公开(公告)号：US5034260A

公开(公告)日：1991-07-23

申请号：US539176

申请日：1990-06-18

申请人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： C04B35/47 ,  H05K1/03 ,  H05K1/16 ,  H05K3/46

CPC分类号： H05K1/162 ,  C04B35/47 ,  H05K1/0306 ,  H05K2201/0187 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/24802 ,  Y10T428/24926

摘要： A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of M.sub.g O, based on 100 mol parts of said principal components, in addition to the composition of the first region.

摘要翻译： 陶瓷包括第一区域，其包含在半导体瓷器的晶界处具有绝缘层的电介质陶瓷，所述绝缘层含有0.50-5.30摩尔份的MnO 2和0.02-0.40摩尔的Y 2 O 3，每100摩尔的主成分由49.50 -54.00摩尔％的TiO 2和50.50-46.00摩尔％的SrO，以及第二区域，其包含基于100摩尔份所述主要成分的另外含有0.40-5.00摩尔份的MgO的电介质瓷，除了 第一区。

公开(公告)号：US5041327A

公开(公告)日：1991-08-20

申请号：US513430

申请日：1990-04-25

申请人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： C04B35/47 ,  H05K1/03 ,  H05K1/16 ,  H05K3/46

CPC分类号： H05K1/162 ,  C04B35/47 ,  H05K1/0306 ,  H05K2201/0187 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A ceramic comprising a first region comprises a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of Al.sub.2 O.sub.3, based on 100 mol parts of said principal components, in addition to the composition of the first region.

摘要翻译： 包括第一区域的陶瓷包括在半导体瓷器的晶界处具有绝缘层的电介质瓷，其含有0.50-5.30摩尔份的MnO 2和0.02-0.40摩尔份的Y 2 O 3，每100摩尔份由49.50 -54.00摩尔％的TiO 2和50.50-46.00摩尔％的SrO，以及第二区域，其包含基于100摩尔份所述主成分的另外含有0.40-5.00摩尔份的Al 2 O 3的电介质瓷，除了 第一区。

公开(公告)号：US4952538A

公开(公告)日：1990-08-28

申请号：US213891

申请日：1988-06-30

申请人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： C04B35/46 ,  C04B35/47 ,  H01B3/12 ,  H05K1/03 ,  H05K1/16 ,  H05K3/46

CPC分类号： H05K1/162 ,  C04B35/47 ,  H05K1/0306 ,  H05K2201/0187 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of MgO, based on 100 mol parts of said principal components, in addition to the composition of the first region.

摘要翻译： 陶瓷包括第一区域，其包含在半导体瓷器的晶界处具有绝缘层的电介质陶瓷，所述绝缘层含有0.50-5.30摩尔份的MnO 2和0.02-0.40摩尔的Y 2 O 3，每100摩尔的主成分由49.50 -54.00摩尔％的TiO 2和50.50-46.00摩尔％的SrO，以及第二区域，其包含基于100摩尔份所述主要成分的另外含有0.40-5.00摩尔份的MgO的电介质瓷，除了 第一区。

公开(公告)号：US4942079A

公开(公告)日：1990-07-17

申请号：US207201

申请日：1988-06-16

申请人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： C04B35/46 ,  C04B35/47 ,  H01B3/12 ,  H01P3/08 ,  H05K1/03 ,  H05K1/16 ,  H05K3/46

CPC分类号： C04B35/47 ,  H05K1/162 ,  H05K1/0306 ,  H05K2201/0187 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A ceramic comprising a first region comprises a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of Al.sub.2 O.sub.3, based on 100 mol parts of said principal components, in addition to the composition of the first region.

