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1.发明授权System for resetting sensor magnetization in a spin valve magnetoresistive sensor 失效用于在自旋阀磁阻传感器中复位传感器磁化的系统
公开(公告)号：US5650887A
公开(公告)日：1997-07-22
申请号：US606625
申请日：1996-02-26
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B20/10 , G11B2005/0008 , G11B2005/3996 , G11B5/3903
摘要： Sensors based on the giant magnetoresistance effect, specifically "spin valve" (SV) magnetoresistive sensors, have applications as external magnetic field sensors and as read heads in magnetic recording systems, such as rigid disk drives. These sensors have a ferromagnetic layer whose magnetization orientation is fixed or pinned by being exchange coupled to an antiferromagnetic layer. The magnetization of the pinned layer will become misaligned and the sensor will experience an abnormal response to the field being sensed, i.e., the external magnetic field or the recorded data in the magnetic media, if an adverse event elevates the antiferromagnetic layer above its blocking temperature. A pinned layer mangetization reset system is incorporated into systems that use SV sensors. The reset system generates an electrical current waveform that is directed through the SV sensor with an initial current value sufficient to heat the antiferromagnetic layer above its blocking temperature, and a subsequent lower current value to generate a magnetic field around the pinned layer sufficient to properly orient the magnetization of the pinned layer while the antiferromagnetic layer is cooling below its blocking temperature. This process resets the magnetization of the pinned layer to its preferred orientation and returns the SV sensor response substantially back to its desired state.
摘要翻译： 基于巨磁电阻效应的传感器，特别是“自旋阀”（SV）磁阻传感器，可用作磁记录系统中的外部磁场传感器和读磁头，例如刚性磁盘驱动器。 这些传感器具有铁磁层，其磁化方向通过交换耦合到反铁磁层而固定或固定。 被钉扎层的磁化将变得不对准，如果不利的事件使反铁磁层升高到其阻挡温度以上，传感器将会感受到正被感测的场的异常响应，即外部磁场或磁性介质中的记录数据 。 固定层封装复位系统被并入使用SV传感器的系统中。 复位系统产生通过SV传感器的电流波形，其具有足以将反铁磁层加热到高于其阻挡温度的初始电流值，以及随后的较低电流值以产生围绕被钉扎层的足够的磁场以适当定向 当反铁磁层冷却到其阻挡温度以下时，被钉扎层的磁化强度。 该过程将钉扎层的磁化重置为其优选的取向，并使SV传感器响应基本上返回到其期望的状态。
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2.发明授权Method of making stabilized MR sensor and flux guide joined by contiguous junction 失效制造稳定的MR传感器和通过连接接头连接的助焊剂的方法
公开(公告)号：US5893981A
公开(公告)日：1999-04-13
申请号：US44358
申请日：1998-03-19
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3903 , G11B5/3919 , G11B5/3932 , G11B5/3163
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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3.发明授权
公开(公告)号：US5930084A
公开(公告)日：1999-07-27
申请号：US672516
申请日：1996-06-17
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3903 , G11B5/3919 , G11B5/3932 , G11B5/3163
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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公开(公告)号：US06239955B1
公开(公告)日：2001-05-29
申请号：US09280497
申请日：1999-03-30
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
IPC分类号： G11B539
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3163 , G11B5/3903 , G11B5/3919 , G11B5/3932
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous selfaligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过邻接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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5.发明授权公开(公告)号：US06181532B2
公开(公告)日：2001-01-30
申请号：US09280489
申请日：1999-03-30
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
IPC分类号： G11B539
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3163 , G11B5/3903 , G11B5/3919 , G11B5/3932
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。
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6.发明授权Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor 失效旋转阀磁阻传感器具有反平行钉扎层和改进的交换偏置层，以及使用传感器的磁记录系统
公开(公告)号：US5701223A
公开(公告)日：1997-12-23
申请号：US697396
申请日：1996-08-23
申请人： Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Tsann Lin , Virgil Simon Speriosu , Ching Hwa Tsang , Dennis Richard Wilhoit
发明人： Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Tsann Lin , Virgil Simon Speriosu , Ching Hwa Tsang , Dennis Richard Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3272 , H01L43/10 , G11B2005/3996
摘要： A spin valve magnetoresistive (SVMR) sensor uses a laminated antiparallel (AP) pinned layer in combination with an improved antiferromagnetic (AF) exchange biasing layer. The pinned layer comprises two ferromagnetic films separated by a nonmagnetic coupling film such that the magnetizations of the two ferromagnetic films are strongly coupled together antiferromagnetically in an antiparallel orientation. This laminated AP pinned layer is magnetically rigid in the small field excitations required to rotate the SVMR sensor's free layer. When the magnetic moments of the two ferromagnetic layers in this AP pinned layer are nearly the same, the net magnetic moment of the pinned layer is small. However, the exchange field is correspondingly large because it is inversely proportional to the net magnetic moment. The laminated AP pinned layer has its magnetization fixed or pinned by an AF material that is highly corrosion resistant but that has an exchange anisotropy too low to be usable in conventional SVMR sensors. In the preferred embodiment the AF layer is nickel-oxide and is formed on one of the magnetoresistive (MR) shields that serves as the substrate. Thus the AF material also serves as the insulating MR gap material. The location of the AF layer and the laminated AP-pinned layer to which it is exchange coupled on the bottom of the SVMR sensor allows for improved longitudinal biasing of the free layer when the SVMR sensor is fabricated.
