摘要:
The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process.
摘要:
At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.
摘要:
A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.
摘要:
The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process.
摘要:
A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.
摘要:
An apparatus for plasma etching comprises a chamber, a gas inlet port provided in the chamber to introduce etching gas into the chamber, a gas outlet port provided in a side portion of the chamber to exhaust the gas from said chamber, a sample stage provided within the chamber, and a spiral coil disposed externally of the chamber and in opposing relation with the sample stage to generate a plasma composed of the etching gas with a high-frequency induction field. The higher-voltage region of the spiral coil and the exhaust-side region of the sample stage are positioned on substantially the same side relative to the center axis of the chamber.
摘要:
An apparatus for plasma etching comprises a chamber, a gas inlet port provided in the chamber to introduce etching gas into the chamber, a gas outlet port provided in a side portion of the chamber to exhaust the gas from said chamber, a sample stage provided within the chamber, and a spiral coil disposed externally of the chamber and in opposing relation with the sample stage to generate a plasma composed of the etching gas with a high-frequency induction field. The higher-voltage region of the spiral coil and the exhaust-side region of the sample stage are positioned on substantially the same side relative to the center axis of the chamber.
摘要:
The plasma processing apparatus is provided with a chamber comprising a dielectric wall at the position opposing an object to be processed. A flat coil arranged exterior of the dielectric wall creates an induction magnetic field for generating the plasma. A plate-shaped electrode capable of functioning as a Faraday shield is arranged between the flat coil and the dielectric wall. And the apparatus provide with a heating unit configured to heat the periphery of the dielectric wall. The apparatus can prevent reaction products from adhering to the periphery of a dielectric wall by increasing the periphery temperature of the dielectric wall during an etching process, and suppressing the generation of particles.
摘要:
In a chamber, there are provided a sample stage on which a semiconductor substrate is placed, a gas inlet port for introducing etching gas, and a gas outlet port for exhausting the gas. A slide valve having a valve element which rotates relative to a valve seat is provided between the sample stage and the gas outlet port to adjust the amount of gas exhausted from the gas outlet port with the rotation of the valve element. A spiral coil for generating a high-frequency induction field and thereby changing the etching gas into a plasma is rotatably provided over the chamber. Rotative driving means rotates the spiral coil in response to the rotation of the valve element of the slide valve such that the higher-voltage region of the spiral coil approximately coincides with the exhaust-side region of the slide valve.
摘要:
After an organic bottom anti-reflective coating (12) is deposited on an underlying film (11), a resist pattern (15) is formed on the organic bottom anti-reflective coating (12). Dry etching is performed with respect to the organic bottom anti-reflective coating (12) masked with the resist pattern (15) to form an anti-reflective coating pattern. The dry-etching of the organic bottom anti-reflective coating (12) is performed by using etching gas containing gas having the S component such as SO2/O2-based etching gas or COS/O2-based etching gas.
摘要翻译:在有机底部抗反射涂层(12)沉积在下面的膜(11)上之后,在有机底部抗反射涂层(12)上形成抗蚀剂图案(15)。 相对于用抗蚀剂图案(15)掩蔽的有机底部防反射涂层(12)进行干蚀刻以形成抗反射涂层图案。 有机底部防反射涂层(12)的干蚀刻是通过使用含有S成分的气体的蚀刻气体,例如基于SO 2 / O 2的蚀刻气体或COS / O2系蚀刻气体进行的。