摘要翻译： 包括第一区域的陶瓷包括在半导体瓷器的晶界处具有绝缘层的电介质瓷，其含有0.50-5.30摩尔份的MnO 2和0.02-0.40摩尔份的Y 2 O 3，每100摩尔份由49.50 -54.00摩尔％的TiO 2和50.50-46.00摩尔％的SrO，以及第二区域，其包含基于100摩尔份所述主成分的另外含有0.40-5.00摩尔份的Al 2 O 3的电介质瓷，除了 第一区。

公开(公告)号：US5077632A

公开(公告)日：1991-12-31

申请号：US601430

申请日：1990-10-23

申请人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： C04B35/46 ,  C04B35/47 ,  H01B3/12 ,  H05K1/03 ,  H05K1/16 ,  H05K3/46

CPC分类号： C04B35/47 ,  H05K1/162 ,  H05K1/0306 ,  H05K2201/0187 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/24331 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24942

摘要： The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol. % of TiO.sub.2 and 50.50 to 46.00 mol. % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

公开(公告)号：US4943469A

公开(公告)日：1990-07-24

申请号：US216233

申请日：1988-07-07

申请人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： H01B3/12 ,  C04B35/46 ,  C04B35/47 ,  H05K1/03 ,  H05K1/16 ,  H05K3/46

CPC分类号： H05K1/162 ,  C04B35/47 ,  H05K1/0306 ,  H05K2201/0187 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol% of TiO.sub.2 and 50.50 to 46.00 mol% of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of MgO and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

摘要翻译： 本发明提供一种陶瓷，其具有包含电介质瓷的第一区域，所述电介质陶瓷在半导体瓷的晶界处具有绝缘层，所述绝缘层含有0.50〜5.30摩尔份的MnO 2和0.02〜0.40摩尔份的Y 2 O 3/100摩尔份数 包含49.50至54.00摩尔％的TiO 2和50.50至46.00摩尔％的SrO的组分，以及第二区域，其包含另外含有0.40至5.00摩尔份的MgO的电介质瓷和每100摩尔份数为0.05至2.00摩尔的SiO 2 除了第一区域的组成之外，还提供了使用相同陶瓷的电路基板和电子电路基板。

公开(公告)号：US5006957A

公开(公告)日：1991-04-09

申请号：US534354

申请日：1990-06-07

申请人： Motoo Kumagai ,  Keiichi Kato ,  Humio Takeuti ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Humio Takeuti ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： C04B35/46 ,  C04B35/47 ,  H01B3/12 ,  H01G4/12

CPC分类号： H01G4/1281 ,  C04B35/47 ,  H01G4/1227

摘要： A ceramic-forming composition comprises from 2.0 to 5.0 mol parts of MnO.sub.2 and from 0.05 to 0.30 mol part of Y.sub.2 O.sub.3 based on 100 mol parts of a main component comprising from 50.20 to 53.50 mol % of TiO.sub.2 and from 49.80 to 46.50 mol % of SrO. A semiconductor porcelain substrate, a dielectric porcelain substrate and a capacitor are produced by using the same ceramic-forming composition.

摘要翻译： 陶瓷形成组合物包含2.0至5.0摩尔份的MnO 2和0.05至0.30摩尔的Y 2 O 3，基于100摩尔的包含50.20至53.50摩尔％的TiO 2和49.80至46.50摩尔％的SrO的主要组分 。 通过使用相同的陶瓷形成组合物制造半导体瓷基板，电介质瓷基板和电容器。

公开(公告)号：US4992399A

公开(公告)日：1991-02-12

申请号：US209571

申请日：1988-06-21

申请人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Keiichi Kato ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： C04B35/46 ,  C04B35/47 ,  H01B3/12 ,  H05K1/03 ,  H05K1/16 ,  H05K3/46

CPC分类号： C04B35/47 ,  H05K1/162 ,  H05K1/0306 ,  H05K2201/0187 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/24331 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24942

摘要： The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol % of TiO.sub.2 and 50.50 to 46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

摘要翻译： 本发明提供一种陶瓷，其具有包含电介质瓷的第一区域，所述电介质陶瓷在半导体瓷的晶界处具有绝缘层，所述绝缘层含有0.50〜5.30摩尔份的MnO 2和0.02〜0.40摩尔份的Y 2 O 3/100摩尔份数 包含49.50至54.00mol％的TiO 2和50.50至46.00mol％的SrO的组分，以及第二区域，其包含另外含有0.40-5.00mol份Al 2 O 3和0.05至2.00mol份SiO 2的电介质陶瓷，每100mol部分的主体 除了第一区域的组成之外，还提供了使用相同陶瓷的电路基板和电子电路基板。

公开(公告)号：US4736230A

公开(公告)日：1988-04-05

申请号：US852182

申请日：1986-04-15

申请人： Motoo Kumagai ,  Masato Nagano ,  Michiaki Sakaguchi

发明人： Motoo Kumagai ,  Masato Nagano ,  Michiaki Sakaguchi

IPC分类号： H01B3/12 ,  C04B35/465 ,  C04B35/468 ,  H01G4/12

CPC分类号： H01G4/1281 ,  C04B35/465 ,  C04B35/4682

摘要： A composition for semiconductor porcelain comprisies:(a) 35.5 to 70 mol % of MgTiO.sub.3,(b) 26.5 to 61 mol % of BaTiO.sub.3,(c) a grain boundary improver, and(d) 0.01 to 0.2 mol % of an element selected from rare earth elements and the elements belonging to the group V of the periodic table.

摘要翻译： 一种半导体瓷的组合物包括：（a）35.5-70mol％的MgTiO3，（b）26.5至61mol％的BaTiO3，（c）晶界改进剂，和（d）选择的元素的0.01至0.2mol％ 来自稀土元素和属于元素周期表V族的元素。

公开(公告)号：US20130209016A1

公开(公告)日：2013-08-15

申请号：US13641704

申请日：2011-02-07

申请人： Jyunya Inohae ,  Yoshio Kaneko ,  Masato Nagano

发明人： Jyunya Inohae ,  Yoshio Kaneko ,  Masato Nagano

IPC分类号： F16C41/00

CPC分类号： F16C41/007 ,  B60B7/0013 ,  B60B27/0005 ,  B60B27/0068 ,  B60B27/0073 ,  B60B35/02 ,  B60B2380/12 ,  B60B2380/73 ,  B60B2900/325 ,  B60B2900/3312 ,  B60Y2200/11 ,  F16C19/186 ,  F16C33/723 ,  F16C33/768 ,  F16C2240/30 ,  F16C2240/40 ,  F16C2240/60 ,  F16C2326/02 ,  G01P3/443 ,  G01P3/487

摘要： Construction is achieved that is able to prevent strain deformation in the axial direction of a flat plate section 21 of a cover 19a when a cylinder section 20 of the cover 19a, which covers the opening on the inside end in the axial direction of an internal space where an encoder 1 is located, is fitted into and fastened to the inside end section in the axial direction of an outer ring 7. A non-contact section 26a is formed all the way around the inside end section in the axial direction of the cylinder section 20 such that the outer diameter is smaller than the inner diameter of the inside end section in the axial direction of the outer ring, and the dimension L26 in the axial direction is two times or more the thickness dimension t19 of a plate member of the cover 19a. With the cover 19a fitted into the inside end section in the axial direction of the outer ring 7, only the portion of the cylinder section 20 that is nearer the outside in the axial direction than the non-contact section 26a is substantially fitted into the inside end section in the axial direction of the outer ring 7 with an interference fit.

摘要翻译： 实现能够防止盖19a的圆筒部20在内侧空间的内侧端部的内侧的盖部19a的盖部19a的平坦部21的轴向的应变变形的结构 其中编码器1位于外环7的轴向上并固定到内端部。非接触部分26a围绕内端部沿圆柱体的轴向方向形成 使得外径比外圈的轴向方向上的内端部的内径小，并且在轴向上的尺寸L26是板状部件的板状部件的厚度尺寸t19的两倍以上 封面19a。 通过在外圈7的轴向上装配在内端部中的盖19a，仅将缸部20的比非接触部26a更靠外侧的部分大致嵌合在内侧 在外圈7的轴向的端部具有过盈配合。