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公开(公告)号：US5401674A
公开(公告)日：1995-03-28
申请号：US258330
申请日：1994-06-10
IPC分类号： H01L21/285 , H01L21/265 , H01L21/283
CPC分类号： H01L21/28518 , Y10S148/019 , Y10S148/032 , Y10S148/034 , Y10S148/058
摘要： A method is provided for reducing growth of silicide and the temperatures necessary to produce silicide. Germanium is implanted at a concentration peak density depth below the midline and above the lower surface of a metal layer receiving the implant. Subsequent anneal causes germanide to occupy an area above growing silicide such that consumption of silicon atoms is reduced, and that silicide is formed to a controlled thickness.
摘要翻译： 提供了一种减少硅化物生长和生产硅化物所需的温度的方法。 以注入植入物的金属层的中线和下表面以上的浓度峰值密度深度注入锗。 随后的退火导致锗化物占据生长硅化物以上的区域，使得硅原子的消耗减少，并且将硅化物形成为受控的厚度。
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公开(公告)号：US5470794A
公开(公告)日：1995-11-28
申请号：US200628
申请日：1994-02-23
IPC分类号： H01L21/265 , H01L21/285 , H01L21/336 , H01L21/283
CPC分类号： H01L29/66575 , H01L21/26506 , H01L21/26526 , H01L21/28518 , Y10S148/019
摘要： An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method utilizes ion beam mixing by implanting germanium to a specific elevation level within a metal layer overlying a silicon contact region. The implanted germanium atoms impact upon and move a plurality of metal atoms through the metal-silicon interface and into a region residing immediately below the silicon (or polysilicon) surface. The metal atoms can therefore bond with silicon atoms to cause a pre-mixing of metal with silicon near the interface in order to enhance silicidation. Germanium is advantageously chosen as the irradiating species to ensure proper placement of the germanium and ensuing movement of dislodged metal atoms necessary for minimizing oxides left in the contact windows and lattice damage within the underlying silicon (or polysilicon).
摘要翻译： 提供了一种用于在半导体衬底上制造金属硅化物的改进方法。 该方法通过将锗注入到覆盖硅接触区域的金属层内的特定高度水平上来利用离子束混合。 植入的锗原子冲击并移动多个金属原子通过金属 - 硅界面并移动到位于硅（或多晶硅）表面正下方的区域中。 因此，为了增强硅化物，金属原子可以与硅原子键合以在界面附近引起金属与硅的预混合。 有利地，锗被选择为照射种类，以确保锗的适当放置和随后的移动的金属原子的移动，以使残留在接触窗口中的氧化物和底层硅（或多晶硅）中的晶格损伤最小化。
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3.发明授权Method for low energy implantation of argon to control titanium silicide formation 失效用于低能量注入氩气以控制硅化钛形成的方法
公开(公告)号：US5444024A
公开(公告)日：1995-08-22
申请号：US258542
申请日：1994-06-10
IPC分类号： H01L21/285 , H01L21/265 , H01L21/28
CPC分类号： H01L21/28518 , Y10S148/019 , Y10S148/144
摘要： A method is provided for controlling growth of silicide to a defined thickness based upon the relative position of peak concentration density depth within a layer of titanium. The titanium layer is deposited over silicon and namely over the silicon junction regions. Thereafter the titanium is implanted with argon ions. The argon ions are implanted at a peak concentration density level corresponding to a depth relative to the upper surface of the titanium. The peak concentration density depth can vary depending upon the dosage and implant energies of the ion implanter. Preferably, the peak concentration density depth is at a midpoint between the upper and lower surfaces of the titanium or at an elevational level beneath the midpoint and above the lower surface of the titanium. Subsequent anneal of the argon-implanted titanium causes the argon atoms to occupy a diffusion area normally taken by silicon consumed and growing within overlying titanium. However, based upon the presence of argon, the diffusion length and therefore the silicide thickness is reduced to a controllable amount necessary for applications with ultra-shallow junction depths.
