公开(公告)号：US08163143B2

公开(公告)日：2012-04-24

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US20090026072A1

公开(公告)日：2009-01-29

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/34 ,  C23C16/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜以2000倍的倍数观察垂直于溅射靶的平面的横截面，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积， Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US20090242394A1

公开(公告)日：2009-10-01

申请号：US12414877

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

IPC分类号： C23C14/34 ,  C21D1/00

CPC分类号： C23C14/3414 ,  C22C21/00 ,  C22F1/04

摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

摘要翻译： 本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷 在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。 本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。

公开(公告)号：US08580093B2

公开(公告)日：2013-11-12

申请号：US12415379

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

发明人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： C23C14/3414

摘要： The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from ¼t (t: thickness) to ¾t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.

摘要翻译： 本发明提供一种能够通过使用包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，沉积时减少溅射产生的技术。 本发明涉及包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，其中（1）主要包含Al和Ni并且平均粒径为0.3的Al-Ni金属间化合物的总面积 基于Al-Ni金属间化合物的整个面积，3μm以下的3μm以下的面积比为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积 并且平均粒径为0.2μm以上且2μm以下的Cu相对于Al-La-Cu金属间化合物的整个面积的面积比为70％以上，在溅射的一部分的情况下 通过使用放大2000倍的扫描电子显微镜，沿垂直于溅射靶的平面的横截面在〜（t：厚度）〜¾t的范围内观察靶。

公开(公告)号：US20090242395A1

公开(公告)日：2009-10-01

申请号：US12415379

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

发明人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

IPC分类号： C23C14/34 ,  B05D3/02

CPC分类号： C23C14/3414

摘要： The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4 t (t: thickness) to 3/4 t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.

摘要翻译： 本发明提供一种能够通过使用包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，沉积时减少溅射产生的技术。 本发明涉及包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，其中（1）主要包含Al和Ni并且平均粒径为0.3的Al-Ni金属间化合物的总面积 基于Al-Ni金属间化合物的整个面积，3μm以下的3μm以下的面积比为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积 并且平均粒径为0.2μm以上且2μm以下的Cu相对于Al-La-Cu金属间化合物的整个面积的面积比为70％以上，在溅射的一部分的情况下 沿着垂直于溅射靶的平面的横截面，在使用2000倍的扫描电子显微镜的范围内，在1/4t（t：厚度）至3/4t的范围内观察到靶。

公开(公告)号：US09058914B2

公开(公告)日：2015-06-16

申请号：US13885868

申请日：2011-11-11

申请人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

发明人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

IPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34

CPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B35/62695 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414

摘要： This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

摘要翻译： 该氧化物烧结体通过混合和烧结氧化锌，氧化锡和氧化铟的粉末而获得。 通过该氧化物烧结体的X射线衍射测定，氧化物烧结体以Zn2SnO4相为主相，并含有In / In2O3-ZnSnO3固溶体，其中In和/或In 2 O 3固溶于ZnSnO 3，但是 不检测Zn x In y O z相（其中，x，y和z各自表示任意的正整数）。 因此，本发明能够提供一种适用于制造显示装置用氧化物半导体膜的氧化物烧结体，具有高导电性和高相对密度。 氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜。

公开(公告)号：US20130234081A1

公开(公告)日：2013-09-12

申请号：US13885868

申请日：2011-11-11

申请人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

发明人： Hiroshi Goto ,  Yuki Iwasaki ,  Masaya Ehira ,  Yoichiro Yoneda

IPC分类号： C23C14/08 ,  H01B1/08

CPC分类号： H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B35/62695 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414

摘要： This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

摘要翻译： 该氧化物烧结体通过混合和烧结氧化锌，氧化锡和氧化铟的粉末而获得。 通过该氧化物烧结体的X射线衍射测定，氧化物烧结体以Zn2SnO4相为主相，并含有In / In2O3-ZnSnO3固溶体，其中In和/或In 2 O 3固溶于ZnSnO 3，但是 不检测Zn x In y O z相（其中，x，y和z各自表示任意的正整数）。 因此，本发明能够提供一种适用于制造显示装置用氧化物半导体膜的氧化物烧结体，具有高导电性和高相对密度。 氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜。

公开(公告)号：US20130306469A1

公开(公告)日：2013-11-21

申请号：US13981729

申请日：2012-02-09

申请人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

发明人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086

摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2ν=26.5°.

摘要翻译： 本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高 。 该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。 当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下式（1）：等式（1）：[A /（A + B + C + D）]×100> = 70。 在式（1）中，A表示2θ= 34°附近的XRD峰强度，B表示2θ= 31°附近的XRD峰强度，C表示2θ= 35°附近的XRD峰强度 ，D表示2nu = 26.5°附近的XRD峰强度。

公开(公告)号：US09175380B2

公开(公告)日：2015-11-03

申请号：US13981729

申请日：2012-02-09

申请人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

发明人： Moriyoshi Kanamaru ,  Yuki Iwasaki ,  Minoru Matsui ,  Hiroshi Goto ,  Akira Nambu

IPC分类号： C25B11/00 ,  C25B13/00 ,  C23C14/34 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C23C14/08

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086

摘要： Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2θ=26.5°.

摘要翻译： 本发明提供一种适合用于制造显示装置用氧化物半导体膜的氧化物烧结体，能够形成氧化物半导体膜的氧化物烧结体，具有优异的导电性，相对密度高，面内均匀性优异，载流子迁移率高 。 该氧化物烧结体通过组合并烧结氧化锌粉末，氧化锡粉末和氧化铟粉末而获得。 当氧化物烧结体进行X射线衍射时，氧化物烧结体满足下列等式（1）：等式（1）：[A /（A + B + C + D）]×100≥70。 在等式（1）中，A表示2附近的XRD峰强度; = 34°，B表示2附近的XRD峰强度; = 31°，C表示2附近的XRD峰强度; = 35°，D表示2θ附近的XRD峰强度= 26.5°。

公开(公告)号：US20130334039A1

公开(公告)日：2013-12-19

申请号：US14002491

申请日：2012-03-01

申请人： Hiroshi Goto ,  Yuki Iwasaki

发明人： Hiroshi Goto ,  Yuki Iwasaki

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/963 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： Provided are an oxide sintered body and a sputtering target which are suitable for use in producing an oxide semiconductor film for display devices and combine high electroconductivity with a high relative density and with which it is possible to form an oxide semiconductor film having a high carrier mobility. In particular, even when used in production by a direct-current sputtering method, the oxide sintered body and the sputtering target are less apt to generate nodules and have excellent direct-current discharge stability which renders long-term stable discharge possible. This oxide sintered body is an oxide sintered body obtained by mixing zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta, and sintering the mixture, the oxide sintered body having a Vickers hardness of 400 Hv or higher.

摘要翻译： 本发明提供一种氧化物烧结体和溅射靶，其适用于制造显示装置用氧化物半导体膜，并且具有高相对密度的高导电性，并且可以形成具有高载流子迁移率的氧化物半导体膜 。 特别是，即使在通过直流溅射法生产中使用时，氧化物烧结体和溅射靶也不易产生结节，并且具有优异的直流放电稳定性，这使得长期稳定的放电成为可能。 该氧化物烧结体是通过将氧化锌，氧化锡和选自Al，Hf，Ni，Si，Ga，In和Ta中的至少一种金属（M金属）的氧化物混合而获得的氧化物烧结体 ，并烧结混合物，维氏硬度为400Hv以上的氧化物烧结体。