公开(公告)号：US4373975A

公开(公告)日：1983-02-15

申请号：US228476

申请日：1981-01-26

申请人： Mitsuo Nanba ,  Masahiko Ogirima ,  Hirotsugu Kozuka ,  Akira Shintani

发明人： Mitsuo Nanba ,  Masahiko Ogirima ,  Hirotsugu Kozuka ,  Akira Shintani

IPC分类号： B01J19/00 ,  C30B31/06 ,  H01L21/22 ,  H01L21/223

CPC分类号： H01L21/223 ,  Y10S252/951 ,  Y10S438/909

摘要： Alumina or aluminum is arranged on, or in the vicinity of, a wafer surface into which an impurity, particularly antimony, is to be diffused, and the impurity is vapor-diffused.The impurity can be diffused in much larger quantities than in a prior art vapor diffusion, and a very low sheet resistance for the diffused layer of antimony can be attained.

摘要翻译： 氧化铝或铝布置在杂质特别是锑扩散的晶片表面上或其附近，并且杂质蒸气扩散。 杂质可以比现有技术的蒸气扩散扩散得更多，并且可以获得用于扩散锑层的非常低的薄层电阻。

公开(公告)号：US4609407A

公开(公告)日：1986-09-02

申请号：US563036

申请日：1983-12-19

申请人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

发明人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

IPC分类号： H01L21/268 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/04 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L21/8221 ,  H01L21/268 ,  H01L27/0233 ,  H01L27/0688 ,  H01L29/04

摘要： Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

摘要翻译： 这里公开了一种半导体器件，其具有形成在单晶半导体膜中的至少一个下电阻区域，该至少一个下电阻区域被形成为连续地涂覆单晶半导体衬底和形成在衬底表面上的绝缘膜。 由于使用上述单晶半导体膜，因此可以获得从现有技术的半导体器件中获得的许多优点。 通过用激光束照射多晶或非晶半导体膜来形成上述单晶半导体膜。

公开(公告)号：US4187109A

公开(公告)日：1980-02-05

申请号：US652174

申请日：1976-01-26

申请人： Koichi Megumi ,  Hirotsugu Kozuka ,  Masayoshi Kobayashi ,  Yoshio Furuhata

发明人： Koichi Megumi ,  Hirotsugu Kozuka ,  Masayoshi Kobayashi ,  Yoshio Furuhata

IPC分类号： G11C11/42 ,  C09K3/00 ,  G02F1/03 ,  G02F1/05 ,  G03C1/725 ,  G03H1/00 ,  G11C13/04 ,  H01B3/12 ,  G03C1/76 ,  G03C1/00

CPC分类号： G03C1/725 ,  G02F1/0541 ,  G11C13/048

摘要： An optical element is composed of a single crystal of strontium barium niobate doped with a transition metal element such as cerium, vanadium or uranium. This element has the property of undergoing very sensitively a change in its refractive index by the application of a beam of light of specific wavelength.

摘要翻译： 光学元件由掺杂有过渡金属元素如铈，钒或铀的铌酸钡锶单晶构成。 该元件具有通过施加特定波长的光束而非常敏感地折射率变化的性质。