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1.发明授权System for resetting sensor magnetization in a spin valve magnetoresistive sensor 失效用于在自旋阀磁阻传感器中复位传感器磁化的系统
公开(公告)号：US5650887A
公开(公告)日：1997-07-22
申请号：US606625
申请日：1996-02-26
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B20/10 , G11B2005/0008 , G11B2005/3996 , G11B5/3903
摘要： Sensors based on the giant magnetoresistance effect, specifically "spin valve" (SV) magnetoresistive sensors, have applications as external magnetic field sensors and as read heads in magnetic recording systems, such as rigid disk drives. These sensors have a ferromagnetic layer whose magnetization orientation is fixed or pinned by being exchange coupled to an antiferromagnetic layer. The magnetization of the pinned layer will become misaligned and the sensor will experience an abnormal response to the field being sensed, i.e., the external magnetic field or the recorded data in the magnetic media, if an adverse event elevates the antiferromagnetic layer above its blocking temperature. A pinned layer mangetization reset system is incorporated into systems that use SV sensors. The reset system generates an electrical current waveform that is directed through the SV sensor with an initial current value sufficient to heat the antiferromagnetic layer above its blocking temperature, and a subsequent lower current value to generate a magnetic field around the pinned layer sufficient to properly orient the magnetization of the pinned layer while the antiferromagnetic layer is cooling below its blocking temperature. This process resets the magnetization of the pinned layer to its preferred orientation and returns the SV sensor response substantially back to its desired state.
摘要翻译： 基于巨磁电阻效应的传感器，特别是“自旋阀”（SV）磁阻传感器，可用作磁记录系统中的外部磁场传感器和读磁头，例如刚性磁盘驱动器。 这些传感器具有铁磁层，其磁化方向通过交换耦合到反铁磁层而固定或固定。 被钉扎层的磁化将变得不对准，如果不利的事件使反铁磁层升高到其阻挡温度以上，传感器将会感受到正被感测的场的异常响应，即外部磁场或磁性介质中的记录数据 。 固定层封装复位系统被并入使用SV传感器的系统中。 复位系统产生通过SV传感器的电流波形，其具有足以将反铁磁层加热到高于其阻挡温度的初始电流值，以及随后的较低电流值以产生围绕被钉扎层的足够的磁场以适当定向 当反铁磁层冷却到其阻挡温度以下时，被钉扎层的磁化强度。 该过程将钉扎层的磁化重置为其优选的取向，并使SV传感器响应基本上返回到其期望的状态。
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2.发明授权Method of making stabilized MR sensor and flux guide joined by contiguous junction 失效制造稳定的MR传感器和通过连接接头连接的助焊剂的方法
公开(公告)号：US5893981A
公开(公告)日：1999-04-13
申请号：US44358
申请日：1998-03-19
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3903 , G11B5/3919 , G11B5/3932 , G11B5/3163
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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公开(公告)号：US06239955B1
公开(公告)日：2001-05-29
申请号：US09280497
申请日：1999-03-30
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
IPC分类号： G11B539
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3163 , G11B5/3903 , G11B5/3919 , G11B5/3932
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous selfaligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过邻接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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4.发明授权公开(公告)号：US06181532B2
公开(公告)日：2001-01-30
申请号：US09280489
申请日：1999-03-30
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
IPC分类号： G11B539
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3163 , G11B5/3903 , G11B5/3919 , G11B5/3932
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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5.发明授权
公开(公告)号：US5930084A
公开(公告)日：1999-07-27
申请号：US672516
申请日：1996-06-17
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3903 , G11B5/3919 , G11B5/3932 , G11B5/3163
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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6.发明授权Method of forming a continuous free layer spin valve sensor with patterned exchange underlayer stabilization 失效形成具有图案交换底层稳定性的连续自由层自旋阀传感器的方法公开(公告)号：US06606782B2
公开(公告)日：2003-08-19
申请号：US10104778
申请日：2002-03-22
申请人： Tai Min , Po-Kang Wang , Moris Musa Dovek
发明人： Tai Min , Po-Kang Wang , Moris Musa Dovek
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
摘要翻译： 为了形成自旋阀装置，通过形成间隙层开始。 在缓冲层上形成具有耐火材料层的缓冲层。 包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层包括堆叠有铁磁层的下反铁磁层或者与永久磁性层堆叠的Cr层。 通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。 覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。 无形，固定，间隔和反铁磁层。 在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。
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7.发明授权Double self-aligned insulated contiguous junction for flux-guided-MR or yoke-MR head applications 失效用于磁通引导MR或磁轭磁头应用的双自对准绝缘连接结
公开(公告)号：US5867889A
公开(公告)日：1999-02-09
申请号：US829869
申请日：1997-04-01
CPC分类号： G11B5/3912 , G11B5/3163 , G11B5/39 , G11B5/3903 , G11B5/3916 , G11B5/3919 , G11B5/3922 , Y10T29/49043
摘要： A magnetoresistive (MR) head having a double self-aligned contiguous junction includes an MR sensor structure with a biased guide joined thereto. The guide is formed using a first resist mask applied over the MR sensor structure. A guide biasing structure is formed using the first resist mask and a second resist mask applied over the first resist mask and the guide. The first resist mask is configured to form a double self-aligned contiguous junction between the MR sensor structure and the guide and guide bias structure. In this manner, the position of the guide biasing structure is carefully controlled so that it does not overlap the MR sensor structure.
