公开(公告)号：US4373975A

公开(公告)日：1983-02-15

申请号：US228476

申请日：1981-01-26

申请人： Mitsuo Nanba ,  Masahiko Ogirima ,  Hirotsugu Kozuka ,  Akira Shintani

发明人： Mitsuo Nanba ,  Masahiko Ogirima ,  Hirotsugu Kozuka ,  Akira Shintani

IPC分类号： B01J19/00 ,  C30B31/06 ,  H01L21/22 ,  H01L21/223

CPC分类号： H01L21/223 ,  Y10S252/951 ,  Y10S438/909

摘要： Alumina or aluminum is arranged on, or in the vicinity of, a wafer surface into which an impurity, particularly antimony, is to be diffused, and the impurity is vapor-diffused.The impurity can be diffused in much larger quantities than in a prior art vapor diffusion, and a very low sheet resistance for the diffused layer of antimony can be attained.

摘要翻译： 氧化铝或铝布置在杂质特别是锑扩散的晶片表面上或其附近，并且杂质蒸气扩散。 杂质可以比现有技术的蒸气扩散扩散得更多，并且可以获得用于扩散锑层的非常低的薄层电阻。

公开(公告)号：US5227329A

公开(公告)日：1993-07-13

申请号：US753650

申请日：1991-08-30

申请人： Takashi Kobayashi ,  Shimpei Iijima ,  Atsushi Hiraiwa ,  Nobuyoshi Kobayashi ,  Takashi Hashimoto ,  Mitsuo Nanba

发明人： Takashi Kobayashi ,  Shimpei Iijima ,  Atsushi Hiraiwa ,  Nobuyoshi Kobayashi ,  Takashi Hashimoto ,  Mitsuo Nanba

IPC分类号： H01L21/205 ,  H01L21/225 ,  H01L21/285 ,  H01L21/331 ,  H01L21/336 ,  H01L21/768 ,  H01L29/08 ,  H01L29/10 ,  H01L29/45

CPC分类号： H01L29/66287 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/2257 ,  H01L21/28525 ,  H01L21/76877 ,  H01L29/0804 ,  H01L29/0847 ,  H01L29/1004 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66272 ,  H01L29/66575 ,  H01L29/66757 ,  Y10S148/144

摘要： A boron doped amorphous silicon film is formed by CVD under the conditions of a pressure lower than 1 atm and a temperature higher than 200.degree. C. and lower than 400.degree. C. by using at least one of disilane and trisilane, and diborane as source gases. Since the resultant amorphous silicon film can diffuse impurities at a lower temperature than in the case of the polycrystalline silicon film formed by the conventional method, a pn junction much shallower than in the prior art can be formed.

摘要翻译： 通过使用乙硅烷和丙硅烷中的至少一种，乙硼烷作为源，通过CVD在低于1atm的压力和高于200℃，低于400℃的温度的条件下形成硼掺杂的非晶硅膜 气体。 由于所得到的非晶硅膜可以在比通过常规方法形成的多晶硅膜的情况下更低的温度下扩散杂质，所以可以形成比现有技术浅得多的pn结。

公开(公告)号：US06625549B1

公开(公告)日：2003-09-23

申请号：US09786924

申请日：2001-08-01

申请人： Motoyuki Nawa ,  Mitsuo Nanba

发明人： Motoyuki Nawa ,  Mitsuo Nanba

IPC分类号： G01F1100

CPC分类号： G01F15/002 ,  G01F1/66 ,  G01F1/667 ,  G01F13/006 ,  G01F15/063

摘要： An equipment specifying system of the present invention includes: a flow path for supplying gas to a plurality of pieces of equipment; an ultrasonic propagation signal measuring section for measuring a propagation signal based on a time during which an ultrasonic wave propagates across the flow path; a signal pattern generation section for generating a signal pattern based on a change in a propagation signal; a signal pattern storage section for previously storing a plurality of signal patterns respectively corresponding to a plurality of pieces of equipment; a signal pattern comparison section for comparing a signal pattern generated by the signal pattern generation section with a plurality of signal patterns previously stored in the signal pattern storage section; and an equipment specifying section for specifying currently used equipment among a plurality of pieces of equipment, in accordance with the comparison results obtained by the signal pattern comparison section.

