Annealing Process
    5.
    发明申请
    Annealing Process 审中-公开
    退火工艺

    公开(公告)号:US20160186301A1

    公开(公告)日:2016-06-30

    申请号:US14910269

    申请日:2014-08-21

    IPC分类号: C22F1/047 C22C21/08

    CPC分类号: C22F1/047 C22C21/08 C22F1/04

    摘要: An annealing process for treatment of an aluminum alloy of AA5XXX series which comprises steps of annealing the aluminum alloy at a first temperature of from about 350° C. to about 450° C. by a rate of temperature increase from about 0.1° C./s to about 0.5° C./s; and cooling down the annealed aluminum alloy to a temperature below 50° C. Aluminum alloys of the AA5XXX series treated by the annealing process of the present invention are also provided.

    摘要翻译: 一种用于处理AA5XXX系列的铝合金的退火方法,其包括在约350℃至约450℃的第一温度下以约0.1℃的温度升高的速率退火铝合金的步骤。 s至约0.5℃/ s; 并将退火的铝合金冷却至低于50℃的温度。还提供了通过本发明的退火工艺处理的AA5XXX系列的铝合金。

    Grain Size Tuning for Radiation Resistance
    6.
    发明申请
    Grain Size Tuning for Radiation Resistance 审中-公开
    颗粒尺寸调整抗辐射

    公开(公告)号:US20170002456A1

    公开(公告)日:2017-01-05

    申请号:US15102425

    申请日:2014-12-22

    摘要: A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850° C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450° C. to about 800° C. at a rate of temperature increase of from about 2° C./minute to about 30° C./minute; and maintaining the nanocrystalline material at the temperature of from about 450° C. to about 800° C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage.

    摘要翻译: 一种制造具有选自金属和金属合金的起始材料的具有多晶微结构的耐辐射纳米晶体材料的方法。 该方法包括通过物理气相沉积将起始材料沉积在保持在约室温至约850℃的衬底温度下的衬底上以产生纳米晶体材料。 该方法还可以包括以约2℃/分钟至约30℃/分钟的升温速率将纳米晶体材料加热至约450℃至约800℃的温度; 并将纳米晶体材料保持在约450℃至约800℃的温度下约5分钟至约35分钟的时间。 还描述了通过上述方法生产的纳米晶体材料。 由该方法生产的纳米晶体材料具有耐辐射损伤。

    Selective Grain Boundary Engineering
    7.
    发明申请
    Selective Grain Boundary Engineering 审中-公开
    选择性粮食边界工程

    公开(公告)号:US20160201177A1

    公开(公告)日:2016-07-14

    申请号:US14910272

    申请日:2014-08-21

    摘要: A process for grain boundary engineering of an aluminum alloy of AA5XXX series which includes steps of annealing the aluminum alloy at a first temperature of from about 350° C. to about 450° C.; deforming the annealed aluminum alloy to reduce the thickness by from about 2% to about 20% of the original thickness of the aluminum alloy; heat treating the deformed aluminum alloy at a second temperature from about 450° C. to about 550° C., and optionally sensitizing the heat treated alloy in one or more sensitizing steps. Aluminum alloys of the AA5XXX series treated by the process of the present invention are also provided.

    摘要翻译: 一种AA5XXX系列铝合金晶界工程的方法,其包括在约350℃至约450℃的第一温度下退火铝合金的步骤; 使退火的铝合金变形,以将厚度减小铝合金原始厚度的约2%至约20%; 在约450℃至约550℃的第二温度下对变形的铝合金进行热处理,以及任选地在一个或多个增感步骤中对经热处理的合金进行敏化。 还提供了通过本发明的方法处理的AA5XXX系列的铝合金。

    Grain Size Tuning for Radiation Resistance
    8.
    发明申请

    公开(公告)号:US20200024729A1

    公开(公告)日:2020-01-23

    申请号:US16224302

    申请日:2018-12-18

    摘要: A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850° C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450° C. to about 800° C. at a rate of temperature increase of from about 2° C./minute to about 30° C./minute; and maintaining the nanocrystalline material at the temperature of from about 450° C. to about 800° C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage.