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公开(公告)号：US5131022A
公开(公告)日：1992-07-14
申请号：US769493
申请日：1991-10-01
IPC分类号： G03F7/20
CPC分类号： G03F7/70558 , G03F7/2008 , G03F7/70875
摘要： An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.
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公开(公告)号：US5157700A
公开(公告)日：1992-10-20
申请号：US401615
申请日：1989-08-31
申请人： Hiroshi Kurosawa , Mitsuaki Amemiya , Shigeru Terashima , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Kunitaka Ozawa , Makiko Mori , Ryuichi Ebinuma , Shinichi Hara , Nobutoshi Mizusawa , Eigo Kawakami
发明人： Hiroshi Kurosawa , Mitsuaki Amemiya , Shigeru Terashima , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Kunitaka Ozawa , Makiko Mori , Ryuichi Ebinuma , Shinichi Hara , Nobutoshi Mizusawa , Eigo Kawakami
IPC分类号： G03F7/20
CPC分类号： G03F7/70691 , G03F7/70058 , G03F7/70091 , G03F7/702
摘要： An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.
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公开(公告)号：US5498501A
公开(公告)日：1996-03-12
申请号：US416503
申请日：1995-04-04
CPC分类号： G03F7/70066 , G03F7/2022 , G03F7/7045 , Y10S438/949
摘要： A method of manufacturing of semiconductor devices, includes exposing different portions of a semiconductor substrate with a first exposure apparatus having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus, which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the entire second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.
摘要翻译： 一种半导体器件的制造方法，包括用具有第一曝光范围的第一曝光装置曝光半导体衬底的不同部分; 将半导体衬底相对于第二曝光装置的第二曝光范围放置和对准，该范围大于第一曝光装置的第一曝光范围; 检测由第二曝光装置的第二曝光范围所覆盖的半导体衬底的每个部分的对准误差; 基于检测到的对准误差，计算半导体衬底的这些部分相对于第二曝光装置的整个第二曝光范围的总体对准误差; 并根据计算的整体对准误差来控制第二曝光装置的曝光操作。
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公开(公告)号：US5390227A
公开(公告)日：1995-02-14
申请号：US062151
申请日：1993-05-17
CPC分类号： G03F7/70066 , G03F7/702 , G03F7/70858 , G03F7/70875
摘要： An exposure apparatus for exposing a semiconductor wafer to a semiconductor device pattern formed in a mask. The exposure energy is, for example, X-rays contains in synchrotron orbit radiation. A blade for limiting the area irradiated with the exposure energy on a mask or wafer is integrally movable in an alignment detecting unit for detecting the alignment mark. Four of such blades are provided to provide a square exposure area. The blades are movable independently by the associated alignment detecting units. Each of the blades is finely movable relative to the associated alignment detecting unit. The shape or size or the like of the blade is determined in consideration of the position of the blade in the direction of the exposure energy irradiation, and the maximum and minimum exposure view angle. The blade is cooled. The exposure area can be changed highly accurately and efficiently with a simple structure.
摘要翻译： 一种用于将半导体晶片暴露于形成在掩模中的半导体器件图案的曝光装置。 曝光能量例如是X射线含有同步加速器轨道辐射。 用于将在曝光能量上照射的面积限制在掩模或晶片上的刀片可在用于检测对准标记的对准检测单元中一体地移动。 提供四个这样的刀片以提供方形曝光区域。 叶片可通过相关联的对准检测单元独立地移动。 每个叶片相对于相关联的对准检测单元精细地移动。 考虑到叶片在曝光能量照射方向上的位置以及最大和最小曝光视角来确定叶片的形状或尺寸等。 刀片冷却。 曝光区域可以用简单的结构高精度高效地进行改变。
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公开(公告)号：US5267292A
公开(公告)日：1993-11-30
申请号：US026105
申请日：1993-03-01
CPC分类号： G03F7/70816 , G03F7/70858 , G03F7/70866 , G03F7/70875
摘要： An X-ray exposure apparatus for exposing a semiconductor wafer to a mask with X-rays, to print a pattern of the mask onto the wafer, is disclosed. The ambience within a stage accommodating chamber, accommodating a mask, a semiconductor wafer, and the like, is replaced by helium. Thereafter, a predetermined quantity of helium is supplied into the stage accommodating chamber. This effectively prevents degradation of the purity of helium due to air leakage into the chamber. Therefore, any undesirable decrease in the quantity of X-ray transmission can be avoided. Thus, high-precision and high-throughput exposure is ensured.