摘要翻译： 自旋阀磁阻（SVMR）传感器使用层叠反平行（AP）钉扎层与改进的反铁磁（AF）交换偏置层组合。 被钉扎层包括由非磁性耦合膜分离的两个铁磁膜，使得两个铁磁膜的磁化强烈耦合在反铁磁反向反平行取向。 该层压AP钉扎层在旋转SVMR传感器自由层所需的小场激励中是磁性刚性的。 当该AP钉扎层中的两个铁磁层的磁矩几乎相同时，被钉扎层的净磁矩小。 然而，交换场相当大，因为它与净磁矩成反比。 层压的AP钉扎层的磁化固定或由AF材料固定，该材料具有高度耐腐蚀性，但具有太低的交换各向异性，无法在传统的SVMR传感器中使用。 在优选实施例中，AF层是氧化镍，并且形成在用作衬底的磁阻（MR）屏蔽之一上。 因此，AF材料也用作绝缘MR间隙材料。 在SVMR传感器的底部上交换耦合的AF层和层压的AP钉扎层的位置允许在制造SVMR传感器时改善自由层的纵向偏置。
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7.发明授权Atomic force microscope system with cantilever having unbiased spin valve magnetoresistive strain gauge 失效具有悬臂的原子力显微镜系统，具有无偏旋转阀磁阻应变仪
公开(公告)号：US5856617A
公开(公告)日：1999-01-05
申请号：US922210
申请日：1997-09-02
CPC分类号： G01Q20/04 , B82Y35/00 , G11B9/1409 , G11B9/1418 , Y10S977/849 , Y10S977/851 , Y10S977/863 , Y10S977/873
摘要： An atomic force microscope (AFM) uses a spin valve magnetoresistive strain gauge formed on the AFM cantilever to detect deflection of the cantilever. The spin valve strain gauge operates in the absence of an applied magnetic field. The spin valve strain gauge is formed on the AFM cantilever as a plurality of films, one of which is a free ferromagnetic layer that has nonzero magnetostriction and whose magnetic moment is free to rotate in the presence of an applied magnetic field. In the presence of an applied stress to the free ferromagnetic layer due to deflection of the cantilever, an angular displacement of the magnetic moment of the free ferromagnetic layer occurs, which results in a change in the electrical resistance of the spin valve strain gauge. Electrical resistance detection circuitry coupled to the spin valve strain gauge is used to determine cantilever deflection.
摘要翻译： 原子力显微镜（AFM）使用形成在AFM悬臂上的自旋阀磁阻应变仪来检测悬臂的偏转。 自旋阀应变计在没有施加磁场的情况下工作。 自旋阀应变计形成在AFM悬臂上作为多个膜，其中之一是具有非零磁致伸缩的自由铁磁层，并且在施加的磁场的存在下其磁矩自由旋转。 在由于悬臂的偏转而对自由铁磁层施加的应力的存在下，发生自由铁磁层的磁矩的角位移，这导致自旋阀应变计的电阻的变化。 耦合到自旋阀应变仪的电阻检测电路用于确定悬臂偏转。
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公开(公告)号：US5828530A
公开(公告)日：1998-10-27
申请号：US857425
申请日：1997-05-16
申请人： Hardayal Singh Gill , Bruce A. Gurney , Joseph Francis Smyth , Virgil Simon Speriosu , Douglas Johnson Werner
发明人： Hardayal Singh Gill , Bruce A. Gurney , Joseph Francis Smyth , Virgil Simon Speriosu , Douglas Johnson Werner
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3912 , G11B5/3967 , G11B2005/0018 , G11B2005/3996
摘要： An orthogonal spin valve read head is provided wherein a spin valve sensor is asymmetrically located between first and second shield layers so that image currents in the first and second shield layers produce a resultant image field which partially or completely counterbalances a stiffening field from antiferromagnetic, pinned and spacer layers in the MR sensor when sense current is conducted therethrough. Accordingly, the spin valve sensor may be located a greater distance from the second shield layer by providing a mid-gap layer between the spin valve sensor and a second gap layer. In one example, the total thickness of the mid-gap and second gap layer is four times as thick as the first gap layer which results in the image fields from the first and second shield layers completely counterbalancing the field from the antiferromagnetic, pinned and spacer layers due to the sense current.
