公开(公告)号：US20110062972A1

公开(公告)日：2011-03-17

申请号：US12878234

申请日：2010-09-09

申请人： Minkyu Je ,  Guo-Jun Zhang ,  Tshun Chuan Chai ,  Cheng Fang

发明人： Minkyu Je ,  Guo-Jun Zhang ,  Tshun Chuan Chai ,  Cheng Fang

IPC分类号： G01R27/08

CPC分类号： G01N27/4145

摘要： According to an embodiment of the present invention, a method of determining or adjusting the sensitivity of a biosensor arrangement comprising at least one field effect biosensor is provided, each of the at least one field effect biosensor comprising: a semiconductor substrate comprising a source region, a drain region and a channel region disposed between the source region and the drain region; a gate isolation layer covering the channel region; and a reference electrode disposed over the gate isolation layer such that a electrolytic solution to be sensed can be provided between the reference electrode and the gate isolation layer. The method comprises the following processes carried out for each field effect biosensor: providing an electrolytic solution between the reference electrode and the gate isolation layer; applying a source/drain voltage between the source region and the drain region; varying a reference voltage supplied to the reference electrode over a voltage range; measuring a resulting drain current while varying the reference voltage in order to obtain a corresponding drain current function; and determining the sensitivity of the field effect biosensor based on the reference voltage supplied to the reference electrode and the corresponding drain current function.

摘要翻译： 根据本发明的实施例，提供了一种确定或调整包括至少一个场效应生物传感器的生物传感器装置的灵敏度的方法，所述至少一个场效应生物传感器中的每一个包括：半导体衬底，包括源区， 漏极区域和设置在源极区域和漏极区域之间的沟道区域; 覆盖沟道区的栅极隔离层; 以及设置在栅极隔离层上的参考电极，使得可以在参考电极和栅极隔离层之间设置待感测的电解液。 该方法包括对每个场效应生物传感器进行的以下处理：在参考电极和栅极隔离层之间提供电解液; 在源极区域和漏极区域之间施加源极/漏极电压; 改变在电压范围内提供给参考电极的参考电压; 测量所产生的漏极电流，同时改变参考电压以获得相应的漏极电流功能; 以及基于提供给参考电极的参考电压和相应的漏极电流函数来确定场效应生物传感器的灵敏度。

公开(公告)号：US08860442B2

公开(公告)日：2014-10-14

申请号：US12878234

申请日：2010-09-09

申请人： Minkyu Je ,  Guo-Jun Zhang ,  Tshun Chuan Chai ,  Cheng Fang

发明人： Minkyu Je ,  Guo-Jun Zhang ,  Tshun Chuan Chai ,  Cheng Fang

IPC分类号： G01R27/08 ,  G01N27/414

CPC分类号： G01N27/4145

摘要： According to an embodiment of the present invention, a method of determining or adjusting the sensitivity of a biosensor arrangement comprising at least one field effect biosensor is provided, each of the at least one field effect biosensor comprising: a semiconductor substrate comprising a source region, a drain region and a channel region disposed between the source region and the drain region; a gate isolation layer covering the channel region; and a reference electrode disposed over the gate isolation layer such that a electrolytic solution to be sensed can be provided between the reference electrode and the gate isolation layer. The method comprises the following processes carried out for each field effect biosensor: providing an electrolytic solution between the reference electrode and the gate isolation layer; applying a source/drain voltage between the source region and the drain region; varying a reference voltage supplied to the reference electrode over a voltage range; measuring a resulting drain current while varying the reference voltage in order to obtain a corresponding drain current function; and determining the sensitivity of the field effect biosensor based on the reference voltage supplied to the reference electrode and the corresponding drain current function.

摘要翻译： 根据本发明的实施例，提供了一种确定或调整包括至少一个场效应生物传感器的生物传感器装置的灵敏度的方法，所述至少一个场效应生物传感器中的每一个包括：半导体衬底，包括源区， 漏极区域和设置在源极区域和漏极区域之间的沟道区域; 覆盖沟道区的栅极隔离层; 以及设置在栅极隔离层上的参考电极，使得可以在参考电极和栅极隔离层之间设置待感测的电解液。 该方法包括对每个场效应生物传感器进行的以下处理：在参考电极和栅极隔离层之间提供电解液; 在源极区域和漏极区域之间施加源极/漏极电压; 改变在电压范围内提供给参考电极的参考电压; 测量所产生的漏极电流，同时改变参考电压以获得相应的漏极电流功能; 以及基于提供给参考电极的参考电压和相应的漏极电流函数来确定场效应生物传感器的灵敏度。

公开(公告)号：US07592256B2

公开(公告)日：2009-09-22

申请号：US10486794

申请日：2002-08-07

申请人： Kazuya Okubo ,  Mitsuhiro Tachibana ,  Cheng Fang ,  Kohichi Sato ,  Hotaka Ishizuka

发明人： Kazuya Okubo ,  Mitsuhiro Tachibana ,  Cheng Fang ,  Kohichi Sato ,  Hotaka Ishizuka

IPC分类号： H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.

摘要翻译： 在能够被真空化的容器中的待处理物体的表面上形成钨膜的方法包括以下步骤：通过交替重复用于供给还原气体的还原气体供给工序和供给钨的气体来形成钨膜 用于在含有钨的气体之间进行中间吹扫处理以在对容器抽真空的同时供应惰性气体的方法。 在反复进行的还原气体供给工序之间的还原气体供给工序的还原气体供给期间比剩余的还原气体供给工序的时间长。

公开(公告)号：US20050032364A1

公开(公告)日：2005-02-10

申请号：US10486794

申请日：2002-08-07

申请人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

发明人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuumizing-enabled treating vessel (22), a reduction gas supplying process 70 and a tungsten gas supplying process 72 for supplying a tungsten-containing gas are alternately repeated with a purge process 74, for supplying an inert gas while vacuumizing, intervened therebetween to thereby form an initial tungsten film 76. Therefore, an initial tungsten film can be formed as a nucleation layer high in film thickness uniformity; and, accordingly, when main tungsten films are subsequently deposited, it is possible to restrict voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and provide good burying characteristics.

摘要翻译： 形成钨膜的方法，其能够限制空洞和火山，尽管埋孔的直径小，但具有很大的不利影响特性，并且具有良好的埋藏特性。 在真空化处理容器（22）的处理对象（W）的表面上形成钨膜时，交替重复用于供给含钨气体的还原气体供给工序70和钨气供给工序72 吹扫工艺74，用于在抽真空时供应惰性气体，从而形成初始钨膜76.因此，可以形成初始钨膜作为膜厚均匀性高的成核层; 因此，随后沉积主钨膜时，尽管埋孔的直径很小，但可以限制大小不利地影响特性的空隙和火山，并提供良好的埋藏特性。

公开(公告)号：US20110129910A1

公开(公告)日：2011-06-02

申请号：US12907214

申请日：2010-10-19

申请人： Tae Goo Kang ,  Cheng Fang ,  Siow Pin Melvin Tan ,  Hongmiao Ji ,  Xiaowu Zhang ,  Yu Chen

发明人： Tae Goo Kang ,  Cheng Fang ,  Siow Pin Melvin Tan ,  Hongmiao Ji ,  Xiaowu Zhang ,  Yu Chen

IPC分类号： C12M1/00 ,  F25D5/00

CPC分类号： B01L7/52 ,  B01L9/52 ,  B01L2300/1805 ,  B01L2300/1877 ,  B01L2300/1894

摘要： Embodiments provide a cooling device. The cooling device comprises a container configured as a heat sink. The container is at least partially made from heat conducting material. The cooling device further comprises endothermic chemical material which is contained in the container.

摘要翻译： 实施例提供一种冷却装置。 冷却装置包括构造为散热器的容器。 容器至少部分地由导热材料制成。 冷却装置还包括容纳在容器中的吸热化学材料。

公开(公告)号：US20060142487A1

公开(公告)日：2006-06-29

申请号：US11338767

申请日：2006-01-25

申请人： Ray-Hsi Hsu ,  Cheng Fang

发明人： Ray-Hsi Hsu ,  Cheng Fang

IPC分类号： C08L53/00 ,  C08F265/04

CPC分类号： C08F287/00 ,  C08F291/02

摘要： The present invention discloses a process for the production of a transparent rubber-modified monovinylidene aromatic resin. The rubber-modified monovinylidene aromatic resin comprises: a dispersed rubber particle (A) and a continuous phase matrix copolymer (B). The surface of the molding has a maximum height difference (ΔHmax) of less than 3,200 Å, and an average height difference (ΔHave) of less than 2,000 Å when measured with a surface profiler. The average ratios of major diameter to minor diameter of said rubber particles before and after annealing at 120° C. for 40 minutes are A1 and A2 respectively, and the ratio of A1/A2 ranges form 1.08 to 2.35.

摘要翻译： 本发明公开了一种透明橡胶改性单亚乙烯基芳族树脂的制造方法。 橡胶改性的单亚乙烯基芳族树脂包括：分散的橡胶颗粒（A）和连续相基质共聚物（B）。 当用表面轮廓仪测量时，模制件的表面具有小于3,200Å的最大高差（DeltaHmax）和小于2000Å的平均高差（DeltaHave）。 在120℃退火40分钟之前和之后，所述橡胶颗粒的长径与小直径的平均比分别为A 1和A 2，A 1 / A 2的比例范围为1.08至2.35。

公开(公告)号：US20070228412A1

公开(公告)日：2007-10-04

申请号：US11443963

申请日：2006-05-30

申请人： Sheng Yang ,  Cheng Fang

发明人： Sheng Yang ,  Cheng Fang

IPC分类号： H01L29/74

CPC分类号： H01L27/0262 ,  H01L29/87

摘要： A low voltage triggering silicon controlled rectifier (LVTSCR) is disclosed. The LVTSCR utilizes an added resistor disposed in a second doped region between the anode of the LVTSCR and the emitter of the parasitical bipolar PNP transistor to increase the holding voltage thereof when the LVTSCR is triggered. The LVTSCR includes a semiconductor substrate with a first conductive type and a gate. The semiconductor substrate includes a first doped region with a second conductive type, a second doped region with the first conductive type, a third doped region with the second conductive type, a fourth doped region with the second conductive type and a fifth doped region with the first conductive type. The gate is applied with a lower triggering voltage to trigger the LVTSCR.

摘要翻译： 公开了一种低电压触发可控硅整流器（LVTSCR）。 LVTSCR利用设置在LVTSCR的阳极和寄生双极性PNP晶体管的发射极之间的第二掺杂区域中的附加电阻器，以在触发LVTSCR时增加其保持电压。 LVTSCR包括具有第一导电类型和栅极的半导体衬底。 半导体衬底包括具有第二导电类型的第一掺杂区域，具有第一导电类型的第二掺杂区域，具有第二导电类型的第三掺杂区域，具有第二导电类型的第四掺杂区域和具有第二导电类型的第五掺杂区域， 第一导电类型。 门被施加较低的触发电压以触发LVTSCR。