摘要翻译： 公开了一种用于将半导体晶片暴露于具有X射线的掩模的X射线曝光装置，以将掩模的图案印刷在晶片上。 由氦气代替在平台容纳室内容纳掩模，半导体晶片等的氛围。 此后，将预定量的氦供应到载物台容纳室中。 这有效地防止由于空气泄漏到室中氦的纯度的降低。 因此，可以避免X射线透射量的任何不期望的减少。 因此，确保了高精度和高通量的曝光。
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公开(公告)号：US5459573A
公开(公告)日：1995-10-17
申请号：US291747
申请日：1994-08-17
申请人： Naoto Abe , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Noriyuki Nose
发明人： Naoto Abe , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Noriyuki Nose
IPC分类号： G01B11/00 , G01D5/26 , G03F9/00 , H01L21/68 , H01L31/12 , H01L33/00 , H01S5/06 , H01S5/062 , H01S5/0683 , G01N21/86
CPC分类号： G03F9/7088 , G03F9/7049 , H01L21/68 , H01L21/682 , H01S5/06835 , H01S5/06216
摘要： A position detecting apparatus usable for aligning mask and a semiconductor wafer, wherein a laser beam produced by a semiconductor laser is projected through a predetermined optical system to alignment marks formed on the mask and the wafer, and the light reflected by the marks are detected by an accumulation type sensor to produce an electrical signal, from which the relative positional relation between the mask and the wafer are detected on the basis of the electrical signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor is controlled. In this apparatus, the beam emitting strength of the semiconductor laser is made constant, and the control of thee amount of light incident on the accumulation sensor is effected by controlling the operation period of the semiconductor laser. In addition, the actuation timing of the semiconductor laser is advanced from the accumulation start of the accumulation type sensor by the time required for the semiconductor laser to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor is precise.
摘要翻译： 一种可用于对准掩模和半导体晶片的位置检测装置，其中由半导体激光器产生的激光束通过预定的光学系统投射到形成在掩模和晶片上的对准标记，并且由标记反射的光被 用于产生电信号的累积型传感器，根据电信号检测掩模和晶片之间的相对位置关系。 为了获得适当的标记信号，控制入射在累积传感器上的光量。 在该装置中，半导体激光器的发射光强度保持恒定，并且通过控制半导体激光器的工作周期来控制入射到积聚传感器上的光量。 此外，半导体激光器的激活定时从累积型传感器的累积开始到半导体激光器在其致动之后被热稳定所需的时间前进。 由积累传感器产生的标记检测信号是精确的。
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公开(公告)号：US5008703A
公开(公告)日：1991-04-16
申请号：US407434
申请日：1989-09-06
申请人： Eigo Kawakami , Kunitaka Ozawa , Koji Uda , Isamu Shimoda , Shunichi Uzawa
发明人： Eigo Kawakami , Kunitaka Ozawa , Koji Uda , Isamu Shimoda , Shunichi Uzawa
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/7075 , G03F7/709
摘要： Exposure apparatus and control of the same, for exposing a semiconductor wafer to a mask with a predetermined radiation energy, for manufacture of semiconductor devices, is disclosed. During a time period in which the mask-to-wafer alignment or the exposure of the wafer to the mask is made, the operation of any other driving device that has no participation in the aligning operation or the exposure operation, is prohibited. This ensures high-precision pattern printing.