摘要翻译： 提供了一种基于钛层内的峰浓度密度深度的相对位置来控制硅化物的规定厚度的方法。 钛层沉积在硅上，即在硅结区上。 之后，用氩离子注入钛。 以与钛的上表面相对应的深度的峰值浓度密度水平注入氩离子。 峰浓度密度深度可以根据离子注入机的剂量和植入能量而变化。 优选地，峰浓度密度深度处于钛的上表面和下表面之间的中点处，或者在钛的下表面上方的中点以上。 氩注入钛的后续退火导致氩原子占据通常被硅消耗并在上覆钛内生长的扩散区域。 然而，基于氩的存在，扩散长度以及因此的硅化物厚度减小到具有超浅结深度的应用所需的可控量。
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4.发明授权Method of fabricating semiconductor gate electrode with fluorine migration barrier 失效制造具有氟迁移屏障的半导体栅电极的方法
公开(公告)号：US5393676A
公开(公告)日：1995-02-28
申请号：US125421
申请日：1993-09-22
IPC分类号： H01L21/28 , H01L21/336 , H01L29/49 , H01L21/265
CPC分类号： H01L29/66575 , H01L21/28052 , H01L29/4916 , H01L29/4933 , H01L29/665
摘要： A PMOS device is provided having a diffusion barrier placed within a polysilicon gate material. The diffusion barrier is purposefully implanted to a deeper depth within the gate material than subsequently placed impurity dopants. The barrier comprises Ar atoms placed in fairly close proximity to one another within the gate conductor, and the impurity dopant comprises ions of BF.sub.2. F from the impurity dopant of BF.sub.2 is prevented from diffusing to underlying silicon-oxide bonds residing within the oxide bulk. By minimizing F migration to the bond sites, the present polysilicon barrier and method of manufacture can minimize oxygen dislodgment and recombination at the interface regions between the polysilicon and the gate oxide as well as between the gate oxide and silicon substrate.
摘要翻译： 提供PMOS器件，其具有放置在多晶硅栅极材料内的扩散势垒。 扩散阻挡层被有目的地植入到栅极材料内比之后放置的杂质掺杂物更深的深度。 势垒包括在栅极导体内彼此相当接近的Ar原子，杂质掺杂物包含BF 2的离子。 来自BF 2的杂质掺杂剂的F被阻止扩散到位于氧化物体内的下面的氧化硅键。 通过最小化F迁移到键合位置，本多晶硅势垒和制造方法可以使多晶硅和栅极氧化物之间以及栅极氧化物和硅衬底之间的界面区域处的氧分离和复合最小化。
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5.发明授权Semicondutor having selectively enhanced field oxide areas and method for producing same 失效具有选择性增强的场氧化物区域的半导体及其制造方法
公开(公告)号：US5661335A
公开(公告)日：1997-08-26
申请号：US515285
申请日：1995-08-15
IPC分类号： H01L21/265 , H01L21/762 , H01L23/58 , H01L29/00
CPC分类号： H01L21/26506 , H01L21/76213 , H01L2924/0002 , Y10S438/981
摘要： A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.
摘要翻译： 提供了一种场氧化物，其目的是利用植入的杂质物质的氟迁移率。 根据氧化物的尺寸（面积和厚度）可以增强或增厚氧化场。 来自杂质物质的氟提供氧 - 氧键位置处的氧的移出，导致在氧化物/底物界面处的氧复合。 在最初生长和植入之后，发生通过重组的氧化物的增稠。 因此，可以缩短初始热氧化以提高生产量。 因此，氟增强增稠效果可以补偿较短的热氧化时间。 此外，增厚的氧化物区域在现有的热生长氧化物的下面被钝化地氧化并且直接在氮化物之间的开口下方氧化。 因此，增稠的氧化物不会引起驻留在场氧化物之间的活性区域的额外收缩。
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6.发明授权Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer 失效使用具有溅射沉积的金属氮化物层的金属硅化物的集成电路制造
公开(公告)号：US5550084A
公开(公告)日：1996-08-27
申请号：US375126
申请日：1995-01-17
IPC分类号： H01L21/285 , H01L21/336 , H01L29/45 , H01L29/78 , H01L21/44 , H01L21/48
CPC分类号： H01L29/6659 , H01L21/28518 , H01L29/456 , H01L29/665 , H01L29/7833 , Y10S148/169
摘要： An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method advantageously places a film of metal nitride upon the metal layer. The metal nitride layer and metal layer are sputter deposited within the same chamber without removing the substrate from the vacuum so as to prevent oxygen or moisture from contaminating the metal layer and causing oxides to form thereon. Furthermore, the metal nitride layer is reactively sputter deposited in a nitrogen/argon ambient to allow precise amounts of nitrogen to be deposited across uneven surface topography directly adjacent to the underlying metal layer. Excess nitrogen purposefully deposited within the metal nitride layer consumes a controlled depth of metal bond sites within the underlying metal layer so as to limit the amount of silicidation from underlying silicon or polysilicon into the metal thereby substantially eliminating or minimizing silicide shorting problems.
