公开(公告)号：US08163143B2

公开(公告)日：2012-04-24

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US20090026072A1

公开(公告)日：2009-01-29

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/34 ,  C23C16/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜以2000倍的倍数观察垂直于溅射靶的平面的横截面，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积， Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US20090242394A1

公开(公告)日：2009-10-01

申请号：US12414877

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

IPC分类号： C23C14/34 ,  C21D1/00

CPC分类号： C23C14/3414 ,  C22C21/00 ,  C22F1/04

摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

摘要翻译： 本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷 在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。 本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。

公开(公告)号：US08580093B2

公开(公告)日：2013-11-12

申请号：US12415379

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

发明人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： C23C14/3414

摘要： The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from ¼t (t: thickness) to ¾t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.

摘要翻译： 本发明提供一种能够通过使用包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，沉积时减少溅射产生的技术。 本发明涉及包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，其中（1）主要包含Al和Ni并且平均粒径为0.3的Al-Ni金属间化合物的总面积 基于Al-Ni金属间化合物的整个面积，3μm以下的3μm以下的面积比为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积 并且平均粒径为0.2μm以上且2μm以下的Cu相对于Al-La-Cu金属间化合物的整个面积的面积比为70％以上，在溅射的一部分的情况下 通过使用放大2000倍的扫描电子显微镜，沿垂直于溅射靶的平面的横截面在〜（t：厚度）〜¾t的范围内观察靶。

公开(公告)号：US20090242395A1

公开(公告)日：2009-10-01

申请号：US12415379

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

发明人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

IPC分类号： C23C14/34 ,  B05D3/02

CPC分类号： C23C14/3414

摘要： The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4 t (t: thickness) to 3/4 t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.

摘要翻译： 本发明提供一种能够通过使用包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，沉积时减少溅射产生的技术。 本发明涉及包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，其中（1）主要包含Al和Ni并且平均粒径为0.3的Al-Ni金属间化合物的总面积 基于Al-Ni金属间化合物的整个面积，3μm以下的3μm以下的面积比为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积 并且平均粒径为0.2μm以上且2μm以下的Cu相对于Al-La-Cu金属间化合物的整个面积的面积比为70％以上，在溅射的一部分的情况下 沿着垂直于溅射靶的平面的横截面，在使用2000倍的扫描电子显微镜的范围内，在1/4t（t：厚度）至3/4t的范围内观察到靶。

公开(公告)号：US20080121522A1

公开(公告)日：2008-05-29

申请号：US11931197

申请日：2007-10-31

申请人： Masaya EHIRA ,  Katsutoshi Takagi ,  Toshihiro Kugimiya ,  Yoichiro Yoneda ,  Hiroshi Gotou

发明人： Masaya EHIRA ,  Katsutoshi Takagi ,  Toshihiro Kugimiya ,  Yoichiro Yoneda ,  Hiroshi Gotou

IPC分类号： C23C14/50 ,  B05D3/00

CPC分类号： C23C14/3414 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18 ,  B22F9/082 ,  B22F2998/10 ,  C22C21/00 ,  C23C4/08 ,  C23C4/123 ,  H01J37/3426 ,  H01J37/3429

摘要： The invention relates to an Al—Ni—La system Al-based alloy sputtering target comprising Ni and La, wherein, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction, the Al—La system intermetallic compound being mainly composed of Al and La.

摘要翻译： 本发明涉及包含Ni和La的Al-Ni-La系Al基合金溅射靶，其中当垂直于平面的横截面中从（¼）t至（¾）t（t：厚度）的截面 用扫描电子显微镜以2000倍的倍率观察溅射靶，（1）平均粒径为0.3〜3μm的Al-Ni系金属间化合物的总面积相对于 Al-Ni系金属间化合物的面积分数为70％以上，Al-Ni系金属间化合物主要由Al和Ni构成， 和（2）相对于整个Al-La体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-La系金属间化合物的总面积为70％以上 面积分数，Al-La系金属间化合物主要由Al和La组成。

公开(公告)号：US09212418B2

公开(公告)日：2015-12-15

申请号：US11931197

申请日：2007-10-31

申请人： Masaya Ehira ,  Katsutoshi Takagi ,  Toshihiro Kugimiya ,  Yoichiro Yoneda ,  Hiroshi Gotou

发明人： Masaya Ehira ,  Katsutoshi Takagi ,  Toshihiro Kugimiya ,  Yoichiro Yoneda ,  Hiroshi Gotou

IPC分类号： C23C14/34 ,  C23C4/08 ,  C23C4/12 ,  C22C21/00 ,  B22F9/08 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18 ,  H01J37/34

CPC分类号： C23C14/3414 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18 ,  B22F9/082 ,  B22F2998/10 ,  C22C21/00 ,  C23C4/08 ,  C23C4/123 ,  H01J37/3426 ,  H01J37/3429

摘要： The invention relates to an Al—Ni—La system Al-based alloy sputtering target where a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction.

摘要翻译： 本发明涉及Al-Ni-La系Al基合金溅射靶，其中Al-Ni系金属间化合物的总面积相对于整个Al的总面积为0.3μm至3μm的平均粒径 -Ni系金属间化合物的面积率为70％以上，平均粒径为0.2μm〜2μm的Al-La系金属间化合物的总面积相对于Al的整个面积的总面积 -La系金属间化合物的面积分数为70％以上。

公开(公告)号：US20120181172A1

公开(公告)日：2012-07-19

申请号：US13496899

申请日：2010-09-15

申请人： Hitoshi Matsuzaki ,  Katsutoshi Takagi ,  Norihiro Jiko ,  Masaya Ehira

发明人： Hitoshi Matsuzaki ,  Katsutoshi Takagi ,  Norihiro Jiko ,  Masaya Ehira

IPC分类号： C23C14/34 ,  C23C14/08

CPC分类号： G11B7/266 ,  C23C14/3414 ,  G11B2007/24302 ,  G11B2007/2432

摘要： Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 μm or less.

摘要翻译： 公开了一种金属氧化物 - 金属复合溅射靶，其用于形成用于光学信息记录介质的记录层，所述记录层含有金属氧化物和金属。 具体公开了包含金属氧化物（A）和金属（B）的复合溅射靶，其中金属氧化物（A）的圆当量直径的最大值被控制在200μm以下。

公开(公告)号：US20130233706A1

公开(公告)日：2013-09-12

申请号：US13878334

申请日：2011-10-05

申请人： Katsushi Matsumoto ,  Katsutoshi Takagi ,  Yuichi Taketomi ,  Junichi Nakai ,  Hidetada Makino ,  Toshiaki Takagi

发明人： Katsushi Matsumoto ,  Katsutoshi Takagi ,  Yuichi Taketomi ,  Junichi Nakai ,  Hidetada Makino ,  Toshiaki Takagi

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  B22F3/115 ,  B22F3/15 ,  B22F3/24 ,  C22C1/0416 ,  C22C21/00 ,  C22F1/04 ,  C23C16/45504 ,  C23C16/4585 ,  C23C16/4586

摘要： There is provided an Al-based alloy sputtering target, which can provide an enhanced deposition rate (or sputtering rate) when the sputtering target is used, and which can preferably prevent the occurrence of splashes. The Al-based alloy sputtering target of the present invention includes Ta and may preferably include an Al—Ta-based intermetallic compound containing Al and Ta, which compound has a mean particle diameter of from 0.005 μm to 1.0 μm and a mean interparticle distance of from 0.01 μm to 10.0 μm.

摘要翻译： 提供了一种Al系合金溅射靶，其可以在使用溅射靶时提供增强的沉积速率（或溅射速率），并且可以优选地防止飞溅的发生。 本发明的Al系合金溅射靶包括Ta，并且优选包括含有Al和Ta的Al-Ta系金属间化合物，该化合物的平均粒径为0.005〜1.0μm，平均粒子间距离为 从0.01毫米到10.0毫米。

公开(公告)号：USRE43590E1

公开(公告)日：2012-08-21

申请号：US11430302

申请日：2006-05-09

申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

IPC分类号： H01L23/54

CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736 ,  H01L2924/00

摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.REEXAMINATION RESULTSThe questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.

摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150℃至400℃的退火温度下退火Al合金膜，使溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μΩ·cm·cm的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。 重审结果2005年11月28日和2005年11月28日提交的第90 / 007,822号和第90 / 007,883号复核程序中提出的问题已经被考虑，其结果反映在构成复审的重新发行专利中 35USC要求的证书 根据37 CFR 1.570（e）规定，单方面复审，和/或35 U.S.C.所要求的复审证书。 按照第37 CFR 1.997（e）条的规定进行跨部门重新审查。