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公开(公告)号：US4969168A
公开(公告)日：1990-11-06
申请号：US401654
申请日：1989-08-31
申请人： Eiji Sakamoto , Shinichi Hara , Isamu Shimoda , Shunichi Uzawa
发明人： Eiji Sakamoto , Shinichi Hara , Isamu Shimoda , Shunichi Uzawa
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30 , H01L21/683
CPC分类号： G03F7/707 , G03F7/70866 , G03F7/70875 , H01L21/6833 , H01L21/6838
摘要： A wafer chuck usable with a semiconductor exposure apparatus wherein a mask and a semiconductor wafer are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer. The wafer is first attracted on the wafer supporting surface of the chuck by vacuum attraction, and thereafter, the wafer is attracted by the electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying a gas. When the pattern of the mask is transferred onto the wafer, the wafer is retained on the wafer supporting surface by the electrostatic attraction force only. By this, the sheet-like member (wafer) supporting apparatus can correctly contact the wafer supporting surface to the wafer without being influenced by the undulation of the wafer. In addition, the heat produced in the wafer during exposure can be removed efficiently by temperature controlled water supplied to the wafer supporting apparatus.
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公开(公告)号：US5063582A
公开(公告)日：1991-11-05
申请号：US658434
申请日：1991-02-20
申请人： Tetsuzo Mori , Eiji Sakamoto , Shinichi Hara , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Kunitaka Ozawa
发明人： Tetsuzo Mori , Eiji Sakamoto , Shinichi Hara , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Kunitaka Ozawa
IPC分类号： G03F7/20
CPC分类号： G03F7/709 , G03F7/707 , G03F7/70716 , G03F7/70866 , G03F7/70875
摘要： The present invention relates to a temperature control system for a lithographic exposure apparatus wherein a mask and wafer are closely disposed, and predetermined exposure energy is applied to respective shot areas of the wafer through the mask. The exposure energy is a soft-X-ray source, for example. The pattern of the mask is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus, a temperature control medium liquid is supplied into the wafer chuck which supports the wafer at the exposure position. The flow rate of the temperature control liquid is different during an exposure operation than during a non-exposure-operation. The flow control is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also, of the heat generation in the wafer by the exposure energy, so that the vibration of the wafer chuck during the exposure operation is suppressed. Simultaneously the temperature rise of the wafer can also be suppressed. The pattern transfer from the mask to the wafer thus be precisely performed.
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公开(公告)号：US5610965A
公开(公告)日：1997-03-11
申请号：US197569
申请日：1994-02-17
申请人： Makiko Mori , Kunitaka Ozawa , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Eiji Sakamoto
发明人： Makiko Mori , Kunitaka Ozawa , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Eiji Sakamoto
IPC分类号： G03F1/76 , G03F7/20 , H01L21/027 , G21K5/00
CPC分类号： G03F7/70866 , G03F7/70875
摘要： A method of exposing a wafer to exposure energy such as ultraviolet rays or X-rays through a mask to transfer a pattern of the mask onto the wafer, for example. The temperature of the mask and/or the wafer increases during the exposure operation by absorption of the exposure energy. While the wafer is being exposed, the temperature of the mask and/or the wafer is detected. If the temperature is going to exceed an exposable temperature range determined on the basis of the line width of the pattern to be transferred, the exposure operation is interrupted. Then, the heat accumulated in the mask and/or the wafer is removed. Thereafter, the exposure operation is resumed. This is repeated until the predetermined or required amount of exposure is reached, for one shot. By this, thermal expansion of the mask and the wafer during the exposure operation is prevented to assure the precision of the pattern transfer.
摘要翻译： 例如，通过掩模将晶片暴露于诸如紫外线或X射线的曝光能量以将掩模的图案转印到晶片上的方法。 掩模和/或晶片的温度在曝光操作期间通过吸收曝光能量而增加。 当晶片被暴露时，检测掩模和/或晶片的温度。 如果温度超过基于要传送的图案的线宽确定的可曝光温度范围，则曝光操作被中断。 然后，除去积存在掩模和/或晶片中的热量。 此后，恢复曝光操作。 一直重复直到达到预定或所需的曝光量。 由此，防止曝光操作期间的掩模和晶片的热膨胀，从而确保图案转印的精度。
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