METAL LAYER BETWEEN ELECTRODES AND PIEZOELECTRIC LAYER FOR CONTROLLING COUPLING

    公开(公告)号:US20250038734A1

    公开(公告)日:2025-01-30

    申请号:US18775010

    申请日:2024-07-17

    Inventor: John P. KOULAKIS

    Abstract: An acoustic resonator device is provided that a piezoelectric layer; an interdigital transducer on a surface of the piezoelectric layer and including interleaved IDT fingers extending from first and second busbars respectively; and a metal layer disposed between a finger of the interleaved IDT fingers and the piezoelectric layer in a thickness direction that is measured in a direction normal to the surface of the piezoelectric layer. In this aspect, a ratio of a width of the metal layer to a pitch of the interleaved IDT fingers is greater than or equal to 0.45, the width of the metal layer being measured in a width direction that is parallel to the surface of the piezoelectric layer. Moreover, a thickness of the metal layer in the thickness direction is less than one third a thickness of the finger in the thickness direction.

    ACOUSTIC RESONATOR AND FILTER DEVICE WITH BALANCED CHIRPING

    公开(公告)号:US20240022227A1

    公开(公告)日:2024-01-18

    申请号:US18353979

    申请日:2023-07-18

    CPC classification number: H03H9/02228 H03H9/02015 H03H3/013 H03H9/02086

    Abstract: An acoustic resonator is provided that includes a substrate; a piezoelectric layer supported by the substrate; and an interdigital transducer (IDT) at a surface of the piezoelectric layer. The IDT includes a pair of busbars and a plurality of electrode fingers extending from the first and second busbars to be interleaved with each other. The respective widths of at least a portion of the electrode fingers increases in a direction from respective first ends of the first and second busbars to the respective second end of the first and second busbars. Moreover, a pitch of the portion of the electrode fingers decreases in the direction from the respective first ends of the first and second busbar to the respective second ends of the first and second busbars.

    ACOUSTIC RESONATOR FILTER WITH HIGH THERMAL CONDUCTIVITY

    公开(公告)号:US20250030399A1

    公开(公告)日:2025-01-23

    申请号:US18773084

    申请日:2024-07-15

    Abstract: A device may include a substrate that includes a base and an intermediate layer. A device may include a piezoelectric layer supported by the substrate except for a portion of the piezoelectric layer forming a diaphragm that spans a helium filled cavity that extends at least partially in the intermediate layer. A device may include an interdigital transducer (IDT) at a surface of the piezoelectric layer and having interleaved fingers on the diaphragm that have a thickness that is less than 0.5 times a thickness of the diaphragm and greater than 0.2 times the thickness of the diaphragm, wherein one of the base and the intermediate layer of the substrate defines a bottom surface of the helium filled cavity that faces the diaphragm such that a cavity depth is between 1.0 μm to 6.0 μm.

    TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH OXIDE STRIP AND DUMMY FINGERS

    公开(公告)号:US20230336142A1

    公开(公告)日:2023-10-19

    申请号:US18193269

    申请日:2023-03-30

    Inventor: John P. KOULAKIS

    CPC classification number: H03H9/02228 H03H9/174 H03H9/564

    Abstract: An acoustic resonator includes a substrate, a piezoelectric plate supported by the substrate, and a diaphragm. The resonator further includes an interdigital transducer (IDT) having interleaved IDT fingers extending from first and second busbars respectively. Overlapping portions of the interleaved IDT fingers define an aperture of the acoustic resonator. The resonator further includes one or more dielectric strips, each of the one or more dielectric strips overlapping at least a portion of the IDT fingers and extending into a gap between a margin of the aperture and a corresponding one of the first busbar or the second busbar. The resonator further includes one or more dummy fingers, each of the dummy fingers extending from one of the first busbar or the second busbar at a position between neighboring IDT fingers and extending into the gap toward one of the one or more dielectric strips.

Patent Agency Ranking