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公开(公告)号：US09583407B2
公开(公告)日：2017-02-28
申请号：US14953953
申请日：2015-11-30
IPC分类号： H01L23/31 , H01L23/053 , H01L23/10 , H01L23/13 , H01L23/498 , H01L23/373 , H01L23/057 , H01L23/29 , H01L23/00
CPC分类号： H01L23/053 , H01L23/057 , H01L23/10 , H01L23/13 , H01L23/293 , H01L23/3142 , H01L23/3735 , H01L23/49811 , H01L23/49838 , H01L23/49861 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/26175 , H01L2224/291 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49109 , H01L2224/73265 , H01L2224/83385 , H01L2224/83424 , H01L2224/83447 , H01L2924/00014 , H01L2924/3511 , H01L2924/014 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2924/00
摘要： A first conductor layer is provided on a first surface of an insulating plate, and has a first volume. A second conductor layer is provided on a second surface of the insulating plate, and has a second volume. A third conductor layer is provided on a second surface of the insulating plate, and has a second volume. The third conductor layer has a mounting region thicker than the second conductor layer. The sum of the second and third volumes is greater than or equal to 70% and smaller than or equal to 130% of the first volume. A semiconductor chip is provided on the mounting region. A sealing part is formed of an insulator, and seals the semiconductor chip within a case.
摘要翻译： 第一导体层设置在绝缘板的第一表面上，并具有第一容积。 第二导体层设置在绝缘板的第二表面上，并具有第二体积。 第三导体层设置在绝缘板的第二表面上，并具有第二体积。 第三导体层具有比第二导体层厚的安装区域。 第二和第三体积的总和大于或等于第一体积的70％且小于或等于130％。 半导体芯片设置在安装区域上。 密封部由绝缘体形成，并将半导体芯片密封在壳体内。
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2.发明授权公开(公告)号：US11195770B2
公开(公告)日：2021-12-07
申请号：US16558389
申请日：2019-09-03
发明人： Kenta Nakahara , Akitoshi Shirao
IPC分类号： H01L23/31 , H01L21/56 , H01L23/498 , H01L23/00 , H01L23/29 , H02M7/44 , B29K63/00 , H02P27/08 , B29C67/04 , B29L31/34
摘要： A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.
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公开(公告)号：US10325895B2
公开(公告)日：2019-06-18
申请号：US15459982
申请日：2017-03-15
发明人： Kenta Nakahara
IPC分类号： H01L25/18 , H01L23/495 , H01L23/00 , H02H9/04 , H01L23/373 , H01L29/16 , H01L29/739 , H01L29/78
摘要： It is an object of the present invention to provide a semiconductor module in which a bonded portion has high reliability, and that has a small area. A semiconductor module includes a plurality of metal plates extending in a horizontal direction and stacked in a vertical direction, at least one switching element, and at least one circuit element. The at least one switching element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. The at least one circuit element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. Disposed between the plurality of metal plates is an insulating material. At least one of the plurality of metal plates is bonded to the at least one switching element and the at least one circuit element.
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公开(公告)号：US11664288B2
公开(公告)日：2023-05-30
申请号：US17459014
申请日：2021-08-27
发明人： Kenta Nakahara , Akitoshi Shirao
IPC分类号： H01L21/56 , H01L23/31 , H01L23/498 , H01L23/00 , H01L23/29 , H02M7/44 , B29K63/00 , H02P27/08 , B29C67/04 , B29L31/34
CPC分类号： H01L23/3121 , H01L21/565 , H01L23/293 , H01L23/49838 , H01L24/40 , H01L24/84 , H02M7/44 , B29C67/04 , B29K2063/00 , B29L2031/3406 , H01L24/32 , H01L24/73 , H01L2224/32225 , H01L2224/40155 , H01L2224/40505 , H01L2224/73263 , H01L2224/8484 , H01L2924/01029 , H01L2924/01047 , H02P27/08
摘要： A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.
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5.发明授权公开(公告)号：US11171068B2
公开(公告)日：2021-11-09
申请号：US16558389
申请日：2019-09-03
发明人： Kenta Nakahara , Akitoshi Shirao
IPC分类号： H01L23/31 , H01L21/56 , H01L23/498 , H01L23/00 , H01L23/29 , H02M7/44 , B29K63/00 , H02P27/08 , B29C67/04 , B29L31/34
摘要： A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.
