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公开(公告)号：US11387173B2
公开(公告)日：2022-07-12
申请号：US16686971
申请日：2019-11-18
IPC分类号： H01L23/495 , H01L23/00 , H01L21/48 , H01L21/56 , H01L23/31
摘要： A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.
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公开(公告)号：US11004761B2
公开(公告)日：2021-05-11
申请号：US16485183
申请日：2018-02-28
IPC分类号： H01L23/31 , H01L23/08 , H01L23/29 , H01L23/433 , H01L23/00
摘要： The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.
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公开(公告)号：US10431528B2
公开(公告)日：2019-10-01
申请号：US16070352
申请日：2016-02-08
发明人： Takamasa Iwai , Satoshi Kondo , Hiroshi Kawashima , Junji Fujino , Ken Sakamoto
IPC分类号： H01L23/495
摘要： A leadframe of a semiconductor device includes a die pad, first and second suspension leads, and a frame. The main surfaces of the die pad and the frame are located on different planes, and the die pad and the frame are connected to each other by the first and second suspension leads. A first boundary line between the first suspension lead and the die pad runs on a straight line different from a second boundary line between the second suspension lead and the die pad. A third boundary line between the first suspension lead and the frame runs on a straight line different from a fourth boundary line between the second suspension lead and the frame.
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公开(公告)号：US09716072B2
公开(公告)日：2017-07-25
申请号：US15112890
申请日：2014-05-12
IPC分类号： H01L23/495 , H01L21/50 , H01L23/00 , H01L21/56 , H01L23/433 , H01L23/31
CPC分类号： H01L24/49 , H01L21/565 , H01L23/3107 , H01L23/4334 , H01L23/49537 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L2224/291 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48108 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/49052 , H01L2224/49171 , H01L2224/49505 , H01L2224/73265 , H01L2924/10161 , H01L2924/13055 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： A power semiconductor element is fixed on a die pad of the lead frame. A metal plate is bonded to a lower surface of the die pad via an insulating film. The inner lead etc. are disposed in a cavity between a lower mold and an upper mold and are encapsulated with an encapsulation resin. The lower mold has a stepped portion provided in a bottom surface of the cavity below the inner lead. A height of an upper surface of the stepped portion is larger than a height of an upper surface of the power semiconductor element disposed in the cavity. When an encapsulation resin is injected into the cavity, a lower surface of the metal plate is in contact with the bottom surface of the cavity, and the encapsulation resin flows downward from above the stepped portion toward the upper surface of the power semiconductor element.
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5.发明授权公开(公告)号：US11631623B2
公开(公告)日：2023-04-18
申请号：US17267987
申请日：2019-09-04
发明人： Takamasa Iwai , Junji Fujino , Hiroshi Kawashima
IPC分类号： H01L23/28 , H01L23/29 , H01L23/31 , H01L23/367 , H01L23/50 , H01L23/00 , H01L25/07 , H01L25/18
摘要： A lead member includes a plurality of lead terminals, and the lead terminals extend from the inside to the outside of a mold resin. Each of the lead terminals has a base portion and a tip end portion on the outside of the mold resin. The base portion is disposed on a region side having a semiconductor element and extends in a direction protruding from the mold resin. The tip end portion extends in a direction different from the base portion and is disposed on the opposite side to a region having the semiconductor element as viewed from the base portion. The length by which the base portion extends differs between a pair of lead terminals adjacent to each other, among the lead terminals. At least a surface of the base portion of each of the lead terminals is covered with a coating resin.
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公开(公告)号：US11107746B2
公开(公告)日：2021-08-31
申请号：US15763232
申请日：2016-02-09
IPC分类号： H01L21/56 , H01L23/31 , H01L23/42 , H01L23/495 , H01L25/16 , H01L25/065 , H01L23/373 , H01L23/433 , H01L23/00 , H01L25/00
摘要： A lead frame (4) includes an inner lead (5), an outer lead (2) connected to the inner lead (5), and a power die pad (7). A power semiconductor device (9) is bonded onto the power die pad (7). A first metal thin line (11) electrically connects the inner lead (5) and the power semiconductor device (9). Sealing resin (1) seals the inner lead (5), the power die pad (7), the power semiconductor device (9), and the first metal thin line (11). The sealing resin (1) includes an insulating section (15) directly beneath the power die pad (7). A thickness of the insulating section (15) is 1 to 4 times a maximum particle diameter of inorganic particles in the sealing resin (1). A first hollow (14) is provided on an upper surface of the sealing resin (1) directly above the power die pad (7) in a region without the first metal thin line (11) and the power semiconductor device (9).
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公开(公告)号：US10541193B2
公开(公告)日：2020-01-21
申请号：US15322191
申请日：2014-10-03
IPC分类号： H01L23/495 , H01L21/56
摘要： A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.
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公开(公告)号：US09947613B2
公开(公告)日：2018-04-17
申请号：US15508118
申请日：2014-11-07
发明人： Hiroshi Kawashima , Ken Sakamoto , Satoshi Kondo , Taketoshi Shikano , Yoshihiro Takai , Claudio Feliciani
IPC分类号： H01L23/00 , H01L23/495 , H01L21/56 , H01L23/498 , H01L23/31
CPC分类号： H01L23/49537 , H01L21/565 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/49541 , H01L23/49551 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49861 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L25/07 , H01L25/18 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48108 , H01L2224/48137 , H01L2224/48245 , H01L2224/48247 , H01L2224/4903 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/19105 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A power semiconductor device includes a power semiconductor element, a controlling element, a first lead frame and a second lead frame, respectively, a first metal wire electrically connecting the power semiconductor element and the first lead frame, and a sealing body covering these components. The first lead frame includes a first inner lead having a connecting surface to which one end of the first metal wire is connected. Among surfaces of the sealing body, in a side surface, a resin inlet mark is formed in a side surface portion from which the first lead frame and the second lead frame do not project, the resin inlet mark being greater in surface roughness than another area. The resin inlet mark is formed opposite to a side where the first metal wire is positioned on the connecting surface when seen in the direction along the mounting surface.
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