摘要翻译： 提供了一种用于在半导体衬底上制造金属硅化物的改进方法。 该方法有利地将金属氮化物膜放置在金属层上。 金属氮化物层和金属层溅射沉积在相同的室内，而不从真空中去除衬底，以防止氧气或水分污染金属层并引起氧化物在其上形成。 此外，金属氮化物层在氮气/氩气环境中被反应溅射沉积，以允许精确量的氮沉积在与下面的金属层直接相邻的不平坦表面形貌之间。 有目的地沉积在金属氮化物层内的过多的氮消耗了下层金属层内的金属结合位置的受控深度，从而限制从底层硅或多晶硅到金属中的硅化物的量，从而基本上消除或最小化硅化物短路问题。
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7.发明授权Method of making a semiconductor having selectively enhanced field oxide areas 失效制造具有选择性增强的场氧化物区域的半导体的方法
公开(公告)号：US5372951A
公开(公告)日：1994-12-13
申请号：US131194
申请日：1993-10-01
IPC分类号： H01L21/265 , H01L21/762 , H01L21/266
CPC分类号： H01L21/26506 , H01L21/76213 , H01L2924/0002 , Y10S438/981
摘要： A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.
摘要翻译： 提供了一种场氧化物，其目的是利用植入的杂质物质的氟迁移率。 根据氧化物的尺寸（面积和厚度）可以增强或增厚氧化场。 来自杂质物质的氟提供氧 - 氧键位置处的氧的移出，导致在氧化物/底物界面处的氧复合。 在最初生长和植入之后，发生通过重组的氧化物的增稠。 因此，可以缩短初始热氧化以提高生产量。 因此，氟增强增稠效果可以补偿较短的热氧化时间。 此外，增厚的氧化物区域在现有的热生长氧化物的下面被钝化地氧化并且直接在氮化物之间的开口下方氧化。 因此，增稠的氧化物不会引起驻留在场氧化物之间的活性区域的额外收缩。
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8.发明授权Control mechanism for matching process parameters in a multi-chamber process tool 有权在多室工艺工具中匹配工艺参数的控制机制公开(公告)号：US06684122B1
公开(公告)日：2004-01-27
申请号：US09476892
申请日：2000-01-03
IPC分类号： G06F1900
CPC分类号： H01L21/67276 , G05B19/41875 , G05B2219/32182 , G05B2219/37576 , G05B2219/45031 , Y02P90/16 , Y02P90/22
摘要： The invention, in its various aspects and embodiments, is a method and apparatus for controlling the operation of a multi-chamber process tool in a semiconductor fabrication process. The method comprises setting a plurality of operation parameters for the conduct of a predetermined operation in each of a plurality of process chambers in a multi-chamber process tool; performing the predetermined operation in each of the process chambers; examining a physical characteristic of a processed wafer from each of the process chambers; determining from the examined physical characteristics whether the operating conditions in each of the process chambers match; and resetting at least one operating parameter so that the operating conditions in each of the process chambers will match. The apparatus comprises a processing tool, a review station, and a tool controller. The processing tool includes a plurality of process chambers and an operation controller. Each process chamber is capable of performing a predetermined operation defined by a plurality of operating parameters. The operation controller is capable of setting the operating parameter for each of the process chambers. The review station is capable of examining a physical characteristic of a processed wafer from each of the process chambers and outputting the results of the examination. The tool controller is capable of receiving the examination result, determining whether the operating parameters of the process chambers match, and instructing the operation controller to reset at least some of the operating parameters responsive thereto to match the operating conditions in the process chambers.