摘要翻译： 本发明的设备指定系统包括：用于向多个设备供应气体的流路; 超声波传播信号测定部，其根据超声波在该流路上传播的时间，测定传播信号; 信号图案生成部，其基于传播信号的变化来生成信号图案; 信号图案存储部分，用于预先存储分别对应于多个设备的多个信号模式; 信号图案比较部，用于将由信号图案生成部生成的信号图案与预先存储在信号图案存储部中的多个信号图案进行比较; 以及根据由信号图案比较部获得的比较结果，在多个设备中指定当前使用的设备的设备指定部分。

公开(公告)号：US5109263A

公开(公告)日：1992-04-28

申请号：US556365

申请日：1990-07-24

申请人： Mitsuo Nanba ,  Tohru Nakamura ,  Kazuo Nakazato ,  Takeo Shiba ,  Katsuyoshi Washio ,  Kiyoji Ikeda ,  Takahiro Onai ,  Masatada Horiuchi

发明人： Mitsuo Nanba ,  Tohru Nakamura ,  Kazuo Nakazato ,  Takeo Shiba ,  Katsuyoshi Washio ,  Kiyoji Ikeda ,  Takahiro Onai ,  Masatada Horiuchi

IPC分类号： H01L21/331 ,  H01L21/762 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/76229 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/732

摘要： A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.

摘要翻译： 发射极和隔离区域之间的距离保持在由发射极深度和基底宽度（即，基底在深度方向上的厚度）确定的范围内的垂直双极晶体管布置。 这样可以防止发射器的载波被捕获到内部，从而防止截止频率的下降。

公开(公告)号：US5237200A

公开(公告)日：1993-08-17

申请号：US833759

申请日：1992-02-11

申请人： Mitsuo Nanba ,  Tohru Nakamura ,  Nakazato Kazuo ,  Takeo Shiba ,  Katsuyoshi Washio ,  Kiyoji Ikeda ,  Takahiro Onai ,  Masatada Horiuchi

发明人： Mitsuo Nanba ,  Tohru Nakamura ,  Nakazato Kazuo ,  Takeo Shiba ,  Katsuyoshi Washio ,  Kiyoji Ikeda ,  Takahiro Onai ,  Masatada Horiuchi

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L21/762 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/28525 ,  H01L21/76229 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/732

摘要： A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.

摘要翻译： 发射极和隔离区域之间的距离保持在由发射极深度和基底宽度（即，基底在深度方向上的厚度）确定的范围内的垂直双极晶体管布置。 这样可以防止发射器的载波被捕获到内部，从而防止截止频率的下降。

公开(公告)号：US4584421A

公开(公告)日：1986-04-22

申请号：US593369

申请日：1984-03-26

申请人： Kiyoshi Saito ,  Mitsuo Nanba

发明人： Kiyoshi Saito ,  Mitsuo Nanba

IPC分类号： C10G1/10

CPC分类号： C10G1/10

摘要： Plastic scraps are subjected to thermal decomposition in the presence of zeolite type catalyst and converted into a liquid hydrocarbon oil.

