Ladder filter and duplexer
    1.
    发明授权

    公开(公告)号:US10177740B2

    公开(公告)日:2019-01-08

    申请号:US15468143

    申请日:2017-03-24

    摘要: A ladder filter includes a piezoelectric substrate, an insulating film on the piezoelectric substrate, first and second electrodes provided on the piezoelectric substrate and including a pair of busbars and plurality of electrode fingers, a first line electrode at least a portion of which is defined by the busbar at one side of the first electrode, a second line electrode at least a portion of which is defined by the busbar at one side of the second electrode, and a third line electrode laminated on the second line electrode. The first line electrode and the second line electrode are electrically connected to different electric potentials. The first line electrode is separated from the second line electrode by a predetermined distance. At least a portion of the third line electrode is overlapped with at least a portion of the first line electrode with the insulating film interposed therebetween in a laminating direction.

    Acoustic wave device, band pass filter, duplexer, and multiplexer

    公开(公告)号:US11838006B2

    公开(公告)日:2023-12-05

    申请号:US17223057

    申请日:2021-04-06

    摘要: An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer made of lithium tantalate, an IDT electrode on the piezoelectric substrate, and a pair of reflectors on both sides of the IDT electrode on the piezoelectric substrate in an acoustic wave propagation direction. SH waves are used as a principal mode. The IDT electrode includes electrode fingers and the pair of reflectors each including electrode fingers. When a length along a direction orthogonal to a direction in which the electrode fingers extend is a width, each of the reflectors includes first and second electrode fingers having different widths. Four consecutive electrode fingers, which are any four of the electrode fingers of each of the reflectors, include both of the first and second electrode fingers and distances between centers of the four consecutive electrode fingers are equal or substantially equal.

    Module device
    4.
    发明授权

    公开(公告)号:US10581401B2

    公开(公告)日:2020-03-03

    申请号:US16057841

    申请日:2018-08-08

    发明人: Akira Michigami

    摘要: A module device includes electrode lands and signal wires on an upper surface defining one main surface of a module substrate. A filter chip is mounted on the module substrate. The filter chip includes first bumps connected to a signal potential, second bumps connected to a ground potential, and a third bump not electrically connected to a functional electrode portion. In a mount region, the third bump which is a floating bump is electrically connected to the signal wire.

    Elastic wave device
    6.
    发明授权

    公开(公告)号:US11528008B2

    公开(公告)日:2022-12-13

    申请号:US15924307

    申请日:2018-03-19

    摘要: An elastic wave device includes a piezoelectric substrate, elastic wave resonators on or in the piezoelectric substrate, and a dielectric film disposed on the piezoelectric substrate and covering the elastic wave resonators. The elastic wave resonators includes respective IDT electrodes on the piezoelectric substrate. When a wavelength specified by an electrode finger pitch of the IDT electrode is denoted as λ, at least two of the elastic wave resonators have the different wavelengths. In two of the elastic wave resonators having different wavelengths, a film thickness of the IDT electrode in the elastic wave resonator having the longer wavelength is not greater than that of the IDT electrode in the elastic wave resonator having the shorter wavelength. Film thicknesses of the IDT electrodes in at least two of the elastic wave resonators are different from each other. The elastic wave device utilizes a Rayleigh wave.

    Acoustic wave device
    7.
    发明授权

    公开(公告)号:US11218130B2

    公开(公告)日:2022-01-04

    申请号:US16728003

    申请日:2019-12-27

    摘要: An acoustic wave device includes a support substrate having a central region and a surrounding region located around the central region, a silicon oxide film that is located in the central region directly or indirectly and that has a side surface, a piezoelectric layer that is provided on the silicon oxide film and that has a first principal surface and a second principal surface, an excitation electrode provided on at least one of the first principal surface and the second principal surface, a cover film provided to cover the entire side surface of the silicon oxide film, a resin layer that is provided in the surrounding region and that is provided to cover the side surface of the silicon oxide film from above the cover film, and a wiring electrode that is electrically connected to the excitation electrode and that extends from the piezoelectric layer to the resin layer.

    Acoustic wave device and multiplexer

    公开(公告)号:US11936359B2

    公开(公告)日:2024-03-19

    申请号:US17380068

    申请日:2021-07-20

    发明人: Akira Michigami

    摘要: An acoustic wave device includes a substrate, an interdigital transducer electrode including electrode fingers on a main surface of the substrate, and a protection film covering the main surface of the substrate, and side surfaces and upper surfaces of the electrode fingers. The protection film includes a portion covering the main surface of the substrate, an intermediate portion between two of the electrode fingers adjacent to each other, and a vicinity portion of the electrode fingers. The intermediate portion is thicker than the vicinity portion.

    Acoustic wave filter device
    9.
    发明授权

    公开(公告)号:US11876506B2

    公开(公告)日:2024-01-16

    申请号:US17091193

    申请日:2020-11-06

    发明人: Akira Michigami

    摘要: An acoustic wave filter includes a series-arm resonator, a first parallel-arm resonator, and a second parallel-arm resonator. The series-arm resonator is disposed on a path connecting first and second input/output terminals. The first parallel-arm resonator is disposed on a path that connects ground with a node, which is located on a path connecting the series-arm resonator with the first input/output terminal. The second parallel-arm resonator is disposed on a path that connects ground with a node, which is located on a path connecting the series-arm resonator with the second input/output terminal. The parallel-arm resonator has a resonant frequency lower than the resonant frequency of the second parallel-arm resonator. The first parallel-arm resonator has an anti-resonant frequency higher than the anti-resonant frequency of the second parallel-arm resonator. The second parallel-arm resonator has the highest resonant frequency of all the parallel-arm resonators.