摘要翻译： 本发明在其各个方面和实施例中是用于在半导体制造工艺中控制多室工艺工具的操作的方法和装置。 该方法包括在多室处理工具中设置用于在多个处理室中的每一个中执行预定操作的多个操作参数; 在每个处理室中执行预定操作; 从每个处理室检查经处理的晶片的物理特性; 根据所检查的物理特性确定每个处理室中的操作条件是否匹配; 并且重置至少一个操作参数，使得每个处理室中的操作条件将匹配。 该装置包括处理工具，检查站和工具控制器。 处理工具包括多个处理室和操作控制器。 每个处理室能够执行由多个操作参数定义的预定操作。 操作控制器能够设置每个处理室的操作参数。 检查站能够从每个处理室检查处理的晶片的物理特性，并输出检查结果。 工具控制器能够接收检查结果，确定处理室的操作参数是否匹配，并指示操作控制器响应于此来重置至少一些操作参数以匹配处理室中的操作条件。
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公开(公告)号：US06650957B1
公开(公告)日：2003-11-18
申请号：US09476696
申请日：2000-01-03
IPC分类号： G06F1900
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/45031 , Y02P90/20 , Y02P90/22
摘要： A method and an apparatus for controlling a deposition process in a manufacturing process. A process recipe setting step is performed. A process run of semiconductor devices is performed based upon the process recipe. Metrology data relating to the process run of semiconductor dev determination is made whether production results are within a predetermined tolerance level, based upon the metrology data. Process recipe settings are modified in response to a determination that the production results are within a predetermined tolerance level, based upon the metrology data. A processing tool is capable of receiving at least one control input parameter and a metrology data acquisition unit is interfaced with the processing tool and is capable of acquiring metrology data from the processing tool. A production data analysis unit is interfaced with the metrology data acquisition unit and is capable of analyzing the metrology data from the metrology data acquisition unit and a control input parameter adjustment unit is interfaced with the production data analysis unit and the processing tool and is capable of performing adjustments upon the control input parameter.
摘要翻译： 一种用于在制造过程中控制沉积工艺的方法和装置。 进行处理配方设定步骤。 基于工艺配方执行半导体器件的工艺流程。 基于测量数据，确定生产结果是否处于预定的容差水平内的与半导体开发测定的过程运行有关的计量数据。 响应于基于测量数据确定生产结果在预定容差水平内的过程配方设置被修改。 处理工具能够接收至少一个控制输入参数，并且测量数据获取单元与处理工具接口并且能够从处理工具获取测量数据。 生产数据分析单元与测量数据获取单元接口，并且能够分析来自计量数据获取单元的计量数据，并且控制输入参数调整单元与生产数据分析单元和处理工具接口，并且能够 对控制输入参数进行调整。
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公开(公告)号：US06284622B1
公开(公告)日：2001-09-04
申请号：US09426208
申请日：1999-10-25
申请人： William J. Campbell , H. Jim Fulford , Christopher H. Raeder , Craig W. Christian , Thomas Sonderman
发明人： William J. Campbell , H. Jim Fulford , Christopher H. Raeder , Craig W. Christian , Thomas Sonderman
IPC分类号： H01L2176
CPC分类号： H01L22/20 , H01L21/76229
摘要： A method for filling a trench is provided. A wafer having at least a first layer formed thereon is provided. A trench is formed in the first layer. The depth of the trench is measured. A target thickness is determined based on the depth of the trench. A second layer of the target thickness is formed over the trench. A processing line includes a trench etch tool, a first metrology tool, a trench fill tool, and an automatic process controller. The trench etch tool is adapted to form a trench in a first layer on a wafer. The first metrology tool is adapted to measure the depth of the trench. The trench fill tool is adapted to form a second layer over the first layer based on an operating recipe. An automatic process controller is adapted to determine a target thickness based on the depth of the trench and modify the operating recipe of the trench fill tool based on the target thickness.
摘要翻译： 提供了一种用于填充沟槽的方法。 提供了至少形成有第一层的晶片。 在第一层中形成沟槽。 测量沟槽的深度。 基于沟槽的深度确定目标厚度。 在沟槽上形成第二层目标厚度。 处理线包括沟槽蚀刻工具，第一计量工具，沟槽填充工具和自动过程控制器。 沟槽蚀刻工具适于在晶片上的第一层中形成沟槽。 第一个计量工具适用于测量沟槽的深度。 沟槽填充工具适于基于操作配方在第一层上形成第二层。 自动过程控制器适于基于沟槽的深度确定目标厚度，并且基于目标厚度修改沟槽填充工具的操作配方。
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