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公开(公告)号：US10515863B2
公开(公告)日：2019-12-24
申请号：US15897178
申请日：2018-02-15
发明人： Kenta Nakahara
IPC分类号： H01L23/053 , H01L23/10 , H01L23/24 , H01L23/40 , H01L23/00 , H02M1/08 , H02M7/5395
摘要： According to the present invention, a power module includes an insulating substrate, a semiconductor device provided on the insulating substrate, an internal terminal provided on the insulating substrate and electrically connected to the semiconductor device, a sealing material that seals the internal terminal, the semiconductor device and the insulating substrate so that an end portion of the internal terminal is exposed, a case that is separate from the sealing material and covers the sealing material and an elastic member that connects the case and the end portion of the internal terminal.
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公开(公告)号：US12051636B2
公开(公告)日：2024-07-30
申请号：US17632164
申请日：2019-10-16
发明人： Kenta Nakahara
IPC分类号： H01L23/373 , H01L23/367 , H01L25/18 , H01L23/00 , H01L23/31
CPC分类号： H01L23/373 , H01L23/3675 , H01L23/3735 , H01L25/18 , H01L23/3121 , H01L24/48 , H01L24/49 , H01L2224/48091 , H01L2224/48101 , H01L2224/48106 , H01L2224/48108 , H01L2224/48137 , H01L2224/48229 , H01L2224/49175
摘要： It is an object of the present invention to improve a heat radiation property of a metal wire on a semiconductor chip in a power module. A power module includes: a plurality of metal wires connected to a surface of at least one semiconductor chip; and a thermal conductive sheet having contact with the metal wire. The metal wire includes: at least one first metal wire connecting a surface of the semiconductor chip and a circuit pattern and at least one second metal wire connecting two points on the surface of the semiconductor chip and having the same potential as the first metal wire. The thermal conductive sheet includes a graphite sheet, and a sheet surface of the thermal conductive sheet has contact with the at least one first metal wire and the at least one second metal wire.
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公开(公告)号：US10971424B2
公开(公告)日：2021-04-06
申请号：US16208620
申请日：2018-12-04
IPC分类号： H01L23/373 , H01L23/367 , H01L23/13 , H01L23/00 , H01L23/043 , H01L23/24 , H01L25/07
摘要： A power module includes a recessed base plate having a hollow portion, at least one insulating substrate disposed in the hollow portion of the base plate, at least one semiconductor chip mounted on the at least one insulating substrate, and sealing resin for sealing a surface of the hollow portion side of the base plate, the at least one insulating substrate, and the at least one semiconductor chip.
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公开(公告)号：US10204886B2
公开(公告)日：2019-02-12
申请号：US15766903
申请日：2016-01-29
发明人： Hiroshi Yoshida , Yuji Imoto , Hidetoshi Ishibashi , Daisuke Murata , Kenta Nakahara , Seiji Oka , Junji Fujino , Nobuhiro Asaji
IPC分类号： H01L25/07 , H01L25/18 , H01L23/492 , C09D163/00 , B32B27/38
摘要： A semiconductor device includes semiconductor chips fixed to a board, an insulating plate having a through-hole formed therein, a first lower conductor including a lower main body formed on the lower surface of the insulating plate and soldered to any of the semiconductor chips, and a lower protrusion portion that connects with the lower main body, and extends to the outside of the insulating plate, a second lower conductor formed on a lower surface of the insulating plate and soldered to any of the semiconductor chips, an upper conductor including an upper main body formed on the upper surface of the insulating plate, and an upper protrusion portion that connects with the upper main body and extends to the outside of the insulating plate, and a connection portion provided in the through-hole and connects the upper main body and the second lower conductor.
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公开(公告)号：US10923410B2
公开(公告)日：2021-02-16
申请号：US16208620
申请日：2018-12-04
IPC分类号： H01L23/373 , H01L23/367 , H01L23/13 , H01L23/00 , H01L23/043 , H01L23/24 , H01L25/07
摘要： A power module includes a recessed base plate having a hollow portion, at least one insulating substrate disposed in the hollow portion of the base plate, at least one semiconductor chip mounted on the at least one insulating substrate, and sealing resin for sealing a surface of the hollow portion side of the base plate, the at least one insulating substrate, and the at least one semiconductor chip.
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