公开(公告)号：US20120302007A1

公开(公告)日：2012-11-29

申请号：US13538654

申请日：2012-06-29

申请人： Mitsuaki KATAGIRI ,  Hisashi TANIE ,  Jun KAYAMORI ,  Dai SASAKI ,  Hiroshi MORIYA

发明人： Mitsuaki KATAGIRI ,  Hisashi TANIE ,  Jun KAYAMORI ,  Dai SASAKI ,  Hiroshi MORIYA

IPC分类号： H01L21/60

CPC分类号： H01L25/105 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/50 ,  H01L24/86 ,  H01L25/0657 ,  H01L2224/29101 ,  H01L2224/29191 ,  H01L2225/0652 ,  H01L2225/06555 ,  H01L2225/06579 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2924/00

摘要： In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

摘要翻译： 在层叠型半导体器件中，堆叠第一半导体器件和至少一个第二半导体器件。 第一半导体器件包括布线板和安装在布线板上的第一半导体芯片。 第二半导体器件包括布线板和安装在布线板上的第二半导体芯片。 每个第二半导体器件的第二半导体芯片的厚度比第一半导体芯片的厚度厚。

公开(公告)号：US20100038767A1

公开(公告)日：2010-02-18

申请号：US12538390

申请日：2009-08-10

申请人： Hiroshi MORIYA ,  Hisashi TANIE ,  Emi SAWAYAMA ,  Masahiro YAMAGUCHI

发明人： Hiroshi MORIYA ,  Hisashi TANIE ,  Emi SAWAYAMA ,  Masahiro YAMAGUCHI

IPC分类号： H01L25/11 ,  H01L21/50

CPC分类号： H01L25/0657 ,  H01L23/49816 ,  H01L23/5385 ,  H01L25/50 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2225/06572 ,  H01L2225/06579 ,  H01L2924/15311

摘要： The semiconductor device includes a stacked semiconductor package in which end portions of a plurality of flexible substrates have bonded portions which are connected together by wirings and in which a plurality of semiconductor packages are electrically connected to a mother substrate via the bonded portions. In at least a part of a region of portions of the plurality of flexible substrates that extends from the side surfaces of each of the semiconductor elements, and that is present between side surfaces of each of the semiconductor elements and the bonded portions of the flexible substrates, the plurality of flexible substrates have a curved portion, and the shape of the curved portion of at least one flexible substrate is different from the shape of a curved portion of another flexible substrate adjacent to this flexible substrate.

摘要翻译： 半导体器件包括堆叠半导体封装，其中多个柔性基板的端部具有通过布线连接在一起的接合部，并且其中多个半导体封装经由接合部电连接到母基板。 在多个柔性基板的从每个半导体元件的侧表面延伸并且存在于每个半导体元件的侧表面和柔性基板的接合部分之间的部分的区域的至少一部分中 多个柔性基板具有弯曲部分，并且至少一个柔性基板的弯曲部分的形状不同于与该柔性基板相邻的另一柔性基板的弯曲部分的形状。

公开(公告)号：US20100254421A1

公开(公告)日：2010-10-07

申请号：US12750838

申请日：2010-03-31

申请人： Yoshihiko IGA ,  Hiroshi MORIYA ,  Yutaka INOUE ,  Hideki HARA ,  Keiichi MIYAUCHI

发明人： Yoshihiko IGA ,  Hiroshi MORIYA ,  Yutaka INOUE ,  Hideki HARA ,  Keiichi MIYAUCHI

IPC分类号： H01S5/40

CPC分类号： H01S5/4031 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/02476 ,  H01S5/0425

摘要： Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a groove portion 9 between the supporting portion 25 neighboring and the light emitting portions 7.

摘要翻译： 在半导体激光器件中，将多光束结构的半导体激光元件阵列安装在子座上，多光束结构的半导体激光元件阵列包括一片半导体衬底11; 公共电极1，形成在半导体衬底的第一表面上; 半导体层2，其形成在半导体衬底的另一个表面上，并且在其内部具有多个发光部分7; 分别形成在多个发光部分上方的多个第二导电类型的阳极电极3; 以及支撑部25，其设置在形成发光部的区域的外侧，其中，在所述副安装座的一个表面上，通过焊料4与所述半导体激光元件阵列的电极3连接，形成所述焊料4 覆盖支撑部分和与其相邻的电极，并且在电极3上还形成有在相邻的支撑部分25和发光部分7之间的槽部分9。