摘要:
Synthetic quartz glass is produced by feeding a silica-forming raw material gas, hydrogen gas, oxygen gas and a fluorine compound gas from a burner to a reaction zone, flame hydrolyzing the silica-forming raw material gas in the reaction zone to form fine particles of fluorine-containing silica, depositing the silica fine particles on a rotatable substrate in the reaction zone so as to create a fluorine-containing porous silica matrix, and heat vitrifying the porous silica matrix in a fluorine compound gas-containing atmosphere. This process enables the low-cost manufacture of a synthetic quartz glass having a higher and more uniform transmittance to light in the vacuum ultraviolet region than has hitherto been achieved.
摘要:
A process for manufacturing synthetic quartz glass involves feeding a quartz glass-forming raw material to a high-temperature gas zone within a chamber, converting the quartz glass-forming raw material into quartz soot, and forming synthetic quartz glass from the soot. A suspended soot-discharging gas which has been flow-straightened in a suspended soot discharging direction flows through the chamber in the vicinity of the high-temperature gas zone. This process keeps free suspended soot from settling onto the surface of the quartz ingot where fusion and growth take place, thereby preventing the formation of bubbles within the quartz glass under growth.
摘要:
A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/μm and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.
摘要:
A polyhydroxystyrene having a 2,4-diamino-s-triazinyl group substituted for 1-50 mol % of its hydroxyl group and a weight average molecular weight of 3,000-50,000 is provided. A negative radiation-sensitive resist composition comprising the polymer, preferably along with a photo-acid generator and a crosslinking agent has high resolution and developability, affords a resist pattern of rectangular profile, and is shelf stable. The composition is thus very useful as resist material for LSI manufacture.
摘要:
A titania-doped quartz glass containing 3-12 wt % of titania at a titania concentration gradient less than or equal to 0.01 wt %/μm and having an apparent transmittance to 440 nm wavelength light of at least 30% at a thickness of 6.35 mm is of such homogeneity that it provides a high surface accuracy as required for EUV lithographic members, typically EUV lithographic photomask substrates.
摘要:
In a quartz glass, a mark is internally made such that a retardation generated in close proximity to the end of the mark is up to 20 nm. The internally marked quartz glass in which internal marks are created without sacrificing optical precision finds use as quartz glass substrates for optical members in the electronic industry.
摘要:
A polyhydroxystyrene having a 2,4-diamino-s-triazinyl group substituted for 1-50 mol % of its hydroxyl group and a weight average molecular weight of 3,000-50,000 is provided. A negative radiation-sensitive resist composition comprising the polymer, preferably along with a photo-acid generator and a crosslinking agent has high resolution and developability, affords a resist pattern of rectangular profile, and is shelf stable. The composition is thus very useful as resist material for LSI manufacture.
摘要:
A polystyrene type monodispersion polymer having at least a monomer unit represented by the following general formula (I), and having a molecular weight which lies in the range 500-500,000 and manufacturing process thereof are disclosed; ##STR1## where R is a hydrogen atom or methyl group, and the R in the molecule may be identical or different.
摘要:
A p-vinylphenoxydimethylphenylcalbyldimethylsilane homopolymer having a molecular weight dispersion narrow enough to ensure high resolution and high developability to resists containing said homopolymer as main component can be manufactured by anionic polymerization of a p-vinylphenoxydimethylphenylcalbyldimethylsilane monomer.
摘要:
The present invention provides a silicon manufacturing method for purifying silicon metal to manufacture solar cell silicon by reducing boron contained as impurities in the silicon metal. The present invention provides a silicon manufacturing method including preparing a mixture containing both silicon in a molten state and a molten salt, introducing a gas containing a chlorine atom into the mixture, and introducing moisture vapor together with the chlorine-atom containing gas. The chlorine-atom containing gas may preferably be a chlorine gas or silicon tetrachloride. The molten salt may preferably be composed of a mixture containing at least silicon dioxide and calcium oxide, and the mixture may additionally contain calcium fluoride.