光外延结构上形成剥离层; 在剥离层上形成太阳能电池外延结构; 在太阳能电池外延结构上形成粘合剂层; 在粘合剂层上证明太阳能电池永久性基板; 并且去除剥离层以分开形成发光器件和太阳能电池器件。