摘要翻译： 具有双自对准连续结的磁阻（MR）头包括具有与其连接的偏置引导件的MR传感器结构。 使用施加在MR传感器结构上的第一抗蚀剂掩模形成引导件。 使用第一抗蚀剂掩模和施加在第一抗蚀剂掩模和引导件上的第二抗蚀剂掩模形成引导偏置结构。 第一抗蚀剂掩模被配置为在MR传感器结构和引导和引导偏置结构之间形成双重自对准的连续结。 以这种方式，仔细地控制引导偏置结构的位置，使其不与MR传感器结构重叠。
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8.发明授权Continuous free layer spin valve sensor with patterned exchange underlayer stabilization 失效连续自由层旋转阀传感器，具有图案交换底层稳定性公开(公告)号：US06943995B2
公开(公告)日：2005-09-13
申请号：US10616724
申请日：2003-07-10
申请人： Tai Min , Po-Kang Wang , Moris Musa Dovek
发明人： Tai Min , Po-Kang Wang , Moris Musa Dovek
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
摘要翻译： 为了形成自旋阀装置，通过形成间隙层开始。 在缓冲层上形成具有耐火材料层的缓冲层。 包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层，包括堆叠有铁磁层的下反铁磁层或与永久磁性层堆叠的Cr层。 通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。 覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。 无形，固定，间隔和反铁磁层。 在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。
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9.发明授权公开(公告)号：US06607923B2
公开(公告)日：2003-08-19
申请号：US09034457
申请日：1998-03-04
IPC分类号： H01L2100
CPC分类号： G11B5/6005 , G11B5/255 , G11B5/3967
摘要： A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.
摘要翻译： 形成在硬电绝缘基板上并具有静电放电保护的磁阻读/磁写磁头组件包括：硬电绝缘基板，优选由蓝宝石或氧化铝-TiC形成; 多个氧化铝层形成在衬底上; 定位在氧化铝层之间的磁阻读/写写头; 由所述基板支撑的硅层; 以及集成到硅层中并与所述磁阻读/写感应写头互连的半导体电路，以向头提供静电放电保护。 当作为蓝宝石实施时，硅层可以在衬底上外延生长，或者当被实施为氧化铝-TiC时，结合到衬底上。 硬电绝缘基板和氧化铝层为组装提供了具有大致均匀研磨和蚀刻特性以及优异的耐久性的硬质空气轴承表面。
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10.发明授权
公开(公告)号：US5757591A
公开(公告)日：1998-05-26
申请号：US756294
申请日：1996-11-25
CPC分类号： G11B5/6005 , G11B5/255 , G11B5/3967
摘要： A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.
摘要翻译： 形成在硬电绝缘基板上并具有静电放电保护的磁阻读/磁写磁头组件包括：硬电绝缘基板，优选由蓝宝石或氧化铝-TiC形成; 多个氧化铝层形成在衬底上; 定位在氧化铝层之间的磁阻读/写写头; 由所述基板支撑的硅层; 以及集成到硅层中并与所述磁阻读/写感应写头互连的半导体电路，以向头提供静电放电保护。 当作为蓝宝石实施时，硅层可以在衬底上外延生长，或者当被实施为氧化铝-TiC时，结合到衬底上。 硬电绝缘基板和氧化铝层为组装提供了具有大致均匀研磨和蚀刻特性以及优异的耐久性的硬质空气轴承表面。
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