摘要翻译： 提供了一种正交自旋阀读头，其中自旋阀传感器不对称地位于第一和第二屏蔽层之间，使得第一和第二屏蔽层中的图像电流产生所得到的图像场，其部分地或完全地抵消来自反铁磁，固定的 以及当通过其传导感应电流时MR传感器中的间隔层。 因此，通过在自旋阀传感器和第二间隙层之间提供中间间隔层，自旋阀传感器可以位于比第二屏蔽层更大的距离处。 在一个示例中，中间间隙和第二间隙层的总厚度是第一间隙层的四倍，这导致来自第一和第二屏蔽层的图像场完全平衡场与反铁磁，固定和间隔物 层由于感应电流。
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9.发明授权
公开(公告)号：US5974657A
公开(公告)日：1999-11-02
申请号：US44428
申请日：1998-03-19
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , G11B5/3103 , G11B5/3113 , G11B5/3163 , G11B5/465 , Y10T29/49034 , Y10T29/49036 , Y10T29/49044
摘要： A method is provided for resetting the magnetization of the pinned and hard biasing layers of a spin valve read head at the row level. In a first embodiment of the invention a first magnetic field is applied substantially perpendicular to the air bearing surface (ABS) at room temperature for setting the magnetic moment of the pinned layer substantially perpendicular to the ABS followed by applying a second magnetic field substantially parallel to the ABS for setting the magnetic moments of the hard biasing layers substantially parallel to the ABS. In a second embodiment of the invention the antiferromagnetic pinning layer is also reset. This is done by heating the pinning layer with a current pulse conducted through the leads to the conductive layers of the spin valve head so that localized heating takes place adjacent the pinning layer as contrasted to ambient heating of the spin valve head. Simultaneous with the localized heating the first magnetic field is applied for orienting the magnetic spins of the pinning layer perpendicular to the ABS and resetting the magnetic moment of the pinned layer perpendicular to the ABS in a single domain state. Subsequently, a second magnetic field is applied for resetting the magnetic moment of the hard biasing layer parallel to the ABS in a single domain state.
摘要翻译： 提供一种用于在行级别复位自旋阀读头的被钉扎和硬偏置层的磁化的方法。 在本发明的第一实施例中，在室温下基本上垂直于空气轴承表面（ABS）施加第一磁场，用于将被钉扎层的磁矩基本上垂直于ABS，然后施加基本上平行于 用于设置硬偏置层的磁矩基本上平行于ABS的ABS。 在本发明的第二实施例中，反铁磁钉扎层也被复位。 这是通过将导线穿过引线的电流脉冲加热到钉扎层来完成的，所述电流脉冲与自旋阀头的导电层相反，使得与旋转阀头的环境加热相反，在钉扎层附近发生局部加热。 与局部加热同时，施加第一磁场用于定向垂直于ABS的钉扎层的磁自旋，并以单域状态重置垂直于ABS的钉扎层的磁矩。 随后，施加第二磁场以在单个域状态下复位与ABS平行的硬偏置层的磁矩。
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公开(公告)号：US5696656A
公开(公告)日：1997-12-09
申请号：US709549
申请日：1996-09-06
申请人： Hardayal Singh Gill , Bruce A. Gurney , Joseph Francis Smyth , Virgil Simon Speriosu , Douglas Johnson Werner
发明人： Hardayal Singh Gill , Bruce A. Gurney , Joseph Francis Smyth , Virgil Simon Speriosu , Douglas Johnson Werner
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3912 , G11B5/3967 , G11B2005/0018 , G11B2005/3996
摘要： An orthogonal spin valve read head is provided wherein a spin valve sensor is asymmetrically located between first and second shield layers so that image currents in the first and second shield layers produce a resultant image field which partially or completely counterbalances a stiffening field from antiferromagnetic, pinned and spacer layers in the MR sensor when sense current is conducted therethrough. Accordingly, the spin valve sensor may be located a greater distance from the second shield layer by providing a mid-gap layer between the spin valve sensor and a second gap layer. In one example, the total thickness of the mid-gap and second gap layer is four times as thick as the first gap layer which results in the image fields from the first and second shield layers completely counterbalancing the field from the antiferromagnetic, pinned and spacer layers due to the sense current.
摘要翻译： 提供了一种正交自旋阀读头，其中自旋阀传感器不对称地位于第一和第二屏蔽层之间，使得第一和第二屏蔽层中的图像电流产生所得到的图像场，其部分地或完全地抵消来自反铁磁，固定的 以及当通过其传导感应电流时MR传感器中的间隔层。 因此，通过在自旋阀传感器和第二间隙层之间提供中间间隔层，自旋阀传感器可以位于比第二屏蔽层更大的距离处。 在一个示例中，中间间隙和第二间隙层的总厚度是第一间隙层的四倍，这导致来自第一和第二屏蔽层的图像场完全平衡场与反铁磁，固定和间隔物 层由于感应电流。
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