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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10204886B2

    公开(公告)日：2019-02-12

    申请号：US15766903

    申请日：2016-01-29

    申请人： Mitsubishi Electric Corporation

    发明人： Hiroshi Yoshida ,  Yuji Imoto ,  Hidetoshi Ishibashi ,  Daisuke Murata ,  Kenta Nakahara ,  Seiji Oka ,  Junji Fujino ,  Nobuhiro Asaji

    IPC分类号： H01L25/07 ,  H01L25/18 ,  H01L23/492 ,  C09D163/00 ,  B32B27/38

    摘要： A semiconductor device includes semiconductor chips fixed to a board, an insulating plate having a through-hole formed therein, a first lower conductor including a lower main body formed on the lower surface of the insulating plate and soldered to any of the semiconductor chips, and a lower protrusion portion that connects with the lower main body, and extends to the outside of the insulating plate, a second lower conductor formed on a lower surface of the insulating plate and soldered to any of the semiconductor chips, an upper conductor including an upper main body formed on the upper surface of the insulating plate, and an upper protrusion portion that connects with the upper main body and extends to the outside of the insulating plate, and a connection portion provided in the through-hole and connects the upper main body and the second lower conductor.

    Method of manufacturing power semiconductor device and power semiconductor device
    3.
    发明授权
    Method of manufacturing power semiconductor device and power semiconductor device 有权

    公开(公告)号：US11270982B2

    公开(公告)日：2022-03-08

    申请号：US16473100

    申请日：2017-01-30

    申请人： Mitsubishi Electric Corporation

    发明人： Norikazu Sakai ,  Hiroshi Yoshida ,  Hidetoshi Ishibashi ,  Nobuhiro Asaji

    IPC分类号： H01L25/07 ,  H01L21/48 ,  H01L23/492 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

    摘要： A metal mask is disposed on a copper base plate. A solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste on each of copper plates of the copper base plate. A semiconductor element and a conductive component are placed on the respective patterns of the solder pastes. A metal mask is disposed on the copper base plate. Then, a solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste covering each of the semiconductor element and the conductive component. A large-capacity relay board is disposed so as to come into contact with a corresponding pattern of the solder paste. A power semiconductor device is completed by performing heat treatment under a temperature condition of 200° C. or higher.