摘要翻译： 塑料废料在沸石型催化剂存在下进行热分解，并转化为液态烃油。

公开(公告)号：US06725878B1

公开(公告)日：2004-04-27

申请号：US09786939

申请日：2001-08-01

申请人： Motoyuki Nawa ,  Shigeru Iwanaga ,  Mitsuo Nanba

发明人： Motoyuki Nawa ,  Shigeru Iwanaga ,  Mitsuo Nanba

IPC分类号： G01M328

CPC分类号： G01M3/2846 ,  G01M3/243 ,  Y10T137/5762 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8326 ,  Y10T137/87917

摘要： A gas leakage detection system includes a flow path, a dual mode valve disposed in the flow path, an ultrasonic measuring section including a pair of ultrasonic transducers, disposed in the flow path upstream from the dual mode valve, a flow rate calculation section for computing a flow rate based on a signal from the ultrasonic measuring section, and a control section for controlling the dual mode valve. The control section closes or opens the dual mode valve instantaneously, and the flow rate calculation section computes a flow rate when the dual mode valve is closed. Thus, gas leakage can be decided substantially without stopping a gas flow when a user is using the gas.

摘要翻译： 一种气体泄漏检测系统，包括流路，设置在流路中的双模式阀，超声波测量部，包括设置在双模阀上游的流路中的一对超声波换能器，流量计算部， 基于来自超声波测量部的信号的流量以及用于控制双模阀的控制部。 控制部分立即关闭或打开双模式阀，流量计算部分计算双模阀关闭时的流量。 因此，当用户使用气体时，可以基本上确定气体泄漏而不停止气体流动。

公开(公告)号：US06691582B1

公开(公告)日：2004-02-17

申请号：US09786925

申请日：2001-08-01

申请人： Motoyuki Nawa ,  Yukio Nagaoka ,  Mitsuo Nanba

发明人： Motoyuki Nawa ,  Yukio Nagaoka ,  Mitsuo Nanba

IPC分类号： G01F166

CPC分类号： G01N29/222 ,  G01N29/024 ,  G01N29/326 ,  G01N2291/011 ,  G01N2291/0215 ,  G01N2291/02836 ,  G01N2291/02881 ,  G01N2291/102

摘要： A gas type identification system includes: a flow path; an ultrasonic measurement section disposed in the flow path, the ultrasonic measurement section including a pair of ultrasonic transducers; a sound velocity calculation section for calculating a sound velocity of a gas flowing through the flow path based on a signal from the ultrasonic measurement section; a sound velocity memory section for previously storing a predetermined sound velocity; and a comparison section for comparing the sound velocity calculated by the sound velocity calculation section with the predetermined sound velocity previously stored in the sound velocity memory section.

摘要翻译： 气体类型识别系统包括：流路; 设置在流路中的超声波测量部，所述超声波测量部包括一对超声波换能器; 音速计算部，其基于来自超声波测量部的信号计算流过所述流路的气体的声速; 用于预先存储预定声速的声速存储部分; 以及比较部分，用于将由声速计算部分计算的声速与先前存储在声速存储部分中的预定声速进行比较。

公开(公告)号：US5214497A

公开(公告)日：1993-05-25

申请号：US681664

申请日：1991-04-08

申请人： Mitsuo Nanba ,  Masao Kondo ,  Takeo Shiba ,  Tohru Nakamura

发明人： Mitsuo Nanba ,  Masao Kondo ,  Takeo Shiba ,  Tohru Nakamura

IPC分类号： H01L27/06

CPC分类号： H01L27/0688

摘要： A semiconductor device including a polycrystalline silicone resistor which has a resistance of 40 k.OMEGA.-800 k.OMEGA. and which is formed by a polycrystalline silicon film having a specific resistivity of 0.01 .OMEGA..cm-0.1 .OMEGA..cm. The resistor having the above resistance, which has previously been difficult to fabricate, can be fabricated with a high accuracy, so it is very useful for several kinds of semiconductor integrated circuits such as bipolar memory.

摘要翻译： 一种半导体器件，包括具有40kΩ欧姆-800k欧姆电阻的多晶硅电阻器，其由比电阻率为0.01欧姆·厘米-1·0.1欧姆·厘米的多晶硅膜形成。 具有上述电阻的电阻器，其以前难以制造，可以以高精度制造，因此对于诸如双极存储器的几种半导体集成电路非常有用。